Abstract:Two-dimensional (2D) van der Waals (vdw) heterojunction devices exploiting unique physical properties are the backbone of new electrical, magnetic, and optical sensing technologies, a key advantage of 2D superior to the bulk. Here, we proposed the black phosphorus/MoS2 vdw heterostructure (BP/MoS2) as a good 2D semiconductor with a series of encouraging functionalities. Rather than individual pand n-type semiconductors, the BP/MoS2 heterostructure possesses a clear NP junction at the interface with a half indirect band gap of a pristine BP monolayer. Compared to the original 2D BP, a non-ignorable height fluctuation of the BP sheet is found on the MoS2 sheet, resulting in similar to 9 degrees distortion. In which, the arching degree of the BP layer is performing a strong modulation on the electronic properties, which can be tuned by the external strains. As a result, an irregular indirect-direct semiconducting transition and semiconductor-metal transition are found under strain engineering. This unusual electronic tunability under strains is attributed to the large differences in the mechanical properties of BP and MoS2 layers. The electronic property of the 2D BP/MoS2 heterostructure can also be manipulated significantly by an electric field. High visiblelight absorption is found in this heterostructure as the photoexcited electrons and holes can be well separated due to the staggeredgap band alignment effect. All these desired properties render the 2D BP/MoS2 heterostructure a promising candidate in the electronic and photoelectronic devices.

Tunable electronic structures in BP/MoSSe van der Waals heterostructures by external electric field and strain

Modulation of electronic and optical properties of BlueP/MoSSe heterostructures via biaxial strain and vertical electric field

A van der Waals pn heterojunction with organic/inorganic semiconductors

Tuning electronic and optical properties of BlueP/MoSe2 van der Waals heterostructures by strain and external electric field

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

The Role of the Height Fluctuation Effect in the Tunable Interfacial Electronic Structure of the Vertically Stacked BP/MoS2 Heterojunction

First-principles insights of electronic properties of Blue Phosphorus/MoSi2N4 van der Waals heterostructure via vertical electric field and biaxial strain

The structure and electronic properties of the MoSe<sub>2</sub>/PtS<sub>2</sub> van der Waals heterostructure

Effect of Vertical Strain and In-Plane Biaxial Strain on Type-Ii MoSi2N4/Cs3Bi2I9 Van Der Waals Heterostructure

Interlayer angle-dependent electronic structure and optoelectronic properties of BP-MoS2 heterostructure: A first principle study

Mechanical strain and electric field tunable electronic structure of black/violet phosphorene van der Waals heterostructure: From type I to Z-scheme system

Electric Field Modulation of the Band Structure in MoS2/WS2 Van Der Waals Heterostructure

Modulated electronic and optical properties of bilayer/trilayer Blue Phosphorene/MoX2 (X=S, Se) van der Waals heterostructures

Construction of 2D Lateral Pseudoheterostructures by Strain Engineering

Exploring the versatility in the MoSe2/WS2 heterostructures

Strain and electric field tuning the electronic properties of two-dimensional MoS2/ScCl3 van der Waals heterostructure

Band Alignment in Black Phosphorus/Transition Metal Dichalcogenide Heterolayers: Impact of Charge Redistribution, Electric Field, Strain and Layer Engineering

Strain-Induced Electronic Structure Changes in Stacked van der Waals Heterostructures

The First-Principles Study of External Strain Tuning the Electronic and Optical Properties of the 2D MoTe2/PtS2 van der Waals Heterostructure

Tuning electronic and optical properties of two-dimensional vertical van der Waals blue Phosphorene/SnS 2 heterostructure by strain and electric field

First principles study of BAs/MoSi2N4 van der Waals heterostructure: Tunable Electronic and Optical Properties via Vertical Strain