Abstract:Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications(1-3). The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. Here we report a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO3 ferroelectric films a few nanometres thick. By using an in situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism is detected in which ferroelectric domain growth occurs in the direction parallel to an applied electric field. Based on atomically resolved electron energy-loss spectroscopy, in situ charge mapping by in-line electron holography and theoretical calculations, we show that oxygen vacancies accumulating at the charged domain walls are responsible for the domain-wall stability and motion. Voltage control of the in-plane domain-wall position within a BiFeO3 film gives rise to multiple non-volatile resistance states, thus demonstrating the key functional property of being a memristor a few unit cells thick. These results promote a better understanding of ferroelectric switching behaviour and provide a new strategy for creating unit-cell-scale devices.

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Error-Free and Current-Driven Synthetic Antiferromagnetic Domain Wall Memory Enabled by Channel Meandering

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Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications

Prototype Design of a Domain-Wall-Based Magnetic Memory Using a Single Layer La0.67Sr0.33MnO3 Thin Film.

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture

Flat bands and multi-state memory devices from chiral domain wall superlattices in magnetic Weyl semimetals

Multicore memristor from electrically readable nanoscopic racetracks

Programmable Racetrack for Magnetic Domain Wall Motion via Local Tuning of Exchange Biased Field

The 4D World Map System with Semantic Spatiotemporal Analyzers

Chiral Domain Wall Injector Driven by Spin-orbit Torques

Performance of synthetic antiferromagnetic racetrack memory: domain wall vs skyrmion

Efficient domain wall motion driven by the out-of-plane spin polarization

Domain-stored skyrmion structures for a reading error-detectable racetrack memory

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.