Abstract:For emerging two-dimension materials, transition-metal dichalcogenides and MXenes have arrested massive attractiveness of investigators. They are diffusely applied in photocatalytic water splitting, photodetector and capacitor on account of their attractive electronic and physical properties. To explore characteristics of MXene/Janus MXY heterostructures, Zr2CO2/MoSSe heterostructures are systematically investigated which employed the first-principles calculations. The results of band structure, density of states and band edge diagram illustrate that the Zr2CO2/MoSSe (Se atoms in the interface) heterostructure is an indirect band gap semiconductor (0.85 eV) and exhibits type II band arrangement which can separate carriers effectively. Comparison with individual Zr2CO2 and MoSSe, the formation of heterostructure can procure higher-intensity and wider-range optical absorption. In addition, the formation of Zr2CO2/MoSSe heterostructure implements high electron and hole mobilities along zigzag direction up to 2526.86 cm2V−1s−1 and 1462.51 cm2V−1s−1, respectively, which is remarkably profitable for upgrading its photocatalytic efficiency. To further comprehensively acquaint Zr2CO2/MoSSe heterostructure, various strains and electric fields are applied to modify its electrical and optical performance. Biaxial strains demand to maintain within − 6–2%, while electric fields require to sustain under positive electric fields. In consequence, the Zr2CO2/MoSSe van der Waals heterostructures conceive prosperous potential to be adopted in high-performance photocatalysts.

Strain Engineering and Electric Field Tunable Electronic Properties of Janus MoSSe/WX2 (X = S, Se) van der Waals Heterostructures

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Tunable electronic structures in BP/MoSSe van der Waals heterostructures by external electric field and strain

First-principles Calculations on Strain and Electric Field Induced Band Modulation and Phase Transition of Bilayer WSe 2 MoS 2 Heterostructure

Geometric, electronic, and optical properties of MoS 2 /WSSe van der Waals heterojunctions: a first-principles study

Strain-tunable Electronic and Optical Properties of Novel MoSSe/InSe Van Der Waals Heterostructures

Engineering the band structure of type-II MoSe2/WSe2 van der Waals heterostructure by electric field and twist angle: A firstprinciples perspective

Strain and electric field tuning the electronic properties of two-dimensional MoS2/ScCl3 van der Waals heterostructure

Electric fields and strains effect on the electronic and optical properties of Zr2CO2/MoSSe van der Waals heterostructure

Electric Field Modulation of the Band Structure in MoS2/WS2 Van Der Waals Heterostructure

Tunable Band-Structures of MSe2/C3N (M = Mo and W) Van Der Waals Heterojunctions

Electronic Properties of MoS2/Be2C Van Der Waals Heterostructure: Effect of Bi-axil Strain and Vertical Electric Field

Modulation of the Electronic Properties of Two-Dimensional MoTe2/WSe2 Heterostructure by Electrical Field

Electric Field and Strain Tuned the Electronic and Optical Properties of Zr2CO2/MoSe2 Van Der Waals Heterojunction

Electric Field Effects on the Electronic Structures of MoS2/antimonene Van Der Waals Heterostructure

Electronic and Optical Properties of Pristine and Vertical and Lateral Heterostructures of Janus MoSSe and WSSe

Strain-tunable electronic structure and anisotropic transport properties in Janus MoSSe and g-SiC van der Waals heterostructure

Electronic and Optical Properties of Two-Dimensional Heterostructures Based on Janus XSSe (X = Mo, W) and Mg(OH)2: a First Principles Investigation

The strain effect on the electronic properties of the MoSSe/WSSe van der Waals heterostructure: a first-principles study

Room Temperature Bound Excitons and Strain-Tunable Carrier Mobilities in Janus Monolayer Transition-Metal Dichalcogenides.

Strain engineering the structures and electronic properties of Janus monolayer transition-metal dichalcogenides