Abstract:The large area and high power consumption are the two main bottlenecks in the conventional SRAM-based Field Programmable Gate Arrays (FPGAs). In recent works, resistive Non-Volatile Memories (NVMs) have been widely proposed to tackle the above issues in the reconfigurable computing systems, due to their non-volatility, fast read/write speed and high-density. The magnetic Domain-Wall (DW) Racetrack Memory (RM) is the emerging NVM with the great prospect of the development of the low-power and high-density circuits and systems. This paper presents RM based single-context and multi-context hybrid Look-Up Tables (LUTs). The hybrid structure allows the LUT to support both volatile input (low-power and high-speed input) and non-volatile input. The non-volatile input is used to reduce the leakage power and also to provide additional reusable resources to increase the hardware utilization. Compared to the SRAM-based 6-input LUT, the proposed non-volatile LUT reduces the number of transistors and leakage power by 80.2% and 842%, respectively. The proposed design also reduces the leakage power of the conventional 6-input non-volatile LUT by 17.4% with 27.3% fewer transistors and 36% faster operation speed. The Verilog-to-Routing (VTR) simulation results show that the proposed 6-input LUT consumes 27.1% less power than the SRAM-based counterpart. It may also provide 15.2% additional reusable resource. The context of the proposed multi-context LUT can be switched in 4 ns with the context switching energy of 397.24 fJ/LUT. (C) 2018 Elsevier Inc. All rights reserved.

Design of the RRAM-Based Polymorphic Look-Up Table Scheme

An Area-Efficient and Robust Memristive LUT Based on the Enhanced Scouting Logic Cells

Racetrack Memory Based Hybrid Look-Up Table (LUT) for Low Power Reconfigurable Computing.

The Resistance Analysis Attack and Security Enhancement of the IMC LUT Based on the Complementary Resistive Switch Cells

Low-Power Variation-Tolerant Nonvolatile Lookup Table Design.

Design of High-Speed Logic Circuits with Four-Step RRAM-Based Logic Gates.

Memorable Logic Gate Based on Field Effect Oxide Resistive Switching Devices

Circuit Modeling for RRAM-Based Neuromorphic Chip Crossbar Array with and Without Write-Verify Scheme.

Parallel Stateful Logic in RRAM: Theoretical Analysis and Arithmetic Design

Stateful Logic Operations in One-Transistor-One- Resistor Resistive Random Access Memory Array

The Synthesis Method of Logic Circuits Based on the Imemcomp Gates

Reconfigurable Logic Operation Scheme Based on Gate-Tunable CBRAM

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors

RRAM Mirrored and RRAM-Transistor Hybrid Single Device Logic Gates Based on Two-Dimensional Materials

Design and Implementation of SRAM for LUT and CLB Using Clocking Mechanism in Quantum-Dot Cellular Automata

Experimental Validation of Memristor-Aided Logic Using 1T1R TaOx RRAM Crossbar Array

Self-Terminating Write of Multi-Level Cell ReRAM for Efficient Neuromorphic Computing

Complete Reconfigurable Boolean Logic Gates Based on One FeFET -One RRAM Technology

Nonvolatile reconfigurable sequential logic in a HfO 2 resistive random access memory array.

Hybrid CMOS/Memristor Circuit Design Methodology