Abstract:Racetrack memory (RM), a new storage scheme in which information flows along a nanotrack, has been considered as a potential candidate for future high-density storage device instead of hard disk drive (HDD). The first RM technology, which was proposed in 2008 by IBM, relies on a train of opposite magnetic domains separated by domain walls (DWs), named DW-RM. After 10 years of intensive research, a variety of fundamental advancements has been achieved; unfortunately, no product has been available until now. With increasing effort and resources dedicated to the development of DW-RM, it is likely that new materials and mechanisms will soon be discovered for practical applications. However, new concepts might also be on the horizon. Recently, an alternative information carrier, magnetic skyrmion, which was experimentally discovered in 2009, has been regarded as a promising replacement of DW for RM, named skyrmion-based RM (SK-RM). Intensive effort has been involved and amazing advances have been made in observing, writing, manipulating, and deleting individual skyrmions. So, what is the relationship between DW and skyrmion? What are the key differences between DW and skyrmion, or between DW-RM and SK-RM? What benefits could SK-RM bring and what challenges need to be addressed before application? In this review article, we intend to answer these questions through a comparative cross-layer study between DW-RM and SK-RM. This work will provide guidelines, especially for circuit and architecture researchers on RM.

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