Abstract:<div class="abstract-group"> <section class="article-section article-section__abstract" lang="en" data-lang="en" id="section-1-en"> <h3 class="article-section__header main abstractlang_en main">Abstract</h3> <div class="article-section__content en main"> <p>With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by the physical barrier termed “Boltzmann Tyranny.” Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit. To solve these problems, a ferroelectric negative capacitance field‐effect transistor (Fe‐NCFET) is proposed in order to reduce the subthreshold swing (SS) through internal voltage amplification mechanism, thus effectively scaling the supply voltage and significantly lowering the power dissipation of ULSI. In this Review, representative research results on NCFET are comprehensively reviewed to offer benefits for further study. Here, the background and significance of NCFETs are introduced, and the physical essence of negative capacitance effect is reviewed. Then, physical models and simulation methods of NCFETs are classified and discussed under the consideration of three basic gate structures. Several influencing factors of device performance such as SS, on‐off ratio, and hysteresis, are also theoretically analyzed. Moreover, the experimental results of NCFETs based on different ferroelectric materials are summarized. Finally, with the combination of NC effect and two‐dimentional materials, FinFET, and tunneling FET, respectively, several novel and potential NCFETs are presented, and the outlook of NCFETs is proposed. </p>

Negative Capacitance Tunneling Field Effect Transistors Based on Monolayer Arsenene, Antimonene, and Bismuthene

Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors

Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene

Sub-5 Nm Monolayer Arsenene and Antimonene Transistors

Sub-10 Nm Tunneling Field-Effect Transistors Based on Monolayer Group IV Mono-Chalcogenides

Atomically Thin Van Der Waals Tunnel Field-Effect Transistors and Its Potential for Applications

High-performance sub-10 nm monolayer black arsenic phosphorus tunneling transistors

A T-shaped gate tunneling field effect transistor with negative capacitance, super-steep subthreshold swing

An all two-dimensional vertical heterostructure graphene/CuInP 2 S 6 /MoS 2 for negative capacitance field effect transistor

Negative Capacitance Transistors with Monolayer Black Phosphorus

Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

Modulating Tunneling Width and Energy Window for High-on-current Two-Dimensional Tunnel Field-Effect Transistors

Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current

High-performance sub-10-nm monolayer black phosphorene tunneling transistors

Negative Transconductance and Negative Differential Resistance in Asymmetric Narrow Bandgap 2D-3D Heterostructures

Sub-5 Nm Monolayer Black Phosphorene Tunneling Transistors.

Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors

Ferroelectric Negative Capacitance Field Effect Transistor

2D Negative Capacitance Field-Effect Transistor with Organic Ferroelectrics

Enhanced interband tunneling in two-dimensional tunneling transistors through anisotropic energy dispersion

Sub-5 Nm Monolayer MoS2 Transistors Toward Low-Power Devices