Abstract:Modern industry routinely uses sophisticated microscopic methods for quality control and for predicting the performance of manufactured products. These processes typically exploit optical emission and scattering phenomena—such as electron backscattered diffraction and energy-dispersive x-ray spectroscopy—using equipment attached to conventional scanning electron microscopy (SEM). In silicon-based metal oxide semiconductor (MOS) devices, residual stresses may remain from the manufacturing process owing to a mismatch in thermal expansion coefficients between constituent materials. Thermal fatigue and electromigration (displacement of atoms induced by electric current) phenomena can also affect the devices’ micromechanical state. Up to now, SEM has not been applied to these problems for two reasons. First, the effects of strain on electronic transitions arising from band-gap or optically active point defects, as well as their interaction with the electron probe, were not fully understood. Second, no comprehensive algorithm could be found that took into account the superposition of several chemical, physical, and mechanical effects (i.e., temperature gradients, self-absorption, chemical gradients) to extract the stress information from the luminescence spectrum. Yet, the spatial resolution of the SEM would be highly advantageous in residual stress assessment. We recently developed a spectroscopic method for analyzing materials and devices in the SEM that works by visualizing surface and subsurface stress fields. Further, we have used the technique to solve a number of important industrial problems, for example, the stress stored in interconnect structures (like inFigure 1. An SEM image (a) and a CL/PS stress image (b) of the immediate neighborhood of the crack tip in a gallium nitride crystal. The stress map represents the spatial variation of the trace of the stress tensor acquired with a spatial resolution of 30nm.

Development of an Infrared Polarized Microscope for Evaluation of High Gradient Stress with a Small Distribution Area on a Silicon Chip.

A Novel Approach to Study Patterned Thin Film Local Stress for Microelectronics Application

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope

Ultra-sensitive, Highly Reproducible Film Stress Characterization Using Flexible Suspended Thin Silicon Plates and Local Curvature Measurements

A new method for high resolution curvature measurement applied to stress monitoring in thin films

Simultaneous Micro-Stress and Strain Measurement with an Optical Microscope

High Precision Thermal Stress Study On Flip Chips By Synchrotron Polychromatic X-Ray Microdiffraction

Design and Application Testing of Imaging Probe for Strain Measurement

Decoupling analysis of stress components on monocrystalline silicon using angle-resolved oblique backscattering Raman spectroscopy

High-resolution Stress Assessments of Interconnect/dielectric Electronic Patterns Using Optically Active Point Defects of Silica Glass As a Stress Sensor

Full Field Stress/Birefringence Analysis With A Polarizing Microscope

Micro-Raman spectroscopy measurement of stress in silicon

Monitoring The Stress Evolution Of Through Silicon Vias During Thermal Cycling With Infrared Photoelasticity

Looking at the Nanomechanics of Electronic Devices under the Scanning Electronic Microscope

Apparatus for Real-Time Measurement of Stress in Thin Films at Elevated Temperatures

A Photo-Stimulated Spectroscopic Method for Spatially Resolved Stress Analysis in Hetero-Epitaxial Films

A Nondestructive Raman Spectra Stress 2D Analysis for the Pressure Sensor Sensitive Silicon Membrane

An in Situ System for Simultaneous Stress Measurement and Optical Observation of Silicon Thin Film Electrodes

Measuring Stress Birefringence in Small Si Samples

Practical method for improving the accuracy of weakly stressed birefringence detection by circularly polarized instantaneous photoelasticity