The Effect of Ni/Sn Doping on the Thermoelectric Properties of BiSbTe Polycrystalline Bulks

Xiaoming Hu,Qiusheng Xiang,Dong Kong,Xian Fan,Bo Feng,Zhao Pan,Peihai Liu,Rusong Li,Guangqiang Li,Yawei Li
DOI: https://doi.org/10.1016/j.jssc.2019.06.006
IF: 3.3
2019-01-01
Journal of Solid State Chemistry
Abstract:The diffusion of Ni and Sn is undesirable in thermoelectric (TE) device. However, the quantitative effect on TE properties is unknown. In this work, the effect of Ni/Sn doping on the TE properties of p-type Bi2Te3 based alloys and the corresponding mechanism are investigated to provide beneficial reference for device designers and researchers. The results show that nickel doping in Bi0.4Sb1.6Te3 can make the intrinsic excitation temperature shift to lower temperature region due to the formation of the second phase NiTe, which greatly reduces the carrier concentration and increases the electrical resistivity. Ultimately, the thermoelectric figure of merit (ZT value) deteriorates rapidly with the increase of Ni content, and only 7 wt parts per thousand Ni results in a 32% drop in ZT value. Tin doping moves the intrinsic excitation temperature to higher temperature region due to the promotion of Sn-'Bi to the generation of anti-sites (Bi'(Te) and Sb'(Te)), which significantly increases the carrier concentration and deteriorates the Seebeck coefficient. At last, the ZT value also declines sharply with the increase of Sn content, and just 7 wt parts per thousand Sn doping results in a 52% drop in ZT value.
What problem does this paper attempt to address?