Abstract:As the dominated composition of Si3N4 ceramics,α-silicon nitride(α-Si3N4)can satisfy the strength and fracture toughness demand in the applications.However,α-Si3N4 is oxygen-sensitive at high tempera-tures,which limits its high-temperature performance.To improve the oxidation resistance of α-Si3N4 ce-ramics,it is necessary to shed light on the oxidation mechanism.Herein,the initial oxidation of α-Si3N4 was systematically studied at the atomic and molecular levels.The density functional theory(DFT)calcu-lation denotes that the(001)surface of α-Si3N4 has the best stability at both room temperature and high temperature.Besides,the oxidation process of the α-Si3N4(001)surface consists of O adsorption and N desorption,and the consequent formation of nitrogen-vacancy(VN)is the key step for further oxidation.Moreover,the molecular dynamics(MD)simulation indicates that the oxidation rate of α-Si3N4(100)surface is slower than that of α-Si3N4(001)surface due to the lower N concentration at the outermost layer.Therefore,the oxidation resistance of α-Si3N4 can be improved by regulating the(100)surface as the dominant exposure surface.In addition,reducing the concentration of N on the final exposed sur-face of α-Si3N4 by mean of constructing the homojunction of the Si-terminal(100)surface and other N-containing surfaces(such as(001)surface)should be also a feasible approach.

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