The 4D World Map System with Semantic Spatiotemporal Analyzers

S. Sasaki,Yusuke Takahashi,Y. Kiyoki

DOI: https://doi.org/10.3233/978-1-60750-477-1-1

Abstract:

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Current-driven Domain Wall Dynamics And Its Electric Signature In Ferromagnetic Nanowires

Yang Liu

2012-01-01

Abstract:Current-driven Domain Wall Dynamics And Its Electric Signature In Ferromagnetic Nanowires. (August 2011 ) Yang Liu, B.S, Beihang University Co-Chairs of Advisory Committee: Dr. Jairo Sinova Dr. Artem Abanov We study current-induced domain wall dynamics in a thin ferromagnetic nanowire. We derive the effective equations of domain wall motion, which depend on the wire geometry and material parameters. We describe the procedure to determine these parameters by all-electric measurements of the time-dependent voltage induced by the domain wall motion. We provide an analytical expression for the time variation of this voltage. Furthermore, we show that the measurement of the proposed effects is within reach with current experimental techniques. We also show that a certain resonant time-dependent current moving a domain wall can significantly reduce the Joule heating in the wire, and thus it can lead to a novel proposal for the most energy efficient memory devices. We discuss how Gilbert damping, non-adiabatic spin transfer torque, and the presence of Dzyaloshinskii-Moriya interaction can effect this power optimization. Furthermore, we propose a new nanodot magnetic device. We derive a specific time-dependent current that is needed to switch the magnetization of the nanodot the most efficiently.
Perspectives of Racetrack Memory Based on Current-Induced Domain Wall Motion: from Device to System.

Yue Zhang,Chao Zhang,Jacques-Olivier Klein,Dafine Ravelosona,Guangyu Sun,Weisheng Zhao

DOI: https://doi.org/10.1109/iscas.2015.7168650

2015-01-01

Abstract:Current-induced domain wall motion (CIDWM) is regarded as a promising way towards achieving emerging high-density, high-speed and low-power non-volatile devices. Racetrack memory is an attractive concept based on this phenomenon, which can store and transfer a series of data along a magnetic nanowire. Although the first prototype has been successfully fabricated, its advancement is relatively arduous caused by certain technique and material limitations. Particularly, the storage capacity issue is one of the most serious bottlenecks hindering its application for practical systems. In this paper, we present two alternative solutions to improve the capacity of racetrack memory: magnetic field assistance and chiral domain wall (DW) motion. The former one can lower the current density for DW shifting; the latter one can utilize materials with low resistivity. Both of them are able to increase the nanowire length and allow higher feasibility of large-capacity racetrack memory. Furthermore, system level simulation shows that a racetrack memory based cache can improve system performance by about 15.8% and significantly reduces the energy consumption, compared to the SRAM counterpart.
Multicore memristor from electrically readable nanoscopic racetracks

Jae-Chun Jeon,Andrea Migliorini,Jiho Yoon,Jaewoo Jeong,Stuart S. P. Parkin

DOI: https://doi.org/10.1126/science.adh3419

IF: 56.9

2024-10-19

Science

Abstract:The manipulation and detection of mobile domain walls in nanoscopic magnetic wires underlies the development of multibit memories. The studies of such domain walls have focused on macroscopic wires that allow for optical detection by using magneto-optic effects. In this study, we demonstrated the electrical tracking with a spatial resolution of better than 40 nm of multiple mobile domain walls in nanoscopic racetracks, using a set of anomalous Hall detectors integrated into the racetracks. Electrical time-series signals from the Hall detectors allow for the static and dynamic phase space visualization of the dynamics of a domain wall or multiple domain walls that can be described by a multicore memristor model. The domain wall dynamics and stochasticity can be controlled in racetracks even to deep submicron dimensions.

multidisciplinary sciences
Domain-stored skyrmion structures for a reading error-detectable racetrack memory

Tatsuro Karino,Daigo Shimizu,Ayaka P. Ohki,Nobuyuki Ikarashi,Takeshi Kato,Daiki Oshima,Masahiro Nagao

2024-07-11

Abstract:Magnetic racetrack memory (RTM) uses a series of either domains or skyrmions as data bits along nanowires. However, it lacks reading error detection capability in nanowires, which requires high electric current density for the deterministic motion of domain walls (DWs) or skyrmions. Here, we propose a method of a reading error-detectable RTM and explore domain-stored skyrmion structures for this RTM. This method uses domains as memory cells and assigns the presence and absence of a skyrmion in a domain to different bits, enabling the electrical signal of any memory cells to output the opposite sign to that of the adjacent memory cells. Using simulations and Lorentz microscopy, we demonstrate that perpendicularly magnetized nanowires with relatively large Dzyaloshinskii-Moriya interaction can achieve domain-stored skyrmion structures. Additionally, our simulations show that when DWs approach to skyrmions during spin-orbit torque-induced motion, angular momentum transfers from DWs to skyrmions, resulting in fast motion of skyrmions.

Applied Physics,Mesoscale and Nanoscale Physics
Evaluation of multi-bit domain wall motion by low current density to obtain ultrafast data rate in a compensated ferrimagnetic wire

S. Ranjbar,S. Sumi,K. Tanabe,H. Awano

DOI: https://doi.org/10.1063/5.0086380

IF: 6.6351

2022-09-10

APL Materials

Abstract:Architectures based on multi-bit magnetic domain walls (DWs) take advantage of the fast speed, high density, nonvolatility, and flexible design of DWs to process and store data bits. However, controlling multi-bit DWs driven by electric current at an ideal position remains a significant challenge for developing integrated spintronic applications with high reliability and low power consumption. We exhibit the possibility of driving fast and stable multi-bit DWs at low current density without an in-plane external magnetic field in Fe-rich GdFeCo magnetic wires. When an in-plane magnetic field is applied in the wire direction, the front edge accelerates, although the rear edge decelerates, and the recorded data are destroyed. Hence, this method is not practical. Here, the DW speed of the multi-bit DWs is 1500 m/s under a low current density of 29 × 10 10 (A/m 2 ). A straight DW shape is required to accurately read the bits of information by the tunneling magnetoresistance head in real DW memory devices. Moreover, we demonstrate that the DW position is related to the DW shape after injecting a pulse current into the magnetic wire. A straight DW shape is exhibited for 3 ns pulse duration width, while the DW shape became rounded for 30 and 50 ns pulse duration widths. Our finding provides a practical concept for multiple-bit-per-cell memory and presents a viable platform for DW memory applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Error-Free and Current-Driven Synthetic Antiferromagnetic Domain Wall Memory Enabled by Channel Meandering

Pengxiang Zhang,Wilfried Haensch,Charudatta M. Phatak,Supratik Guha

2024-05-28

Abstract:We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the multi-bit capability of a magnetic tunnel junction. The magnetic free layer of the memory device has perpendicular magnetic anisotropy and interfacial Dzyaloshinskii-Moriya interaction, so that spin-orbit torques induce efficient domain wall motion. Using micromagnetic simulations, we find two pinning mechanisms that lead to different cell designs: two-way switching and four-way switching. The memory cell design choices and the physics behind these pinning mechanisms are discussed in detail. Furthermore, we show that switching reliability and speed may be significantly improved by replacing the ferromagnetic free layer with a synthetic antiferromagnetic layer. Switching behavior and material choices will be discussed for the two implementations.

Emerging Technologies,Mesoscale and Nanoscale Physics,Materials Science,Applied Physics
Transforming domain motion for 3D racetrack memory with perpendicular magnetic anisotropy

Syuta Honda,Yoshiaki Sonobe,Simon John Greaves

DOI: https://doi.org/10.1088/1361-6463/abd060

2021-01-21

Abstract:Abstract Domain-wall motion type magnetic memories are expected to be among the next generation of magnetic recording devices and vertical-NAND memories. In particular, three-dimensional race track memory (3D-RM), which extends vertically from a substrate is important for high integration. We propose a vertical 3D-RM loop consisting of two horizontal and two vertical nanowires in which the magnetic anisotropy is perpendicular to the substrate. The horizontal nanowires contain perpendicularly magnetized domains and Néel type domain walls (DWs). The vertical nanowires contain longitudinally magnetized domains with head-to-head or tail-to-tail DWs. DW motion is demonstrated using micromagnetic simulations based on the Landau–Lifshitz–Gilbert equation. We find that a DW can pass around a corner while deforming its own shape. The threshold current density to push a DW around a corner has a maximum value for wire thickness of about 10 nm.
Programmable Racetrack for Magnetic Domain Wall Motion via Local Tuning of Exchange Biased Field

Hyun‐Joong Kim,Kyoung‐Woong Moon,Seongsoo Yoon,Kyongmo An,Changsoo Kim,Seungmo Yang,Tae‐Seong Ju,Jong Wan Son,Jung‐Il Hong,Chanyong Hwang

DOI: https://doi.org/10.1002/aelm.202400027

IF: 6.2

2024-04-05

Advanced Electronic Materials

Abstract:Local heating allows the exchange bias magnetic field to be set differently depending on the location. This can write racetracks in the uniform film along which the magnetic domain walls can move, and new tracks can be created again by reheating local areas. To overcome memory bottleneck issues in memory‐centric chip technologies, in‐memory computing has been considered an alternative route involving simultaneous data storage and computing in a memory network. In the context of spintronics, a memory‐in‐logic device based on spin‐transfer‐torque or spin‐orbit‐torque magnetoresistive random‐access memory, and a magnetic domain wall (DW) racetrack has been studied. To expand the functionalities of a conventional magnetic DW racetrack, the study devises a reprogrammable exchange‐biased DW racetrack with local engineering of the exchange bias field (HE) in continuous magnetic films without requiring a lithography process for specific patterning of the films. Furthermore, current‐driven and field‐driven DW motion along the exchange‐biased racetrack is demonstrated. Additionally, within the route of the locally different exchange‐biased racetrack, a gate function can be performed to guide or stop DW motion by locally tuning HE. The complex maze racetrack is rewritable, and multiple input channels can be controlled.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Ultralow power and shifting-discretized magnetic racetrack memory device driven by chirality switching and spin current

Shen Li,Xiaoyang Lin,Pingzhi Li,Suteng Zhao,Zhizhong Si,Guodong Wei,Bert Koopmans,Reinoud Lavrijsen,Weisheng Zhao

2023-05-08

Abstract:Magnetic racetrack memory has significantly evolved and developed since its first experimental verification and is considered as one of the most promising candidates for future high-density on-chip solid state memory. However, the lack of a fast and precise magnetic domain wall (DW) shifting mechanism and the required extremely high DW motion (DWM) driving current both make the racetrack difficult to commercialize. Here, we propose a method for coherent DWM that is free from above issues, which is driven by chirality switching (CS) and an ultralow spin-orbit-torque (SOT) current. The CS, as the driving force of DWM, is achieved by the sign change of DM interaction which is further induced by a ferroelectric switching voltage. The SOT is used to break the symmetry when the magnetic moment is rotated to the Bloch direction. We numerically investigate the underlying principle and the effect of key parameters on the DWM through micromagnetic simulations. Under the CS mechanism, a fast (102 m/s), ultralow energy (5 attojoule), and precisely discretized DWM can be achieved. Considering that skyrmions with topological protection and smaller size are also promising for future racetrack, we similarly evaluate the feasibility of applying such a CS mechanism to a skyrmion. However, we find that the CS only causes it to "breathe" instead of moving. Our results demonstrate that the CS strategy is suitable for future DW racetrack memory with ultralow power consumption and discretized DWM.

Mesoscale and Nanoscale Physics
Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications

Hanan Mohammed,Hector Corte-León,Yurii P. Ivanov,Sergei Lopatin,Julian A. Moreno,Andrey Chuvilin,Akshaykumar Salimath,Aurelien Manchon,Olga Kazakova,Jurgen Kosel

DOI: https://doi.org/10.48550/arXiv.1804.06616

2018-04-18

Abstract:A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.

Applied Physics,Mesoscale and Nanoscale Physics,Materials Science
Prototype Design of a Domain-Wall-Based Magnetic Memory Using a Single Layer La0.67Sr0.33MnO3 Thin Film.

Shizhe Wu,Yuelin Zhang,Chengfeng Tian,Jianyu Zhang,Mei Wu,Yu Wang,Peng Gao,Haiming Yu,Yong Jiang,Jie Wang,Kangkang Meng,Jinxing Zhang

DOI: https://doi.org/10.1021/acsami.1c04724

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:Magnetic field-free, nonvolatile magnetic memory with low power consumption is highly desired in information technology. In this work, we report a current-controllable alignment of magnetic domain walls in a single layer La0.67Sr0.33MnO3 thin film with the threshold current density of 2 × 105 A/cm2 at room temperature. The vector relationship between current directions and domain-wall orientations indicates the dominant role of spin-orbit torque without an assistance of external magnetic field. Meanwhile, significant planar Hall resistances can be readout in a nonvolatile way before and after the domain-wall reorientation. A domain-wall-based magnetic random-access memory (DW-MRAM) prototype device has been proposed.
Controllable Domain Walls in Two-Dimensional Ferromagnetic Material Fe<sub>3</sub>GeTe<sub>2</sub> Based on the Spin-Transfer Torque Effect

Ke Pei,Shanshan Liu,Liting Yang,Enze Zhang,Ruixuan Zhang,Chendi Yang,Linfeng Ai,Zihan Li,Faxian Xiu,Renchao Che

DOI: https://doi.org/10.1021/acsnano.1c06361

IF: 17.1

2021-01-01

ACS Nano

Abstract:Recently, two-dimensional magnetic material has attracted attention worldwide due to its potential application in magnetic memory devices. The previous concept of domain walls driven by current pulses is a disordered motion. Further investigation of the mechanism is urgently lacking. Here, Fe3GeTe2, a typical high-Curie temperature (T-C) two-dimensional magnetic material, is chosen to explore the magnetic domain dynamics by in situ Lorentz transmission electron microscopy experiments. It has been found that the stripe domain could be driven, compressed, and expanded by the pulses with a critical current density. Revealed by micromagnetic simulations, all the domain walls cannot move synchronously due to the competition between demagnetization energy and spin-transfer torque effect. In consideration of the reflection of high-frequency pulses, the disordered motion could be well explained together. The multiple stable states of the magnetic structure due to the weak exchange interaction in a two-dimensional magnet provides complex dynamic processes. Based on plenty of experiments, a cluster of domain walls could be more steady and move more synchronously under the drive of pulse current. The complication of domain wall motions presents a challenge in race track memory devices and two-dimensional magnetic material will be a better choice for application research.
Performance of synthetic antiferromagnetic racetrack memory: domain wall vs skyrmion

R. Tomasello,V. Puliafito,E. Martinez,A. Manchon,M. Ricci,M. Carpentieri,G. Finocchio

DOI: https://doi.org/10.1088/1361-6463/aa7a98

2016-12-20

Abstract:A storage scheme based on racetrack memory, where the information can be coded in a domain or a skyrmion, seems to be an alternative to conventional hard disk drive for high density storage. Here, we perform a full micromagnetic study of the performance of synthetic antiferromagnetic (SAF) racetrack memory in terms of velocity and sensitivity to defects by using experimental parameters. We find that to stabilize a SAF skyrmion, the Dzyaloshinskii-Moriya Interaction in the top and the bottom ferromagnet should have an opposite sign. The velocity of SAF skyrmion and SAF Neel domain wall are of the same order and can reach values larger than 1200 m/s if a spin-orbit torque from the spin-Hall effect with opposite sign is applied to both ferromagnets.

Materials Science
Nanoscale domain wall devices with magnetic tunnel junction read and write

E. Raymenants,O. Bultynck,D. Wan,T. Devolder,K. Garello,L. Souriau,A. Thiam,D. Tsvetanova,Y. Canvel,D. E. Nikonov,I. A. Young,M. Heyns,B. Soree,I. Asselberghs,I. Radu,S. Couet,V. D. Nguyen

DOI: https://doi.org/10.1038/s41928-021-00593-x

IF: 33.255

2021-06-01

Nature Electronics

Abstract:The manipulation of fast domain wall motion in magnetic nanostructures could form the basis of novel magnetic memory and logic devices. However, current approaches for reading and writing domain walls require external magnetic fields, or are based on conventional magnetic tunnel junctions (MTJs) that are not compatible with high-speed domain wall motion. Here we report domain wall devices based on perpendicular MTJs that offer electrical read and write, and fast domain wall motion via spin–orbit torque. The devices have a hybrid free layer design that consists of platinum/cobalt (Pt/Co) or a synthetic antiferromagnet (Pt/Co/Ru/Co) into the free layer of conventional MTJs. We show that our devices can achieve good tunnelling magnetoresistance readout and efficient spin-transfer torque writing that is comparable to current magnetic random-access memory technology, as well as domain wall depinning efficiency that is similar to stand-alone materials. We also show that a domain wall conduit based on a synthetic antiferromagnet offers the potential for reliable domain wall motion and faster write speed compared with a device based on Pt/Co. Domain wall devices based on perpendicular magnetic tunnel junctions with a hybrid free layer design can offer electrical read and write, and fast domain wall motion driven via spin–orbit torque.

engineering, electrical & electronic
In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Zhongran Liu,Han Wang,Ming Li,Lingling Tao,Tula R. Paudel,Hongyang Yu,Yuxuan Wang,Siyuan Hong,Meng Zhang,Zhaohui Ren,Yanwu Xie,Evgeny Y. Tsymbal,Jingsheng Chen,Ze Zhang,He Tian

DOI: https://doi.org/10.1038/s41586-022-05503-5

IF: 64.8

2023-01-01

Nature

Abstract:Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications(1-3). The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. Here we report a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO3 ferroelectric films a few nanometres thick. By using an in situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism is detected in which ferroelectric domain growth occurs in the direction parallel to an applied electric field. Based on atomically resolved electron energy-loss spectroscopy, in situ charge mapping by in-line electron holography and theoretical calculations, we show that oxygen vacancies accumulating at the charged domain walls are responsible for the domain-wall stability and motion. Voltage control of the in-plane domain-wall position within a BiFeO3 film gives rise to multiple non-volatile resistance states, thus demonstrating the key functional property of being a memristor a few unit cells thick. These results promote a better understanding of ferroelectric switching behaviour and provide a new strategy for creating unit-cell-scale devices.
Exploring Fast Domain Wall Motion and DMI Realization in Compensated Ferrimagnetic Nanowires

Mojtaba Mohammadi,Sina Ranjbar,Pham Van Thach,Satoshi Sumi,Kenji Tanabe,Hiroyuki Awano

DOI: https://doi.org/10.1088/1361-6463/ad9031

2024-11-10

Journal of Physics D Applied Physics

Abstract:Recent advancements in spintronics have spurred interest in current-induced domain wall motion (CIDWM) as a promising avenue for next-generation memory technologies. While previous research has predominantly focused on thin ferromagnetic films, recent attention has shifted towards ferrimagnetic materials due to their potential for magnetization compensation and efficient domain wall (DW) motion. In this study, we investigated the dynamics of DWs in compensated ferrimagnetic Pt/Gd x Fe 1-x nanowires through experimental characterization and analysis. Our results reveal fast DW motion around the magnetic compensation point, indicating the influence of spin-orbit torque induced by current flow. We systematically explore the Dzyaloshinskii-Moriya interaction (DMI) field across different compositions of GdFe, observing elevated DMI field values near the compensation compositions. Additionally, we examine the impact of wire width and pulse duration on DW velocity, demonstrating higher velocities in narrower wires and shorter pulse durations. In the 1 μm wire, a DW velocity of around 3200 m/s was achieved by applying a 3 ns short pulse current. Our findings elucidate the intricate interplay between film composition, magnetic properties, wire width, pulse duration, and DW dynamics, providing valuable insights for the design and optimization of ferrimagnetic materials for future magnetic memory technologies.

physics, applied
Drastic enhancement of stable and fast domain wall motion in GdFe nanowires through laser-annealing treatment at wire edges

Mojtaba Mohammadi,Yamato Miyose,Satoshi Sumi,Kenji Tanabe,Hiroyuki Awano

DOI: https://doi.org/10.1063/9.0000747

IF: 1.697

2024-02-01

AIP Advances

Abstract:One of the key challenges in racetrack memory (RM) technology is achieving stable and high velocities for domain walls (DWs) while maintaining low power consumption. In our study, we propose a novel laser-annealing (LA) process to modify wire edges for a smoother DW movement along the nanowire. In this regard, a film stack of Pt (5 nm)/Gd26Fe74(20 nm)/SiN(10 nm) was deposited by magnetron sputtering. The DW velocity in the wire was measured by applying single voltage pulses and then observing the DW motion using a Kerr microscope. The current-induced domain walls motion measurements have shown that the LA process significantly enhances the velocity of DW motion. The LA of both edges of the nanowire results in a threefold increase in DW velocity compared to non-LA conditions. Further experiments illustrated that the DW velocity remains stable for the laser-annealed condition across a wide range of applied currents, spanning from 3 × 1011 to 7 × 1011 A/m2. Additionally, our investigation into the magnetic characteristics of laser-annealed nanowire regions exhibited a notable reduction of Hc at the laser-annealed edges. This decrease in Hc indicates greater ease in manipulating the material’s magnetization, which is essential for efficient DW motion. Furthermore, we explored the influence of LA on the Dzyaloshinskii–Moriya Interaction (DMI) field. The DMI finding underscores the strong correlation between DMI fields and DW speed. This achievement, i.e. the stability and consistency of the domain’s velocity (as the components of an RM) in a wide range of applied current, is significant progress in the field of operation and industrialization of RM.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Perspectives of Racetrack Memory for Large-Capacity On-Chip Memory: from Device to System

Yue Zhang,Chao Zhang,Jiang Nan,Zhizhong Zhang,Xueying Zhang,Jacques-Olivier Klein,Dafine Ravelosona,Guangyu Sun,Weisheng Zhao

DOI: https://doi.org/10.1109/tcsi.2016.2529240

2016-01-01

Abstract:Current-induced domain wall motion (CIDWM) is regarded as a promising way towards achieving emerging high-density, high-speed and low-power non-volatile devices. Racetrack memory is an attractive spintronic memory based on this phenomenon, which can store and transfer a series of data along a magnetic nanowire. However, storage capacity issue is always one of the most serious bottlenecks hindering its application for practical systems. This paper focuses on the potential of racetrack memory towards large capacity. The investigations covering from device level to system level have been carried out. Various alternative mechanisms to improve the capacity of racetrack memory have been proposed and elucidated, e.g., magnetic field assistance, chiral DW motion and voltage-controlled flexible DW pinning. All of them can increase nanowire length, allowing enhanced feasibility of large-capacity racetrack memory. By using SPICE-compatible racetrack memory electrical model and commercial CMOS 28 nm design kit, mixed simulations are performed to validate their functionalities and analyze their performance. System-level evaluations demonstrate the impact of capacity improvement on overall system. Compared with traditional SRAM based cache, racetrack memory based cache shows its advantages in terms of execution time and energy consumption.
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Chao Zhang,Guangyu Sun,Xian Zhang,Weiqi Zhang,Weisheng Zhao,Tao Wang,Yun Liang,Yongpan Liu,Yu Wang,Jiwu Shu

DOI: https://doi.org/10.1145/2749469.2750388

2015-01-01

ACM SIGARCH Computer Architecture News

Abstract:Racetrack memory is an emerging non-volatile memory based on spintronic domain wall technology. It can achieve ultra-high storage density. Also, its read/write speed is comparable to that of SRAM. Due to the tape-like structure of its storage cell, a "shift" operation is introduced to access racetrack memory. Thus, prior research mainly focused on minimizing shift latency/energy of racetrack memory while leveraging its ultra-high storage density. Yet the reliability issue of a shift operation, however, is not well addressed. In fact, racetrack memory suffers from unsuccessful shift due to domain misalignment. Such a problem is called " position error " in this work. It can significantly reduce mean-time-to-failure (MTTF) of racetrack memory to an intolerable level. Even worse, conventional error correction codes (ECCs), which are designed for "bit errors", cannot protect racetrack memory from the position errors. In this work, we investigate the position error model of a shift operation and categorize position errors into two types: "stop-in-middle" error and "out-of-step" error. To eliminate the stop-in-middle error, we propose a technique called sub-threshold shift (STS) to perform a more reliable shift in two stages. To detect and recover the out-of-step error, a protection mechanism called position error correction code (p-ECC) is proposed. We first describe how to design a p-ECC for different protection strength and analyze corresponding design overhead. Then, we further propose how to reduce area cost of p-ECC by leveraging the "overhead region" in a racetrack memory stripe. With these protection mechanisms, we introduce a position-error-aware shift architecture. Experimental results demonstrate that, after using our techniques, the overall MTTF of racetrack memory is improved from 1.33 μs to more than 69 years, with only 0:2% performance degradation. Trade-off among reliability, area, performance, and energy is also explored with comprehensive discussion.
Enhanced spin transfer torque effect for transverse domain walls in cylindrical nanowires

Matteo Franchin,Andreas Knittel,Maximilian Albert,Dmitri S. Chernyshenko,Thomas Fischbacher,Anil Prabhakar,Hans Fangohr

DOI: https://doi.org/10.1103/physrevb.84.094409

IF: 3.7

2011-09-13

Physical Review B

Abstract:Recent studies have predicted extraordinary properties for transverse domain walls in cylindrical nanowires: zero depinning current, the absence of the Walker breakdown, and applications as domain wall oscillators. In order to reliably control the domain wall motion, it is important to understand how they interact with pinning centers, which may be engineered, for example, through modulations in the nanowire geometry (such as notches or extrusions) or in the magnetic properties of the material. In this paper we study the motion and depinning of transverse domain walls through pinning centers in ferromagnetic cylindrical nanowires. We use (i) magnetic fields and (ii) spin-polarized currents to drive the domain walls along the wire. The pinning centers are modelled as a section of the nanowire which exhibits a uniaxial crystal anisotropy where the anisotropy easy axis and the wire axis enclose a variable angle θP. Using (i) magnetic fields, we find that the minimum and the maximum fields required to push the domain wall through the pinning center differ by 30%. On the contrary, using (ii) spin-polarized currents, we find variations of a factor 130 between the minimum value of the depinning current density (observed for θP=0∘, i.e., anisotropy axis pointing parallel to the wire axis) and the maximum value (for θP=90∘, i.e., anisotropy axis perpendicular to the wire axis). We study the depinning current density as a function of the height of the energy barrier of the pinning center using numerical and analytical methods. We find that for an industry standard energy barrier of 40kBT, a depinning current of about 5μA (corresponding to a current density of 6×1010A/m2 in a nanowire of 10nm diameter) is sufficient to depin the domain wall. We reveal and explain the mechanism that leads to these unusually low depinning currents. One requirement for this depinning mechanism is for the domain wall to be able to rotate around its own axis. With the right barrier design, the spin torque transfer term is acting exactly against the damping in the micromagnetic system, and thus the low current density is sufficient to accumulate enough energy quickly. These key insights may be crucial in furthering the development of novel memory technologies, such as the racetrack memory, that can be controlled through low current densities.

physics, condensed matter, applied,materials science, multidisciplinary

The 4D World Map System with Semantic Spatiotemporal Analyzers

Current-driven Domain Wall Dynamics And Its Electric Signature In Ferromagnetic Nanowires

Perspectives of Racetrack Memory Based on Current-Induced Domain Wall Motion: from Device to System.

Multicore memristor from electrically readable nanoscopic racetracks

Domain-stored skyrmion structures for a reading error-detectable racetrack memory

Evaluation of multi-bit domain wall motion by low current density to obtain ultrafast data rate in a compensated ferrimagnetic wire

Error-Free and Current-Driven Synthetic Antiferromagnetic Domain Wall Memory Enabled by Channel Meandering

Transforming domain motion for 3D racetrack memory with perpendicular magnetic anisotropy

Programmable Racetrack for Magnetic Domain Wall Motion via Local Tuning of Exchange Biased Field

Ultralow power and shifting-discretized magnetic racetrack memory device driven by chirality switching and spin current

Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications

Prototype Design of a Domain-Wall-Based Magnetic Memory Using a Single Layer La0.67Sr0.33MnO3 Thin Film.

Controllable Domain Walls in Two-Dimensional Ferromagnetic Material Fe<sub>3</sub>GeTe<sub>2</sub> Based on the Spin-Transfer Torque Effect

Performance of synthetic antiferromagnetic racetrack memory: domain wall vs skyrmion

Nanoscale domain wall devices with magnetic tunnel junction read and write

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Exploring Fast Domain Wall Motion and DMI Realization in Compensated Ferrimagnetic Nanowires

Drastic enhancement of stable and fast domain wall motion in GdFe nanowires through laser-annealing treatment at wire edges

Perspectives of Racetrack Memory for Large-Capacity On-Chip Memory: from Device to System

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Enhanced spin transfer torque effect for transverse domain walls in cylindrical nanowires