Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

An All-Silicon Laser by Coupling Between Electronic Localized States and Defect States of Photonic Crystal

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

Annular Photonic Crystal Defect Mode For Operation Of Single-Mode Laser

Tunable Quantum Dot Lasers Grown Directly on Silicon

Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer

An silicon nanocrystal laser

Emission cells with quantum dots on silicon chip prepared by using fs pulsed laser

Hybrid Structure Laser Based on Semiconductor Nanowires and a Silica Microfiber Knot Cavity

Transfer-printed quantum-dot nanolasers on a silicon photonic circuit

On-Chip Integrated Quantum-Dot Silicon-Nitride Microdisk Lasers

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Localized State-Induced Enhanced Intrinsic Phonon-Free Optical Transition in Silicon Nanocrystals

Surface Plasmonic Lasing in Micro-Nanostructures of Silicon Excited by Using Pulsed Infrared Lasers

Quantum Size-Dependent Luminescence and Nonlinear Optical Properties of Silicon Quantum Dots/sio2 Multilayer

Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization

Turnkey locking of quantum-dot lasers directly grown on Si

Deterministic Laser Writing of Spin Defects in Nanophotonic Cavities

Simultaneous synthesis and integration of nanoscale silicon by three-photon laser direct writing

Two-dimensional heterostructure quasi-BIC photonic crystal surface-emitting laser with low divergence

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers