Transfer Printing of VO2 Thin Films Using MoS2/SiO2 Van Der Waals Heterojunctions

Xiao Min,Sun Rui-Zhi,Li Yan-Fang,Kang Tong-Tong,Qin Jun,Yang Run,Bi Lei
DOI: https://doi.org/10.15541/jim20190023
IF: 1.292
2019-01-01
Journal of Inorganic Materials
Abstract:In recent years, flexible electronic devices have attracted much attention due to the potential applications in the fields of the Internet of Things and bioelectronics. The integration of functional oxide materials in flexible polymers has been proven an effective way to achieve high performance flexible electronic devices. However, due to high fabrication temperatures, the synthesis of high-quality oxide films directly on flexible polymer substrates remains a significant challenge. This study proposed a method for transferring printing large-area VO2 film based on MoS2/SiO2 van der Waals heterojunctions. Due to different hydrophilic and hydrophobic properties of MoS2 and SiO2 films, we can dissociate the MoS2/SiO2 van der Waals heterojunction interface only by using deionized water, and transfer printing the VO2 films from Si/SiO2/MoS2/SiO2/VO2 to Si, SiO2/Si and flexible substrates. X-ray diffraction (XRD) results showed that the crystal structure of VO2 films has no difference before and after the transfer process. Temperature-dependent Raman spectrum and infrared reflectance spectrum demonstrate good metal-insulator transition (MIT) performance of VO2 films before and after transferring printing. These results indicate an effective method for transferring printing functional oxide films, which enables low-temperature integration of VO2 thin films on arbitrary substrates without introducing sacrificial layer and corrosive solvents. Our study provides a new way for integrating functional oxides for flexible wearable electronic devices applications.
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