Boron-carbon doped Silicon Carbide Fibers: Preparation and Property

Han-Qing Yu,Zhi-Jun Dong,Guan-Ming Yuan,Ye Cong,Xuan-Ke Li,Yong-Ming Luo
DOI: https://doi.org/10.15541/jim20180218
IF: 1.292
2019-01-01
Journal of Inorganic Materials
Abstract:The B-C doped SiC precursor was obtained by blending of polycarbosilane, polyborosilicate and xylene soluble pitch at low temperature. The resulted precursor was melt-spun into precursor fibers. The B-C doped silicon carbide fibers were finally obtained by pre-oxidation and high temperature heat-treatment of the precursor fibers successively. The composition and microstructure of B-C doped SiC precursor and its fibers were characterized by IR, XRD and SEM. Effect of the heat-treatment temperature on the composition, structure, mechanic property and oxidation resistance was studied. The results show that the introduction of boron in SiC fibers restrains the growth of SiC grains at high temperature treatment effectively, and simaltaneously improves the thermal stability of the C-doped SiC fibers. B-C doped silicon carbide fibers obtained by heating the pre-oxidized fibers at 1600 degrees C were mainly composed of beta-SiC and a small amount of O, B and N. B-C doped SiC fibers ownse better oxidation resistance than the C-doped SiC fibers, which can be attributed to the formation of borosilicate film during the high-temperature oxidation of the B-C doped SiC fibers. This film plays a role effectively in preventing the pith carbon in the doped fibers from oxidation.
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