High-Efficiency Silicon Mach-Zehnder Modulator with U-Shaped PN Junctions

Gangqiang Zhou,Linjie Zhou,Yuyao Guo,Lei Liu,Liangjun Lu,Jianping Chen

DOI: https://doi.org/10.1364/cleo_at.2019.jth2a.42

2019-01-01

Abstract:We demonstrate a silicon Mach-Zehnder modulator with U-shaped PN junctions to achieve a high modulation efficiency of 0.34 V·cm at 0 V bias. On-off key modulation is obtained at 32 Gb/s data rate. © 2019 The Author(s)

What problem does this paper attempt to address?

High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

Hao Xu,Xi Xiao,Xianyao Li,Yingtao Hu,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.015093

IF: 3.8

2012-01-01

Optics Express

Abstract:A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions. This doping profile enabled both high modulation efficiency of V pi L pi = 1.5 similar to 2.0 V.cm and low doping-induced loss of similar to 10 dB/cm by applying a relatively low doping concentration of 2 x 10(17) cm(-3). High speed operation up to 40 Gbit/s with 7.01 dB extinction ratio was experimentally demonstrated with a short phase shifter of only 750 mu m. (c) 2012 Optical Society of America
Silicon Mach-Zehnder Modulator Using a Highly-Efficient L-shape PN Junction

Gangqiang Zhou,Linjie Zhou,Yanyang Zhou,Yiming Zhong,Siqi Liu,Yuyao Guo,Lei Liu,Jianping Chen

DOI: https://doi.org/10.1117/12.2505116

2018-01-01

Abstract:We demonstrate a silicon Mach-Zehnder modulator with L-shaped PN junctions to improve the modulation efficiency. The L-shape doping profile of the PN junction is obtained through multiple ion implantations with proper dose and energy. The depletion region of the PN junction has a strong overlap with the waveguide optical mode, resulting in improved modulation efficiency. We optimize the doping conditions to get a balanced performance in terms of modulator efficiency, insertion loss, and bandwidth. The measurement of the fabricated modulator reveals that the π phase shift voltage is 2.6 V for a 3-mm-long modulation arm. The modulation efficiency thus is Vπ·Lπ = 0.78 V·cm. The static extinction ratio is about 30 dB. The on-chip insertion loss is around 8.1 dB at zero bias. The EE 3-dB bandwidth is beyond 30 GHz at -2 V DC bias. Modulation of 32 Gb/s on-off keying (OOK) and binary phase-shift keying (BPSK) signals is successfully achieved.
High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.21.004116

IF: 3.8

2013-01-01

Optics Express

Abstract:We demonstrate a high-speed silicon Mach-Zehnder modulator (MZM) with low insertion loss, based on the carrier depletion effect in a lateral PN junction. A 1.9 dB on-chip insertion loss and a V pi L pi < 2 V.cm were achieved in an MZM with a 750 mu m-long phase shifter by properly choosing the doping concentration and precisely locating the junction. High-speed modulations up to 45-60 Gbit/s have been demonstrated with an additional 1.6 dB optical loss, indicating a total insertion loss of 3.5 dB. A high extinction ratio of 7.5 dB was also realized at the bit rate of 50 Gbit/s with an acceptable insertion loss of 6.5 dB. (C)2013 Optical Society of America
Second Harmonic Distortion Comparison of Mach-Zehnder Silicon Modulators Based on Lateral and Interdigitated PN Junctions

Wei QI,Hai-feng SHAO,Hui YU,Xiao-qing JIANG

DOI: https://doi.org/10.3788/fgxb20163706.0758

2016-01-01

Chinese Journal of Luminescence

Abstract:Electro-optic modulators with high linearity are core devices of microwave photonic link. The modulation mechanism of the silicon optical modulator is based on the carrier dispersion effect which is nonlinear and its nonlinearity is highly related to the structure of PN junction. In this pa-per, the second-order spurious-free dynamic range ( SFDR2 ) is introduced to characterize the second harmonic distortion ( SHD ) of modulators. The SHD of silicon optical Mach-Zehnder modulator ( MZM) based on two most widely used doping patterns, i. e. , the lateral and the interdigitated PN junctions are compared with each other. The experimental results show that the lateral PN junction and interdigitated PN junction based MZMs have SFDR2 of 85. 11 dB·Hz1/2 and 78. 44 dB·Hz1/2 , respectively. The lateral PN junction based MZM has a better linearity.
44Gbit/s Silicon Mach-Zehnder Modulator Based on Interleaved PN Junctions

Hao Xu,Xi Xiao,Xianyao Li,Zhiyong Li

DOI: https://doi.org/10.1109/group4.2012.6324133

2012-01-01

Abstract:We report a 44 Gbit/s silicon Mach-Zehnder modulator based on interleaved PN junctions. Modulation efficiency of VπLπ=1.5~2.0 V·cm and carrier induced loss of ~1dB/mm are obtained with a moderate doping density of 2×1017 cm-3.
32-Gb/s OOK and 64-Gb/s PAM-4 Modulation Using a Single-Drive Silicon Mach–Zehnder Modulator with 2 V Drive Voltage

Gangqiang Zhou,Linjie Zhou,Yuyao Guo,Shuhuang Chen,Liangjun Lu,Lei Liu,Jianping Chen

DOI: https://doi.org/10.1109/JPHOT.2019.2954597

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:We demonstrate a high-efficiency silicon Mach-Zehnder modulator with U-shaped PN junctions. The depletion region of the U-shaped PN junction has a large overlap with the waveguide optical mode, leading to a low drive voltage. The calculated modulation efficiency is 0.33 V·cm at 0 V bias and 0.55 V·cm at -2 V bias. On-off keying (OOK) modulation and four-level pulse amplitude modulation (PAM-4) are achieved at 32 Gb/s and 64 Gb/s data rates under 2 V drive voltage, respectively. The bit error rate for the PAM-4 modulation is below the hard-decision forward error correction threshold of 3.8 × 10-3.
Mode Conversion Based Silicon Mach-Zehnder Modulator with L-shaped PN Junction for 0.37-V.cm Vπ.Lπ High Efficiency Modulation

Jiacheng Liu,Gangqiang Zhou,Jiangbing Du,Weihong Shen,Linjie Zhou,Zuyuan He

DOI: https://doi.org/10.1364/acpc.2021.t4a.175

2021-01-01

Abstract:We reported a silicon modulator with L-shaped PN junction for high efficiency modulation based on mode conversion to recycle light twice within the modulator phase shifter. Record low $\mathrm{V}_{\pi}\mathrm{L}_{\pi}$ of 0.37 $\mathrm{V}\cdot \text{cm}$ was experimentally demonstrated.
44-Gb/s Silicon Microring Modulators Based on Zigzag Pn Junctions

Xi Xiao,Xianyao Li,Hao Xu,Yingtao Hu,Kang Xiong,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/lpt.2012.2213244

IF: 2.6

2012-01-01

IEEE Photonics Technology Letters

Abstract:We experimentally demonstrate silicon microring modulators with >40-Gb/s modulation speed based on the carrier-depletion mechanism in reverse-biased PN junctions. A novel zigzag PN junction providing a modulation efficiency of 3.85 x 10(-5)/V and a resistance-capacitance bandwidth of 51 GHz is proposed and demonstrated. The moderate Q factor of similar to 8 000 and the operation wavelength detuning are optimized to relieve photon-lifetime-induced bandwidth limitation. Finally, with a voltage swing of 3 V, high-speed modulation of 20 and 44 Gb/s is experimentally demonstrated with the extinction ratio of 3.45 and 3.01 dB, showing great potential in the application of ultrahigh-capacity optical interconnects.
32-Gb/s OOK and 64-Gb/s PAM-4 Modulation Using a Single-Drive Silicon Mach–Zehnder Modulator with 2 V Drive Voltage

Gangqiang Zhou,Linjie Zhou,Yuyao Guo,Shuhuang Chen,Liangjun Lu,Lei Liu,Jianping Chen

DOI: https://doi.org/10.1109/jphot.2019.2954597

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:We demonstrate a high-efficiency silicon Mach-Zehnder modulator with U-shaped PN junctions. The depletion region of the U-shaped PN junction has a large overlap with the waveguide optical mode, leading to a low drive voltage. The calculated modulation efficiency is 0.33 V center dot cm at 0 V bias and 0.55 V center dot cm at -2 V bias. On-off keying (OOK) modulation and four-level pulse amplitude modulation (PAM-4) are achieved at 32 Gb/s and 64 Gb/s data rates under 2 V drive voltage, respectively. The bit error rate for the PAM-4 modulation is below the hard-decision forward error correction threshold of 3.8 x 10(-3).
High-Speed Silicon Microring Modulator Based on Zigzag Pn Junction

Xi Xiao,Xianyao Li,Hao Xu,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/ipcon.2012.6358589

2012-01-01

Abstract:We present a compact silicon microring modulator with record modulation speed. A novel zigzag PN junction is designed for high efficiency and high bandwidth. 44 Gbit/s NRZ modulation is demonstrated with 3 dB extinction ratio.
Silicon Dual-Series Mach-Zehnder Modulator with High Linearity

Qiang Zhang,Hui Yu,Linghua Wang,Penghui Xia,Qiman Cheng,Zhilei Fu,Xiaofei Wang,Jianyi Yang

DOI: https://doi.org/10.1364/ol.44.005655

IF: 3.6

2019-01-01

Optics Letters

Abstract:In this Letter, we demonstrate a highly linear silicon modulator based on the dual-series Mach-Zehnder modulator (MZM) architecture. The two sub-MZMs are biased at quadrature points of opposite polarities. A proper power-splitting ratio of the driving RF signal on the two sub-MZMs enables the suppression of the third order intermodulation distortion (IMD3). The spurious-free dynamic ranges (SFDRs) for IMD3 are 109.5/100.5 dB.Hz(2/3 )at 1/10 GHz. In contrast, the reference single MZM on the same chip exhibits SFDRs of 95.2/86.8 dB.Hz(2/3) at 1/10 GHz at its optimal reverse bias voltage. (C) 2019 Optical Society of America
A high linear silicon Mach-Zehnder modulator by the dual-series architecture

Qiang Zhang,Hui Yu,Zhilei Fu,Penghui Xia,Xiaofei Wang

DOI: https://doi.org/10.1364/OFC.2020.Th2A.12

2020-01-01

Abstract:We experimentally demonstrate a highly linear dual-series silicon modulator by tuning properly the power splitting ratio of the driving RF signal on the its two sub-MZMs, with SFDR of 109.5/100.5 dB·Hz2/3 at 1/10 GHz.
Silicon Mode-Loop Mach-Zehnder Modulator with L-shaped PN Junction for 0.37 V·cm VπL High-Efficiency Modulation

Jiacheng Liu,Gangqiang Zhou,Jiangbing Du,Weihong Shen,Linjie Zhou,Zuyuan He

DOI: https://doi.org/10.1364/prj.442699

IF: 7.6

2021-01-01

Photonics Research

Abstract:Optical signaling without a high voltage driver for electric-optic modulation is in high demand to reduce power consumption, packaging complexity, and cost. In this work, we propose and experimentally demonstrate a silicon mode-loop Mach–Zehnder modulator (ML-MZM) with record-high modulation efficiency. We used a mode-loop structure to recycle light twice in the phase shifter. With an L-shaped PN junction, a comparably large overlap between the PN junction and optical modes of both TE 0 and TE 1 was achieved to lower the driving voltage or decrease the photonic device size. Proof-of-concept high-efficiency modulation with low V π L of 0.37 V · cm was obtained. Subvoltage V π can be realized with a millimeter’s length phase shifter by this scheme, which makes the realization of CMOS-compatible driverless modulation highly possible. 40 Gb/s signaling with a bit error rate below the 7% forward-error-correction threshold was then demonstrated with the fabricated ML-MZM, indicating great potential for high-speed optical communication.
25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

Xi Xiao,Yingtao Hu,Hao Xu,Xianyao Li,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1117/12.920386

2011-01-01

Abstract:We present a kind of depletion-mode silicon modulators based on cascade interleaved PN junctions, which simultaneously provide high modulation efficiency and large modulation bandwidth. The interfaces of the PN junctions are vertical to the waveguide's propagation direction and tolerant with +/- 150nm junction misalignment on the cost of little degradation on the modulation efficiency. The device was fabricated with standard 0.18 mu m CMOS process, and provides a V pi L pi < 1V.cm and an intrinsic bandwidth 39GHz. Over 10GHz electro-optical modulation bandwidth of the device was experimentally obtained. High speed non-return-zero modulation with a bit rate up to 25Gbit/s was finally demonstrated.
60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1364/ofc.2013.ow4j.3

2013-01-01

Abstract:We present 60 Gbit/s silicon MZI and microring modulators with the PN junctions and electrodes designed for improved modulation efficiency and high speed. WDM modulations of 4×50 Gbit/s have also been demonstrated based on microring modulators.
High-efficiency strip-loaded waveguide based silicon Mach-Zehnder modulator with vertical p-n junction phase shifter

Yuriko Maegami,Guangwei Cong,Morifumi Ohno,Makoto Okano,Kazuto Itoh,Nobuhiko Nishiyama,Shigehisa Arai,Koji Yamada

DOI: https://doi.org/10.1364/OE.25.031407

2017-12-11

Abstract:We demonstrate a silicon Mach-Zehnder modulator (MZM) based on hydrogenated amorphous silicon (a-Si:H) strip-loaded waveguides on a silicon on insulator (SOI) platform, which can be fabricated by using a complementary metal-oxide semiconductor (CMOS) compatible process without half etching of the SOI layer. Constructing a vertical p-n junction in a flat etchless SOI layer provides superior controllability and uniformity of carrier profiles. Moreover, the waveguide structure based on a thin a-Si:H strip line can be fabricated easily and precisely. Thanks to a large overlap between the depletion region and optical field in the SOI layer with a vertical p-n junction, the MZM provides 0.80- to 1.86-Vcm modulation efficiency and a 12.1- to 16.9-dBV loss-efficiency product, besides guaranteeing a 3-dB bandwidth of about 17 GHz and 28-Gbps high-speed operation. The αVπL is considerably lower than that of conventional high-speed modulators.
Highly Efficient Silicon Michelson Interferometer Modulators

Xianyao Li,Xi Xiao,Hao Xu,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/lpt.2013.2238625

IF: 2.6

2013-01-01

IEEE Photonics Technology Letters

Abstract:We present the first high-speed silicon Michelson interferometer (MI) modulator with two 500 μm-long phase shifters. The utilized MI optical structure is an enhanced Mach-Zehnder interferometer (MZI) with both arms incorporated with reflective mirrors. The light in the MI travels back and forth along the phase shifting waveguides and therefore doubles the effective length of light-carrier interaction. Improvement on the modulation efficiency is experimentally demonstrated. Our MI modulator shows high efficiency with a low figure of merit VπLπ of 0.72 V·cm~0.91V·cm under the bias of -1 V~-6V. High-speed modulations are performed at 25 Gbit/s and 30 Gbit/s with the extinction ratio of 8 dB and 6.5 dB, respectively, showing great potential in the future optical interconnects.
Optical modulation and detection based on a PN junction embedded silicon waveguide

Hui Yu,Jianyi Yang,Xiaoqing Jiang

DOI: https://doi.org/10.1109/ICOCN.2013.6617206

2013-01-01

Abstract:A carrier-depletion-based silicon MZ modulator is used for high-speed optical detection by leveraging the defect mediated absorption. As a modulator, the device exhibits a modulation efficiency of VπLπ=1.2 V.cm while as a detector, the responsivity is 22 mA/W at a reverse bias of-7.1 V. An operation speed of 35 Gb/s is obtained for both optical modulation and detection.
A Novel Silicon Forward-Biased PIN Mach–Zehnder Modulator with Two Operating States

Hang Yu,Donghe Tu,Xingrui Huang,Yuxiang Yin,Zhiguo Yu,Huan Guan,Lei Jiang,Zhiyong Li

DOI: https://doi.org/10.3390/mi14081608

IF: 3.4

2023-08-16

Micromachines

Abstract:In this paper, we demonstrate a silicon forward-biased positive intrinsic negative (PIN) Mach–Zehnder modulator (MZM), which has two operating states of high efficiency and high speed. The two operating states are switched by changing the position where the electric signal is loaded. The modulator incorporates a PIN phase shifter integrated with the passive resistance and capacitance (RC) equalizer (PIN-RC), which expands the electro-optic (E-O) bandwidth by equalizing it with modulation efficiency. The fabricated modulator exhibits a low insertion loss of 1.29 dB in two operating states and a compact design with a phase shifter length of 500 μm. The modulation efficiencies are 0.0088 V·cm and 1.43 V·cm, and the corresponding 3 dB E-O bandwidths are 200 MHz and 7 GHz, respectively. The high-speed modulation performance of the modulator is confirmed by non-return-to-zero (NRZ) modulation with a data rate of 15 Gbps without any pre-emphasis or post-processing. The presented modulator shows functional flexibility, low insertion loss, and a compact footprint, and it can be suitable for applications like optical switch arrays and analog signal processing.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Low-power-consumption, high speed Mach-Zehnder silicon optical modulator for CMOS compatible integration

Jianfeng Ding,Hongtao Chen,Lin Yang,Lei Zhang,Ruiqiang Ji,Yonghui Tian,Weiwei Zhu,Yangyang Lu,Ping Zhou,Rui Min

DOI: https://doi.org/10.1109/GROUP4.2012.6324168

2012-01-01

Abstract:We demonstrate a 2-mm-long carrier-depletion modulator which can work at a speed of 40 Gbps under a differential voltage of 0.36 V with no reverse bias. The power efficiency could be 49 fJ/bit.

High-Efficiency Silicon Mach-Zehnder Modulator with U-Shaped PN Junctions

High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

Silicon Mach-Zehnder Modulator Using a Highly-Efficient L-shape PN Junction

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

Second Harmonic Distortion Comparison of Mach-Zehnder Silicon Modulators Based on Lateral and Interdigitated PN Junctions

44Gbit/s Silicon Mach-Zehnder Modulator Based on Interleaved PN Junctions

32-Gb&#x002F;s OOK and 64-Gb&#x002F;s PAM-4 Modulation Using a Single-Drive Silicon Mach&#x2013;Zehnder Modulator with 2 V Drive Voltage

Mode Conversion Based Silicon Mach-Zehnder Modulator with L-shaped PN Junction for 0.37-V.cm Vπ.Lπ High Efficiency Modulation

44-Gb/s Silicon Microring Modulators Based on Zigzag Pn Junctions

32-Gb/s OOK and 64-Gb/s PAM-4 Modulation Using a Single-Drive Silicon Mach–Zehnder Modulator with 2 V Drive Voltage

High-Speed Silicon Microring Modulator Based on Zigzag Pn Junction

Silicon Dual-Series Mach-Zehnder Modulator with High Linearity

A high linear silicon Mach-Zehnder modulator by the dual-series architecture

Silicon Mode-Loop Mach-Zehnder Modulator with L-shaped PN Junction for 0.37 V·cm VπL High-Efficiency Modulation

25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

High-efficiency strip-loaded waveguide based silicon Mach-Zehnder modulator with vertical p-n junction phase shifter

Highly Efficient Silicon Michelson Interferometer Modulators

Optical modulation and detection based on a PN junction embedded silicon waveguide

A Novel Silicon Forward-Biased PIN Mach–Zehnder Modulator with Two Operating States

Low-power-consumption, high speed Mach-Zehnder silicon optical modulator for CMOS compatible integration

32-Gb/s OOK and 64-Gb/s PAM-4 Modulation Using a Single-Drive Silicon Mach–Zehnder Modulator with 2 V Drive Voltage