Implementation of a Low Noise Amplifier with Self-Recovery Capability.

Yanchen Liu,Caizhi Zhang,Tupei Chen,Deyu Kong,Rui Guo,J. J. Wang,Yuancong Wu,S. G. Hu,L. M. Rong,Qi Yu,Yang Liu
DOI: https://doi.org/10.1109/access.2019.2907524
IF: 3.9
2019-01-01
IEEE Access
Abstract:In this paper, an RF low noise amplifier (LNA) with self-recovery capability has been designed and implemented. A degradation model of hot carrier injection (HCI) of n-channel MOSFETs is proposed to simulate the aging process of the RF circuits, and a method for monitoring the HCI degradation in the RF circuits has been developed. Self-recovery mechanism of the LNA is triggered automatically by monitoring the HCI degradation to compensate for the HCI degradation. With the self-recovery capability, the LNA can maintain its performance under HCI stress over time. The proposed LNA has been fabricated with a $0.13\mu m$ CMOS technology and the self-recovery capability has been experimentally demonstrated.
What problem does this paper attempt to address?