A Silicon-Based Quantum Dot Random Laser

Zhiyang Xu,Hao Zhang,Chao Chen,Gohar Aziz,Jie Zhang,Xiaoxia Zhang,Jinxiang Deng,Tianrui Zhai,Xinping Zhang
DOI: https://doi.org/10.1039/c9ra04650j
IF: 4.036
2019-01-01
RSC Advances
Abstract:Herein, a quantum dot random laser was achieved using a silicon nanowire array. The silicon nanowire array was grown by a metal-assisted chemical etching method. A colloidal quantum dot solution was spin-coated on silicon nanowires to form the random laser. The performance of the random laser was controlled by the resistivity of silicon wafers and the length of silicon nanowires. A transition from incoherent random lasing to coherent random lasing was obtained by increasing the resistivity of the silicon wafers. The random lasing threshold increased with an increase in the length of the silicon nanowires. These results may be useful to explore high-performance silicon-based random lasers.
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