Abstract:An SRAM (static random access memory)-based reprogrammable FPGA (field programmable gate array) is investigated for space applications. A new commercial prototype, named the RS family, was used as an example for the investigation. The device is fabricated in a 0.25 /spl mu/m CMOS technology. Its architecture is reviewed to provide a better understanding of the impact of single event upset (SEU) on the device during operation. The SEU effect of different memories available on the device is evaluated. Heavy ion test data and SPICE simulations are used integrally to extract the threshold LET (linear energy transfer). Together with the saturation cross-section measurement from the layout, a rate prediction is done on each memory type. The SEU in the configuration SRAM is identified as the dominant failure mode and is discussed in detail. The single event transient error in combinational logic is also investigated and simulated by SPICE. SEU mitigation by hardening the memories and employing EDAC (error detection and correction) at the device level are presented. For the configuration SRAM (CSRAM) cell, the trade-off between resistor dc-coupling and redundancy hardening techniques are investigated with interesting results. Preliminary heavy ion test data show no sign of SEL (single event latch-up). With regard to ionizing radiation effects, the increase in static leakage current (static I/sub CC/) measured indicates a device tolerance of approximately 50 krad(Si).

Study of SEU radiation experimental system technology of SRAM-based FPGA

SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Comparison of Single Event Effect and Space Electrostatic Discharge Effect on FPGA Signal Transmission

SEU sensitivity and large spacing TMR efficiency of Kintex-7 and Virtex-7 FPGAs

Test and Inquiry of FPGA SEU-Hardening by TMR

Design and Verification of Multiple SEU Mitigated Circuits on SRAM-based FPGA System

Testing of a new type SEU-tolerant SRAM

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA

A Novel High-Density Single-Event Upset Hardened Configurable SRAM Applied to FPGA

SRAM based re-programmable FPGA for space applications

Simulation of SEU Response of Advanced 20 Nm FDSOI SRAMs

CRC Circuit Design for SRAM-Based FPGA Configuration Bit Correction

A New Approach To Detect-Mitigate-Correct Radiation-Induced Faults For Sram-Based Fpgas In Aerospace Application

Fault-Tolerant Design of Memory Module for Pica-satellite On-Board Computer

The Research of FPGA Reliability Based on Redundancy Methods

SRAM-Based FPGA SEU Fault Propagation Model

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

Radioresistance Placement Algorithm for FPGA Based on SRAM Structure

Improving Fault Tolerance for FPGA SoCs Through Post Radiation Design Analysis

Fault modeling and characteristics of SRAM-based FPGAs (abstract only).

300 Thousand Gates Single Event Effect Hardened SRAM-based FPGA for Space Application (Abstract Only).