Abstract:Unlike conventional methods that typically prioritize valley degeneracy at the expense of carrier mobility, this study theoretically demonstrates an unconventional band convergence strategy to enhance both valley degeneracy and carrier mobility in SnTe under pressure. Furthermore, ultrahigh ZT values of 2.12 at 650 K and 2.55 at 850 K are theoretically predicted for p‐ and n‐type SnTe under 5 GPa. Band convergence is considered a net benefit to thermoelectric performance as it decouples the density of states effective mass (md∗ ) and carrier mobility (μ) by increasing valley degeneracy. Unlike conventional methods that typically prioritize md∗ at the expense of μ, this study theoretically demonstrates an unconventional band convergence strategy to enhance both md∗ and μ in SnTe under pressure. Density functional theory calculations reveal that increasing pressure from 0 to 5 GPa moves the Σ‐band of SnTe upward, reducing the energy offset between L‐ and Σ‐band from 0.35 to 0.2 eV while preserving the light band feature of the L‐band. Consequently, a high power factor (PF) of 119.2 μW cm−1 K−2 at 300 K is achieved for p‐type SnTe under 5 GPa. Chemical pressure also induces conduction band convergence, significantly enhancing the PF of n‐type SnTe. Additionally, the interplay between pressure‐induced phonon modes leads to a moderate increase in lattice thermal conductivity of SnTe below 3 GPa, which combined with the significantly enhanced PF, contributes to a large enhancement in ZT. Consequently, predicted ZT values of 2.12 at 650 K and 2.55 at 850 K are obtained for p‐ and n‐type SnTe, respectively, showcasing substantial performance enhancements.

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