Electronic Properties of Two-Dimensional IV–V Group Materials from Density Functional Theory

Zhimi Li,Yuanpeng Yao,Tianyu Wang,Kun Lu,Ping Zhang,Wei Zhang,Jiuren Yin
DOI: https://doi.org/10.1016/j.apsusc.2019.143730
IF: 6.7
2019-01-01
Applied Surface Science
Abstract:Based on density functional theory, we have predicted a group of two-dimensional (2D) materials which contain IV and V elements with 3:1 stoichiometry, including C3N, C3P, C3As, Si3N, Si3P, Si3As, Ge3N, Ge3P and Ge3As. The structural, electronic, and optical properties of these compounds are theoretically discussed. Results suggest group IV-V monolayers have graphene-like structures with high kinetic and thermal stability. All the compounds exhibit semiconductor properties with band gaps ranging from 0.332 eV to 2.007 eV. The narrow band gaps indicate IV-V monolayers show excellent optical adsorption in visible light range. In addition, IV-V monolayers shows great anisotropy in electronic properties such as band structure and the electrons/hole effective mass.
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