Abstract:We introduced an organic interlayer into the Schottky contact interface to control the contact property. After inserting an 11-nm-thick polyethylenimine (PEI) interlayer between the aluminum (Al) source/drain electrode and the cuprous oxide (Cu2O) channel layer, the Cu2O thin-film transistors (TFTs) exhibited improved electrical characteristics compared with Cu2O TFTs without a PEI interlayer; the field-effect mobility improved from 0.02 to 0.12 cm2/V s, the subthreshold swing decreased from 14.82 to 7.34 V/dec, and the on/off current ratio increased from 2.43 × 102 to 1.47 × 103, respectively. Careful investigation of the contact interface between the source/drain electrode and the channel layer established that the performance improvements were caused by the formation of electric dipoles in the PEI interlayer. These electric dipoles reduced the Schottky barrier height by neutralizing the charges at the metal/oxide semiconductor interface, and the holes passed the reduced Schottky barrier by means of tunneling or thermionic injection. In this way, p-type oxide TFTs, which generally need a noble metal having a high work function as an electrode, were demonstrated with a low-work-function metal. As a basic application for logic circuits, a complementary inverter based on n-type indium-gallium-zinc oxide and p-type Cu2O TFTs was fabricated using only Al source/drain electrodes. This research achieved advances in low-cost circuit design by broadening the electrode metals available for the manufacture of p-type oxide semiconductor-based electronics.

Polyol Reduction: A Low-Temperature Eco-Friendly Solution Process for P-Channel Copper Oxide-Based Transistors and Inverter Circuits.

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Impact of Humidity on the Performance and Stability of Solution-Processed Copper Oxide Transistors

Modulation of the Al/Cu2O Schottky Barrier Height for p-Type Oxide TFTs Using a Polyethylenimine Interlayer

Solution Combustion Synthesis: Low-Temperature Processing for P-Type Cu:Nio Thin Films for Transparent Electronics

Effective Evaluation Strategy Toward Low Temperature Solution-Processed Oxide Dielectrics for TFT Device

Fabrication of P-Type Copper Oxide Thin-Film Transisters at Different Oxygen Partial Pressure

Eco-Friendly Water-Induced Aluminum Oxide Dielectrics and Their Application in A Hybrid Metal Oxide/Polymer Tft

Solution-Processed P-Type Copper Oxide Thin-Film Transistors Fabricated by Using A One-Step Vacuum Annealing Technique

Thermal Budget Reduction in Metal Oxide Thin-Film Transistors via Planarization Process

Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.

Solution‐Processed Alkaline Lithium Oxide Dielectrics for Applications in N‐ and P‐type Thin‐Film Transistors

Fabrication of Zinc Oxide Thin Film Transistors via Low-Temperature Solution Processing

Aqueous solution-deposited aluminum-gallium-oxide alloy gate dielectrics for low voltage fully oxide thin film transistors

Aqueous Solution Induced High-Dielectric-Constant AlOx :Y Films for Thin-Film Transistor Applications

High Carrier Mobility Low-Voltage ZnO Thin Film Transistors Fabricated at a Low Temperature Via Solution Processing

Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric.

Key Roles of Trace Oxygen Treatment for High‐Performance Zn‐Doped CuI P‐channel Transistors