Abstract:The Solid-State Power Controller (SSPC) is an intelligent switch composed of power switches, voltage-current sensors, and a microcontroller. It integrates functions such as overvoltage protection, overcurrent protection, status reporting, and remote control. It is employed in industries with high reliability demands to perform on-off control of electrical loads. Due to the high voltage withstand capability, low on-resistance, and superior temperature tolerance of SiC MOSFETs, they are preferred as power switches in solid-state power controller to enhance their reliability. However, individual SiC MOSFETs have limited current-carrying capacity, necessitating the use of multiple devices in parallel to increase their current-carrying capability. Nevertheless, due to the inherent parameter variations among devices, straightforward parallel connection of silicon carbide devices fails to achieve automatic current sharing over the entire temperature range. Consequently, prolonged operation leads to thermal imbalances, severely impacting the reliable operation of the devices. Indeed, achieving current sharing in parallel SiC MOSFETs is crucial for ensuring the safe operation of the system. In light of this, a gate voltage adjustable active current sharing method for SiC MOSFETs has been proposed. This method takes advantage of the temperature-dependent on-resistance characteristic of SiC MOSFETs and introduces a novel SiC MOSFET driver circuit. By independently adjusting the gate voltage of each SiC MOSFET within the parallel configuration, the proposed method achieves effective current sharing control. By employing the Linear Active Disturbance Rejection Control (LADRC) algorithm, control precision and response speed are enhanced, allowing for precise adjustment of the gate voltage. Consequently, this approach significantly improves the balancing and reliability of the parallel operation of SiC MOSFETs. Through simulation and experimentation, the effectiveness and feasibility of the proposed method have been validated successfully.

Current Sharing Behavior of Parallel Connected Silicon Carbide MOSFETs Influenced by Parasitic Inductance

Analysis on Static Current Sharing of N-Paralleled Silicon Carbide MOSFETs

Dynamic Current Balancing for Paralleled SiC MOSFETs with Circuit Mismatches Considering Circulating C Urrent in Drive Circuit

Design of Low Parasitic Inductance SiC MOSFETs Halfbridge Power Modules

Comprehensive Analysis of Paralleled SiC MOSFETs Current Imbalance under Asynchronous Gate Signals

Parallel Connection of Silicon Carbide MOSFETs Challenges, Mechanism, and Solutions

Analysis of Current Imbalance in Paralleled Silicon Carbide Power MOSFETs

Imbalance Current Analysis and Its Suppression Methodology for Parallel SiC MOSFETs with Aid of a Differential Mode Choke.

Turn-on Gate Resistor Optimization for Paralleled SiC MOSFETs

Die Current Balancing of a Press-Pack SiC MOSFET

Effect of Asymmetric Layout and Unequal Junction Temperature on Current Sharing of Paralleled SiC MOSFETs with Kelvin-Source Connection

Symmetric Circuit Layout with Decoupled Modular Switching Cells for Multiparalleled SiC Mosfets

A Paralleled SiC MOSFET Half-bridge Unit with Distributed Arrangement of DC Capacitors

Comparative Investigation on Paralleling Suitability for SiC MOSFETs and SiC/Si Cascode Devices

Research on Current Sharing Method for SiC MOSFETs in Parallel Based on Adjustable Gate Voltage Driver

Modelling and Failure Analysis of SiC MOSFET under the Effects of Parasitic Parameters

A Temperature-Dependent Analytical Model of SiC MOSFET Short-Circuit Behavior Considering Parasitic Parameters

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

Accurate Modeling of the Effective Parasitic Parameters for the Laminated Busbar Connected with Paralleled SiC MOSFETs

An Active Gate Driver for Dynamic Current Sharing of Paralleled SiC MOSFETs

Research on Parallel Current Sharing Scheme of 1200V/100A SiC MOSFET