Pulsed laser deposition of complex oxide heteroepitaxy

Yen-Lin Huang,Heng-Jui Liu,Chun-Hao Ma,Pu Yu,Ying-Hao Chu,Jan-Chi Yang

DOI: https://doi.org/10.1016/j.cjph.2019.05.030

IF: 3.957

2019-01-01

Chinese Journal of Physics

Abstract:•General capabilities of pulsed laser deposition are described.•Oxide heteroepitaxy via pulsed laser deposition is reviewed.•Epitaxial heterostructures, nanostructures, and freestanding matters are reviewed.

What problem does this paper attempt to address?

Recent advances in pulsed-laser deposition of complex-oxides

H. M. Christen,G. Eres

DOI: https://doi.org/10.1088/0953-8984/20/26/264005

2008-02-23

Abstract:Pulsed-laser deposition (PLD) is one of the most promising techniques for the formation of complex-oxide heterostructures, superlattices, and well-controlled interfaces. The first part of this paper presents a review of several useful modifications of the process, including methods inspired by combinatorial approaches. We then discuss detailed growth kinetics results, which illustrate that 'true' layer-by-layer (LBL) growth can only be approached, but not fully met, even though many characterization techniques reveal interfaces with unexpected sharpness. Time-resolved surface x-ray diffraction measurements show that crystallization and the majority of interlayer mass transport occur on time scales that are comparable to those of the plume/substrate interaction, providing direct experimental evidence that a growth regime exists in which non-thermal processes dominate PLD. This understanding shows how kinetic growth manipulation can bring PLD closer to ideal LBL than any other growth method available today.

Other Condensed Matter,Materials Science
Pulsed Laser Deposition of a Ga2O3 Thin Film for an Optoelectronic Synaptic Device.

Longxing Su,Sudong Wu,Xiaofei Wang,Ke Sun,Teng Yun,Yongping Du,Jianguo Lu

DOI: https://doi.org/10.1364/ol.513737

IF: 3.6

2024-01-01

Optics Letters

Abstract:With the rapid development of information era, the traditional von Neumann architecture faces the computing bottleneck, and integration of memory and perception is regarded as a potential solution. Herein, a Ga2O3/Si heterojunction based multi-modulated optoelectronic synaptic device is fabricated and demonstrated. As stimulated by ultraviolet (UV) optical spikes, the heterojunction device reveals typical synaptic functions of excitatory-postsynaptic current (EPSC), paired-pulse facilitation (PPF), spike-timing-dependent plasticity (STDP), and switch between short-term memory (STM) and long-term memory (LTM). In addition, stronger stimulations like higher reading voltage, stronger optical stimulated intensity, and longer pulse duration time can significantly prolong the attenuation of EPSC, which contributes to the improvement of the forgetting process. Our work provides a potential strategy for future neuromorphic computation through a UV light driven stimulation.
Pulsed Laser Deposition for Complex Oxide Thin Film and Nanostructure

Chunrui Ma,Chonglin Chen

DOI: https://doi.org/10.1002/9783527696406.ch1

2016-01-01

Abstract:Chapter 1 Pulsed Laser Deposition for Complex Oxide Thin Film and Nanostructure Chunrui Ma, Chunrui Ma Xi'an Jiaotong University, School of Materials Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, No.28, Xianning West Road, Xi'an, Shaanxi, 710049 P. R. ChinaSearch for more papers by this authorChonglin Chen, Chonglin Chen University of Texas at San Antonio, Department of Physics and Astronomy, One UTSA Circle, San Antonio, TX 78249 USASearch for more papers by this author Chunrui Ma, Chunrui Ma Xi'an Jiaotong University, School of Materials Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, No.28, Xianning West Road, Xi'an, Shaanxi, 710049 P. R. ChinaSearch for more papers by this authorChonglin Chen, Chonglin Chen University of Texas at San Antonio, Department of Physics and Astronomy, One UTSA Circle, San Antonio, TX 78249 USASearch for more papers by this author Book Editor(s):Yuan Lin, Yuan Lin University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin films and Integrated Devices, No. 4, Section 2, North Jianshe Road, Chengdu, Sichuan, 610054 PR ChinaSearch for more papers by this authorXin Chen, Xin Chen East China University of Science and Technology, 130 Meilong Road, 200237 Shanghai, ChinaSearch for more papers by this author First published: 08 September 2016 https://doi.org/10.1002/9783527696406.ch1Citations: 4 AboutPDFPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShareShare a linkShare onFacebookTwitterLinked InRedditWechat Summary Pulsed laser deposition (PLD) is one of the most promising techniques for the formation of complex-oxide heterostructures and nanostructure due to its simple setup and it can stoichiometrically transfer a material from a solid source to a substrate to form its thin film. This chapter details the PLD setup and focus primarily on operating principle, growth mechanism and parameter of PLD for complex oxide thin film and nanostructure. Citing Literature Advanced Nano Deposition Methods RelatedInformation
Constructing Oxide Interfaces and Heterostructures by Atomic Layer-By-Layer Laser Molecular Beam Epitaxy

Qingyu Lei,Maryam Golalikhani,Bruce A. Davidson,Guozhen Liu,Darrell G. Schlom,Qiao,Yimei Zhu,Ravini U. Chandrasena,Weibing Yang,Alexander X. Gray,Elke Arenholz,Andrew K. Farrar,Dmitri A. Tenne,Minhui Hu,Jiandong Guo,Rakesh K. Singh,Xiaoxing Xi

DOI: https://doi.org/10.1038/s41535-017-0015-x

IF: 6.856

2017-01-01

npj Quantum Materials

Abstract:Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr 1+ x Ti 1- x O 3+δ , Ruddlesden–Popper phase La n +1 Ni n O 3 n +1 ( n = 4), and LaAl 1+ y O 3(1+0.5 y ) /SrTiO 3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With atomic layer-by-layer laser molecular-beam epitaxy we have produced conducting LaAlO 3 /SrTiO 3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.
Epitaxy of Fe3O4 on Si(001) by pulsed laser deposition using a TiN/MgO buffer layer

D. Reisinger,M. Schonecke,T. Brenninger,M. Opel,A. Erb,L. Alff,R. Gross

DOI: https://doi.org/10.1063/1.1587885

2003-02-23

Abstract:Epitaxy of oxide materials on silicon (Si) substrates is of great interest for future functional devices using the large variety of physical properties of the oxides as ferroelectricity, ferromagnetism, or superconductivity. Recently, materials with high spin polarization of the charge carriers have become interesting for semiconductor-oxide hybrid devices in spin electronics. Here, we report on pulsed laser deposition of magnetite (Fe3O4) on Si(001) substrates cleaned by an in situ laser beam high temperature treatment. After depositing a double buffer layer of titanium nitride (TiN) and magnesium oxide (MgO), a high quality epitaxial magnetite layer can be grown as verified by RHEED intensity oscillations and high resolution x-ray diffraction.

Materials Science
Gigantic-oxidative atomic-layer-by-layer epitaxy for artificially designed complex oxides

Guangdi Zhou,Haoliang Huang,Fengzhe Wang,Heng Wang,Qishuo Yang,Zihao Nie,Wei Lv,Cui Ding,Yueying Li,Jiayi Lin,Changming Yue,Danfeng Li,Yujie Sun,Junhao Lin,Guang-Ming Zhang,Qi-Kun Xue,Zhuoyu Chen

2024-10-16

Abstract:In designing material functionalities for transition metal oxides, lattice structure and d-orbital occupancy are key determinants. However, the modulation of these two factors is inherently limited by the need to balance thermodynamic stability, growth kinetics, and stoichiometry precision, particularly for metastable phases. We introduce a methodology, namely the gigantic-oxidative atomic-layer-by-layer epitaxy (GOALL-Epitaxy), enhancing oxidation power 3-4 orders of magnitude beyond oxide molecular beam epitaxy (OMBE) and pulsed laser deposition (PLD), while ensuring atomic-layer-by-layer growth of designed complex structures. Thermodynamic stability is markedly augmented with stronger oxidation at elevated temperatures, whereas growth kinetics is sustained by laser ablation at lower temperatures. We demonstrate the accurate growth of complex nickelates and cuprates, especially an artificially designed structure with alternating single and double NiO2 layers possessing distinct nominal d-orbital occupancy, as a parent of high-temperature superconductor. The GOALL-Epitaxy enables material discovery within the vastly broadened growth parameter space.

Strongly Correlated Electrons,Materials Science,Superconductivity
Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

A. Herklotz,K. Dörr,T. Z. Ward,G. Eres,H. M. Christen,M. D. Biegalski

DOI: https://doi.org/10.1063/1.4916948

IF: 4

2015-03-30

Applied Physics Letters

Abstract:To have precise atomic layer control over interfaces, we examine the growth of complex oxides through the sequential deposition from binary targets by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to control the growth and achieve films with excellent structural quality. The growth from binary oxide targets is fundamentally different from single target growth modes and shows more similarities to shuttered growth by molecular beam epitaxy. The RHEED intensity oscillations of non-stoichiometric growth are consistent with a model of island growth and accumulation of excess material on the surface that can be utilized to determine the correct stoichiometry for growth. Correct monolayer doses can be determined through an envelope frequency in the RHEED intensity oscillations. In order to demonstrate the ability of this growth technique to create complex heterostructures, the artificial n = 2 and 3 Srn+1TinO3n+1 Ruddlesden-Popper phases are grown with good long-range order. This method enables the precise unit-cell level control over the structure of perovskite-type oxides, and thus the growth of complex materials with improved structural quality and electronic functionality.

physics, applied
State of the art, trends, and opportunities for oxide epitaxy

F. V. E. Hensling,W. Braun,D. Y. Kim,L. N. Majer,S. Smink,B. D. Faeth,J. Mannhart

DOI: https://doi.org/10.1063/5.0196883

IF: 6.6351

2024-04-01

APL Materials

Abstract:Oxides have attracted enormous attention for both application-driven and fundamental solid-state research owing to their broad range of unusual and unique properties. Oxides play an important role in countless applications, e.g., as catalysts or functional materials in electronic devices. The ability to produce high-quality epitaxial films is often crucial for these purposes. Various approaches to oxide epitaxy have been evolving for many years, each of which has its own features and strengths. However, oxide epitaxy also poses numerous challenges, the main ones being (1) the difficulty of finding a universal, versatile, and clean way to transfer an element from a source onto a substrate and (2) the ability to control the phase formation in a growing film. For oxides, this is an especially relevant topic due to the high oxidization potentials needed to achieve many desired compounds, the high temperatures required for numerous oxide phases to form, and the high temperatures necessary to grow films in adsorption-controlled growth modes. We provide a non-exhaustive overview of the state-of-the-art of oxide epitaxy within the context of these challenges. We also examine exciting advances and recent trends to overcome those challenges. Concluding, we discuss the implications of ongoing developments and the future of oxide epitaxy. An emphasis is put on thermal laser epitaxy and CO2 laser heaters, which we deem especially promising.

materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied
Pulsed Laser Deposition of Large-Sized Superlattice Films with High Uniformity.

Biying Ye,Tian Miao,Yi Zhu,Haiming Huang,Yulong Yang,Mingming Shuai,Zhifei Zhu,Hangwen Guo,Wenbin Wang,Yinyan Zhu,Lifeng Yin,Jian Shen

DOI: https://doi.org/10.1063/5.0068795

2021-01-01

Abstract:Oxide superlattices often exhibit emergent physical properties that are desirable for future information device applications. The most common growth technique for fabrication of oxide superlattices is pulsed laser deposition (PLD), which is convenient yet powerful for the growth of various oxide superlattices. However, the sample size prepared by PLD is rather small confined by the plasmon plume, which greatly limits its potential for device applications. Here, we design a PLD system that is capable of fabricating large-sized oxide superlattices with high uniformity. Specifically, during growth, the laser beam scans the target surface by combining the pitch and yaw angle rotation of the high reflective mirror and the linear motion of the focus lens. A SiC susceptor is placed in between the sample holder and the substrate to improve the large area infrared heating efficiency. Using such a system, droplet-free 10 × 10 mm2 [(LSMO)12/(PCMO)6]7 superlattices are epitaxially grown with the same period of superlattices across the whole sample areas. The high uniformity of the superlattices is further illustrated by near identical physical properties of all regions of the superlattice films. The present PLD system can be used to grow various kinds of oxide superlattices with the area size as large as 2 in., which is highly useful for device applications of oxides.
Surface Amorphous Oxides Induced Electron Transfer into Complex Oxide Heterointerfaces

Zheng Chen,Xing Chen,Baohua Mao,Qingtian Li,Meng Zhang,Hai Bo,Zhi Liu,He Tian,Ze Zhang,Yanwu Xie

DOI: https://doi.org/10.1002/admi.201801216

IF: 5.4

2018-01-01

Advanced Materials Interfaces

Abstract:Complex oxide heterointerfaces are interesting because they host many exotic emergent phenomena and have potential for unconventional oxide electronics. Crucial to explore these phenomena and applications is controlling electron transfer. In the past, this has been difficult to achieve in many heterointerfaces such as LaAlO3/SrTiO3 fabricated on SrO‐terminated SrTiO3, while a great success has been made in LaAlO3/SrTiO3 fabricated on TiO2‐terminated SrTiO3. Here, a variety of (both TiO2‐ and SrO‐terminated) SrTiO3‐based heterostructures (not limited to LaAlO3/SrTiO3) are capped with different kinds of amorphous oxides prepared at room temperature. It is found that more than 1014 cm−2 electrons can be induced into heterointerfaces that are originally either conducting or insulating. By a thorough examination of various combinations between different heterostructues and different amorphous oxides, it is concluded that the observed effect is dominated by electron transfer from surface amorphous oxides into complex oxide heterointerfaces.
Reconstruction-Stabilized Epitaxy of LaCoO3/SrTiO3(111) Heterostructures by Pulsed Laser Deposition

Minhui Hu,Qinghua Zhang,Lin Gu,Qinlin Guo,Yanwei Cao,M. Kareev,J. Chakhalian,Jiandong Guo

DOI: https://doi.org/10.1063/1.5006298

IF: 4

2018-01-01

Applied Physics Letters

Abstract:Unlike widely explored complex oxide heterostructures grown along [001], the study of [111]-oriented heterointerfaces are very limited thus far. One of the main challenges is to overcome the polar discontinuity that hinders the epitaxy of atomically sharp interfaces. Here, by taking the LaCoO3/SrTiO3(111) as a prototype, we show that the reconstruction, which effectively compensates the surface polarity, can stabilize the epitaxy of the heterostructure with polar discontinuity. Reconstructed substrate surface is prepared, while the growth is controlled to form reconstruction on the film surface. To suppress the chemical diffusion across the interface, the growth is interrupted between each unit cell layer to allow the lattice relaxation at a lowered temperature. In this way, high quality two-dimensional growth is realized and the heterointerfaces exhibit sharpness at the atomic scale. Our work provides a path to precisely control the growth of complex oxide heterostructures along polar orientations that exhibit emergent quantum phenomena.
Complex Oxides Nanocrystals Via Pulsed Laser Ablation

Wen-I Liang,Hsiang-Jung Chen,Chun-Hao Ma,Chih-Ya Tsai,Wen-Feng Hsieh,Ying-Hao Chu

DOI: https://doi.org/10.1149/ma2013-01/3/106

2013-01-01

ECS Meeting Abstracts

Abstract:Cutting-edge nanotechnology relies on the ability to understand and manipulate the wide-spectrum of nanomaterials; and strong correlated complex oxides, with diverse intrinsic properties, dictate the material design in modern semiconductor industries and functional devices. From the growth aspect, since ternary or more oxides synthesis, for a long time, has posed a challenge to material scientists, it is necessary to explore/understand novel bottom-up nano-architecture. From the application aspect, as more and more advanced functionality development, nano-sized complex oxides become a treasure island and are still waiting to be fully exploited. Therefore, we propose to explore the 1D complex oxides nanocrystals via ambient pulsed laser ablation (PLA) fabrication (figure 1), a study that demonstrates a facile yet versatile bottom-up fabrication method as well as the new avenue for hybrid structure design in nanoscale.
Pulsed Laser Deposition 1

Kevin D. Leedy

DOI: https://doi.org/10.1007/978-3-030-37153-1_14

2020-01-01

Abstract:This chapter examines homoepitaxial β-Ga2O3 thin films fabricated by pulsed laser depositionPulsed laser deposition. The recent availability of high-quality native substrates affords investigations using a wide range of growth conditions to achieve single crystalline films by pulsed laser depositionPulsed laser deposition. Deposition parameter optimization and structural, electrical and chemical film characterization are presented for undoped and impurity-doped films. Films grown on commercially available (010) Fe compensation-doped substrates fabricated by the edge-defined film-fed growth technique and a developing Czochralski method are examined. Hall effectHall effect results from PLD Si-doped β-Ga2O3 films are compared with data produced from other vapor phase epitaxial growth techniques. The influence of substrate orientationOrientation on film properties is also studied with (010) and (001) crystals. Implementation of a PLD n+ regrowthRegrowth layer in a transistor device is demonstrated to achieve low ohmic contact resistance. Results from β-(AlxGa1−x)2O3 film studies show the potential utility of heterostructuresHeterostructure for field-effect transistor 2DEG formation.
Remote growth of oxide heteroepitaxy through MoS 2

Chun-Hao Ma,Li-Syuan Lu,Haili Song,Jhih-Wei Chen,Ping-Chun Wu,Chung-Lin Wu,Rong Huang,Wen-Hao Chang,Ying-Hao Chu

DOI: https://doi.org/10.1063/5.0045639

IF: 6.6351

2021-05-01

APL Materials

Abstract:Advanced heterostructures composed of various materials can induce new physical properties and phenomena among existing materials, representing the essential foundation for modern electronics. Recently, many works have been carried out with novel heterostructures combining three-dimensional (3D) and two-dimensional (2D) materials; however, there is a lack of promising methods to fabricate 3D/2D heterostructures due to the poor interfacial quality and the incompatibility of fabrication processes. To further study the interaction between 3D and 2D materials, the fabrication of 3D/2D heterostructures with high-quality interfaces should be attempted. Here, we show the possibility of fabricating high-quality oxide remote epitaxies through layered materials for the exploration on new functionalities. Brand new heterostructures including numerous 3D oxides and MoS<sub>2</sub> have been demonstrated and investigated. Our study clarifies a remarkable concept to realize precisely controllable 3D/2D/3D heteroepitaxies for the design and development of next-generation smart devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Development of Oxide Heteroepitaxy for Soft Technology

Ping-Chun Wu,Ying-Hao Chu

DOI: https://doi.org/10.1039/c8tc00959g

2018-01-01

Abstract:Soft technology has been an emerging field since flexible and wearable electronics started flourishing. In this research field, oxides can play an important role due to their intriguing functionalities and superior thermal and chemical stabilities. To deliver high-quality thin films or structures based on oxides, heteroepitaxy is essential. However, the lack of a suitable approach remains an obstacle for flexible oxide heteroepitaxy. Recently, due to the advancement of growth facilities and characterization tools, various techniques have been employed to acquire flexible oxide heteroepitaxy. This review highlights the methods as well as direct and indirect approaches that are essential for developing oxide heteroepitaxy with mechanical flexibility. We also provide an overview, classifying the fields in terms of applications involving flexible oxide heteroepitaxy and the development of oxide-based approaches.
Comparative study of LaNiO$_3$/LaAlO$_3$ heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

F. Wrobel,A. F. Mark,G. Christiani,W. Sigle,H.-U. Habermeier,P. A. van Aken,G. Logvenov,B. Keimer,E. Benckiser

DOI: https://doi.org/10.1063/1.4975005

2017-01-19

Abstract:Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity, microstructure as revealed by high-resolution transmission electron microscopy images and resistivity. The MBE samples show a higher density of stacking faults, but smoother interfaces and generally higher electrical conductivity. Our study identifies the opportunities and challenges of MBE and PLD growth and serves as a general guide for the choice of deposition technique for perovskite oxides.

Strongly Correlated Electrons,Materials Science
A practical guide to pulsed laser deposition

Nick A. Shepelin,Zahra P. Tehrani,Natacha Ohannessian,Christof W. Schneider,Daniele Pergolesi,Thomas Lippert

DOI: https://doi.org/10.1039/d2cs00938b

IF: 46.2

2023-03-16

Chemical Society Reviews

Abstract:Nanoscale thin films are widely implemented across a plethora of technological and scientific areas, and form the basis for many advancements that have driven human progress, owing to the high degree of functional tunability based on the chemical composition. Pulsed laser deposition is one of the multiple physical vapour deposition routes to fabricate thin films, employing laser energy to eject material from a target in the form of a plasma. A substrate, commonly a single-crystal oxide, is placed in the path of the plume and acts as a template for the arriving species from the target to coalesce and self-assemble into a thin film. This technique is tremendously useful to produce crystalline films, due to the wide range of atmospheric conditions and the extent of possible chemical complexity of the target. However, this flexibility results in a high degree of complexity, oftentimes requiring rigorous optimisation of the growth parameters to achieve high quality crystalline films with desired composition. In this tutorial review, we aim to reduce the complexity and the barrier to entry for the controlled growth of complex oxides by pulsed laser deposition. We present an overview of the fundamental and practical aspects of pulsed laser deposition, discuss the consequences of tailoring the growth parameters on the thin film properties, and describe in situ monitoring techniques that are useful in gaining a deeper understanding of the properties of the resultant films. Particular emphasis is placed on the general relationships between the growth parameters and the consequent structural, chemical and functional properties of the thin films. In the final section, we discuss the open questions within the field and possible directions to further expand the utility of pulsed laser deposition.

chemistry, multidisciplinary
Oxygen in Complex Oxide Thin Films Grown by Pulsed Laser Deposition: a Perspective

Gertjan Koster,Dave H. A. Blank,Guus A. J. H. M. Rijnders

DOI: https://doi.org/10.1007/s10948-019-05276-5

2019-10-16

Journal of Superconductivity and Novel Magnetism

Abstract:Abstract For thin film synthesis of complex oxides, one of the most important issues has always been how to oxidise the material. For a technique like pulsed laser deposition, a key benefit is the relatively high oxygen background pressure one can operate at, and therefor oxidation should be relatively straightforward. However, understanding the microscopic oxidation mechanisms turns out to be rather difficult. In this perspective, we give a brief overview of the sources of oxidation for complex oxide thin films grown by pulsed laser deposition. While it is clear what these sources are, their role in the kinetics of the formation of the crystal structure and oxygen stoichiometry is not fully understood.

physics, condensed matter, applied
Oxide molecular beam epitaxy and its applications in the study of electronic states of correlated materials

FENG Dong-Lai,SHEN Da-Wei,XU Hai-Chao,PENG Rui

2012-01-01

Physics

Abstract:Oxide molecular beam epitaxy technique has been rapidly developed in the recent years.Oxide films and heterostrutures can be made with the precision of single atomic layer,which has helped facilitate the research of high temperature superconductivity,two dimensional electron gas,and oxide-based electronics and spintronics.Taking La1-xSrxMnO3 thin film as an example,we introduce the oxide molecular beam epitaxy and basic characterizations for a perovskite thin film.Moreover,we show that by combining oxide molecular beam epitaxy and angle resolved photoemission spectroscopy,in-situ electronic structure measurements become feasible for thin films.The measured electronic structure of La1-xSrxMnO3 thin film shows fairly good agreement with the band structure calculations,while previously the electronic structure of such uncleavable cubic-structured materials usually could not be obtained with photoemission spectroscopy.
Remote Growth of Oxide Heteroepitaxy Through MoS2

Chun-Hao Ma,Li-Syuan Lu,Haili Song,Jhih-Wei Chen,Ping-Chun Wu,Chung-Lin Wu,Rong Huang,Wen-Hao Chang,Ying-Hao Chu

DOI: https://doi.org/10.1063/5.0045639

IF: 6.6351

2021-01-01

APL Materials

Abstract:Advanced heterostructures composed of various materials can induce new physical properties and phenomena among existing materials, representing the essential foundation for modern electronics. Recently, many works have been carried out with novel heterostructures combining three-dimensional (3D) and two-dimensional (2D) materials; however, there is a lack of promising methods to fabricate 3D/2D heterostructures due to the poor interfacial quality and the incompatibility of fabrication processes. To further study the interaction between 3D and 2D materials, the fabrication of 3D/2D heterostructures with high-quality interfaces should be attempted. Here, we show the possibility of fabricating high-quality oxide remote epitaxies through layered materials for the exploration on new functionalities. Brand new heterostructures including numerous 3D oxides and MoS2 have been demonstrated and investigated. Our study clarifies a remarkable concept to realize precisely controllable 3D/2D/3D heteroepitaxies for the design and development of next-generation smart devices.

Pulsed laser deposition of complex oxide heteroepitaxy

Recent advances in pulsed-laser deposition of complex-oxides

Pulsed Laser Deposition of a Ga2O3 Thin Film for an Optoelectronic Synaptic Device.

Pulsed Laser Deposition for Complex Oxide Thin Film and Nanostructure

Constructing Oxide Interfaces and Heterostructures by Atomic Layer-By-Layer Laser Molecular Beam Epitaxy

Epitaxy of Fe3O4 on Si(001) by pulsed laser deposition using a TiN/MgO buffer layer

Gigantic-oxidative atomic-layer-by-layer epitaxy for artificially designed complex oxides

Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

State of the art, trends, and opportunities for oxide epitaxy

Pulsed Laser Deposition of Large-Sized Superlattice Films with High Uniformity.

Surface Amorphous Oxides Induced Electron Transfer into Complex Oxide Heterointerfaces

Reconstruction-Stabilized Epitaxy of LaCoO3/SrTiO3(111) Heterostructures by Pulsed Laser Deposition

Complex Oxides Nanocrystals Via Pulsed Laser Ablation

Pulsed Laser Deposition 1

Remote growth of oxide heteroepitaxy through MoS 2

Development of Oxide Heteroepitaxy for Soft Technology

Comparative study of LaNiO$_3$/LaAlO$_3$ heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

A practical guide to pulsed laser deposition

Oxygen in Complex Oxide Thin Films Grown by Pulsed Laser Deposition: a Perspective

Oxide molecular beam epitaxy and its applications in the study of electronic states of correlated materials

Remote Growth of Oxide Heteroepitaxy Through MoS2