Effect of Grinding-Induced Stress on Interface State Density of SiC/SiO2

Shi Hai Wang,Cai Ping Wan,Heng Yu Xu,Jin Ping Ao
DOI: https://doi.org/10.4028/www.scientific.net/msf.954.121
2019-01-01
Materials Science Forum
Abstract:Back-grinding process was applied to the 4H-SiC (0001) epitaxial wafers. We found that the parameters about stress increased after back-grinding process. In our work, the characterization of stress on interface state density (Dit) of SiC/SiO2 was investigated. Furthermore, the absorption of peak frequencies was also observed by fourier transform infrared spectroscopy attenuated total reflection (ATR-FTIR) analysis, and the Dit of SiC/SiO2 was obtained by quasi-static capacitance voltage (QSCV) measurement as well as C-φs method. The above results suggested that the Dit increased with the increasing grinding-induced stress.
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