A Universal Etching-Free Transfer of MoS 2 Films for Applications in Photodetectors

Donglin Ma,Jianping Shi,Qingqing Ji,Ke Chen,Jianbo Yin,Yuanwei Lin,Yu Zhang,Mengxi Liu,Qingliang Feng,Xiuju Song,Xuefeng Guo,Jin Zhang,Yanfeng Zhang,Zhongfan Liu

DOI: https://doi.org/10.1007/s12274-015-0866-z

IF: 9.9

2015-01-01

Nano Research

Abstract:Transferring MoS 2 films from growth substrates onto target substrates is a critical issue for their practical applications. Moreover, it remains a great challenge to avoid sample degradation and substrate destruction, because the current transfer method inevitably employs a wet chemical etching process. We developed an etching-free transfer method for transferring MoS 2 films onto arbitrary substrates by using ultrasonication. Briefly, the collapse of ultrasonication-generated microbubbles at the interface between polymer-coated MoS 2 film and substrates induce sufficient force to delaminate the MoS 2 films. Using this method, the MoS 2 films can be transferred from all substrates (silica, mica, strontium titanate, and sapphire) and retains the original sample morphology and quality. This method guarantees a simple transfer process and allows the reuse of growth substrates, without involving any hazardous etchants. The etching-free transfer method is likely to promote broad applications of MoS 2 in photodetectors.