Abstract:Dopant atoms in semiconductors can be ionized with ∼10 meV energy depositions, allowing for the design of low-threshold detectors. We propose using doped semiconductor targets to search for sub-MeV dark matter scattering or sub-eV dark matter absorption on electrons. Currently unconstrained cross sections could be tested with a 1 g-day exposure in a doped detector with backgrounds at the level of existing pure semiconductor detectors, but improvements would be needed to probe the freeze-in target. We discuss the corresponding technological requirements and lay out a possible detector design. https://doi.org/10.1103/PhysRevD.109.055009 Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Funded by SCOAP 3 . Published by the American Physical Society

What problem does this paper attempt to address?

This paper aims to solve the problem of detecting dark matter (DM) with a mass below mega - electron - volt (MeV). Specifically, the paper proposes a method of using doped semiconductor devices to detect sub - MeV dark matter scattering or sub - electron - volt (eV) dark matter absorption by electrons. Currently, there are many unconstrained cross - section areas for dark matter scattering or absorption below 1 MeV or 1 eV. By introducing shallow impurities (i.e., dopants), the energy threshold of the detector can be significantly reduced, thereby expanding the detection range for low - mass dark matter. ### Main problems and solutions 1. **Problem background**: - At present, most experiments for directly detecting dark matter are based on the interaction between dark matter and standard model particles. These experiments usually look for excited states in materials, but the minimum energy required for the excited states limits the sensitivity of the experiments at low dark matter masses. - For dark matter with a mass below 1 GeV, existing detectors mainly rely on semiconductor targets, where the bandgap is about 1 eV, which makes them sensitive to dark matter scattering or absorption with a mass above 1 MeV or 1 eV. 2. **Innovation points**: - The paper proposes to reduce the energy threshold by adding shallow impurities (dopants) in semiconductors. Shallow impurity atoms can be ionized with an energy deposition of about 10 meV, which allows the design of low - threshold detectors. - The introduction of dopants enables the detector to detect dark matter with a lower mass, especially sub - MeV dark matter scattering and sub - eV dark matter absorption. 3. **Technical requirements**: - The paper discusses the technical requirements needed to achieve this goal and proposes a possible detector design. For example, using a Skipper - CCD detector with a high doping density, which has already demonstrated single - electron - hole pair resolution and an extremely low dark count rate in the SENSEI experiment. - In order to suppress thermally generated dark current, the detector needs to operate at a low temperature (about 5 K). In addition, some background noise problems need to be solved, such as thermally generated dark current, background noise caused by external radiation, etc. ### Specific goals - **Detect sub - MeV dark matter scattering**: Through an exposure of 100 gram - days, it is possible to detect dark matter in the entire currently unconstrained sub - MeV mass region without dark counts, especially dark matter produced by the freeze - out mechanism. - **Detect sub - eV dark matter absorption**: Through an exposure of 1 gram - day, it is possible to detect the currently unconstrained absorption cross - section at the dark count level of existing undoped detectors. ### Conclusion The doped semiconductor detector proposed in the paper has significant discovery potential, especially in detecting low - mass dark matter. By introducing dopants, the energy threshold of the detector can be significantly reduced, thereby expanding the detection range for sub - MeV dark matter scattering and sub - eV dark matter absorption. This method not only takes advantage of existing technologies but also provides a direction for further technological improvement.

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