Abstract:The SiC/SiO2 interface in the termination area is a crucial component in limiting high-temperature reverse-bias (HTRB) reliability for SiC-based high-voltage devices. However, the atomic structure and carrier-trapping behavior of the SiC/SiO2 interface defects therein and the underlying physical mechanisms of breakdown-voltage (VBD) variation are still largely unclear. Here, the SiC/SiO2 interface defects of 4H-SiC gate turn-off (GTO) thyristors before and after HTRB stress are investigated by transient capacitance measurements and density-functional-theory (DFT) calculations. It is found that the bias stress at 4.4 kV enlarges the interface state density at EC−0.60 eV to EC−1.33 eV by electron capturing. As a result, the negative interface charge is generated. As high-resolution transmission electron microscopy reveals the presence of excess carbon near the SiC surface, DFT calculations are focused on carbon-related interface defects to clarify the atomic and electronic structures of the SiC/SiO2 interface trap and assign them to negatively charged excess split-interstitial carbon at the interface. Furthermore, technical computer-aided-design simulation further proves that the negatively charged SiC/SiO2 interface defect is the main cause for the observed VBD degradation after the HTRB test, which leads to a strong electric field crowding effect. These results not only provide deep physical insights underlying VBD degradation in HTRB-stressed high-voltage devices, but are also of significant importance in the optimizations of device structure and oxidation technology for SiC/SiO2 interfaces in high-voltage SiC devices.

Influence of curvature induced stress on first principle calculation and the reliability of 4H-SiC (0001) thermally grown SiO2 gate oxide

Influence on Curvature Induced Stress to the Flatband Voltage and Interface Density of 4H-Sic MOS Structure

The Effects of Stress on Interfacial Properties and Flatband Voltage Instability of 4H-Sic MOS Structures

First principles calculation of strain effects on the density of interface states in 4H-SiC

Design and Simulation on Improving the Reliability of Gate Oxide in SiC CDMOSFET

Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress

Gate Oxide Failure Mechanisms of SiC MOSFET Related to Electro-Thermomechanical Stress under HTRB and HTGB Test

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Improving the reliability of MOS capacitor on 4H-SiC (0001) with phosphorus diffused polysilicon gate

Origin of the Warpage of 3C-Sic Wafer: Effect of Nonuniform Intrinsic Stress

Analysis of Stress Effect on (110)-Oriented Single-Gate SOI nMOSFETs Using a Silicon-Thickness-Dependent Deformation Potential

Effect of High Temperature Oxidation on the Gate Oxide Reliability of SiC MOS Devices

Gate Oxide Reliability and VTH Stability of Planar SiC MOS Technology

Influence of Phosphorus Diffusion on the SiO2/4H-SiC (0001) Interface During Poly Gate Formation Process

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

Origins and characterization techniques of stress in SiC crystals: A review

Mechanical Tensile Strain Induced Gate and Substrate Currents Change in N and P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

Atomistic Mechanism of 4 H - Si C / Si O 2 Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices

Gate Oxide Long-Term Reliability of 4H-Sic Mos Devices