Abstract:The InGaAs lattice-matched to InP has been widely deployed as the absorption material in short-wavelength infrared photodetection applications such as imaging and optical communications. Here, a series of digital alloy (DA)-grown InAs/GaAs short-period superlattices were investigated to extend the absorption spectral range. The scanning transmission electron microscopy, high-resolution X-ray diffraction, and atomic force microscopy measurements exhibit good material quality, while the photoluminescence (PL) spectra demonstrate a wide band gap tunability for the InGaAs obtained via the DA growth technique. The photoluminescence peak can be effectively shifted from 1690 nm (0.734 eV) for conventional random alloy (RA) InGaAs to 1950 nm (0.636 eV) for 8 monolayer (ML) DA InGaAs at room temperature. The complete set of optical constants of DA InGaAs has been extracted via the ellipsometry technique, showing the absorption coefficients of 398, 831, and 1230 cm–1 at 2 μm for 6, 8, and 10 ML DA InGaAs, respectively. As the period thickness increases for DA InGaAs, a red shift at the absorption edge can be observed. Furthermore, the simulated band structures of DA InGaAs via an environment-dependent tight binding model agree well with the measured photoluminescence peaks, which is advantageous for a physical understanding of band structure engineering via the DA growth technique. These investigations and results pave the way for the future utilization of the DA-grown InAs/GaAs short-period superlattices as a promising absorption material choice to extend the photodetector response beyond the cutoff wavelength of random alloy InGaAs.

GaAs as a bright cryogenic scintillator for the direct dark matter detection

Monte Carlo calculations of cryogenic photodetector readout of scintillating GaAs for dark matter detection

A CsI low temperature detector for dark matter search

How Silicon and Boron Dopants Govern the Cryogenic Scintillation Properties of N-type GaAs

Scintillation characteristics of an undoped CsI crystal at low-temperature for dark matter search

First measurement of Gallium Arsenide as a low-temperature calorimeter

Direct detection of sub-GeV dark matter with scintillating targets

Dark Matter-Electron Scattering Search Using Cryogenic Light Detectors

Challenges for dark matter direct search with SiPMs

Scintillating low-temperature calorimeters for direct dark matter search

First operation of undoped CsI directly coupled with SiPMs at 77 Kelvin

Doped semiconductor devices for sub-MeV dark matter detection

Digital Alloy-Grown InAs/GaAs Short-Period Superlattices with Tunable Band Gaps for Short-Wavelength Infrared Photodetection

GaAsSb: a novel material for near infrared photodetectors on GaAs substrates

Particle discrimination in a NaI crystal using the COSINUS remote TES design

Long-Wavelength InAs/GaSb Superlattice Detectors With Low Dark Current Density Grown by MOCVD

Characterisation of Silicon Photomultipliers for liquid xenon detectors

High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 K

Neutron-gamma discrimination of CsI(Na) crystals for dark matter searches

InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

Wide band spectroscopic response of monocrystallines to low dose neutron and gamma radiation