Evaluation and Lifetime Study of a Cryogenic SAR ADC for HPGe Detectors in Low-Background Physics Experiments

F. Liu,T. Xue,Z. Deng,Y. Liu

DOI: https://doi.org/10.1088/1748-0221/14/07/t07005

2019-01-01

Journal of Instrumentation

Abstract:Cryogenic ADCs can be a promising solution for ton-scale HPGe detectors for dark matter and neutrino-less double beta decay experiments for improved signal integrity and decreased cables and penetrations. This paper presents the characterization and lifetime study of a SAR ADC at liquid nitrogen temperature for CDEX and future LEGEND experiments. The chip is implemented in standard 65 nm CMOS process. It works well at liquid nitrogen temperature with proper biasing. The power consumptions of the SAR ADC are measured to be 6.1 mW and 6.5 mW at 300 K and 77 K respectively. The ENOB of the ADC is decreased from 8.94 bits at 300 K to 8.72 bits at 77 K at 100 MS/s sampling rate. For reasons of efficiency and economics, the lifetime of the cryogenic operation circuits must be in excess tens of years. Hot carrier effect (HCE) is the dominate mechanism that substantially affects the device lifetime at cryogenic temperature and the accelerated lifetime study has also been conducted. The predicted lifetime is similar to 5.7 x 10(4) years at 1.24 V operation at 77 K, which means the ADC is cryogenic qualified to remain outside of the HCE degradation.