Abstract:The junctions formed at the contact between metallic electrodes and semiconductor materials are crucial components of electronic and optoelectronic devices1. Metal–semiconductor junctions are characterized by an energy barrier known as the Schottky barrier, whose height can, in the ideal case, be predicted by the Schottky–Mott rule2–4 on the basis of the relative alignment of energy levels. Such ideal physics has rarely been experimentally realized, however, because of the inevitable chemical disorder and Fermi-level pinning at typical metal–semiconductor interfaces2,5–12. Here we report the creation of van der Waals metal–semiconductor junctions in which atomically flat metal thin films are laminated onto two-dimensional semiconductors without direct chemical bonding, creating an interface that is essentially free from chemical disorder and Fermi-level pinning. The Schottky barrier height, which approaches the Schottky–Mott limit, is dictated by the work function of the metal and is thus highly tunable. By transferring metal films (silver or platinum) with a work function that matches the conduction band or valence band edges of molybdenum sulfide, we achieve transistors with a two-terminal electron mobility at room temperature of 260 centimetres squared per volt per second and a hole mobility of 175 centimetres squared per volt per second. Furthermore, by using asymmetric contact pairs with different work functions, we demonstrate a silver/molybdenum sulfide/platinum photodiode with an open-circuit voltage of 1.02 volts. Our study not only experimentally validates the fundamental limit of ideal metal–semiconductor junctions but also defines a highly efficient and damage-free strategy for metal integration that could be used in high-performance electronics and optoelectronics.

Controlling Injection Barriers for Ambipolar 2D Semiconductors Via Quasi‐van Der Waals Contacts

Suppressing the vdW Gap‐Induced Tunneling Barrier by Constructing Interfacial Covalent Bonds in 2D Metal–Semiconductor Contacts

Graphene‐Enhanced Metal Transfer Printing for Strong van der Waals Contacts between 3D Metals and 2D Semiconductors

Graphene-enhanced van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Dipole-Engineering Strategy for Regulating the Electronic Contact of a Two-Dimensional SbX/Graphene (X = P, As, Bi) Van Der Waals Interface

Tunable Schottky Barrier in Graphene/graphene-Like Germanium Carbide Van Der Waals Heterostructure

All‐van‐der‐Waals Barrier‐Free Contacts for High‐Mobility Transistors

A graphene/Janus B 2 P 6 heterostructure with a controllable Schottky barrier via interlayer distance and electric field

Control of Electron Tunnelling by Fine Band Engineering of Semiconductor Potential Barriers.

Charge Transport Mechanisms of Graphene/Semiconductor Schottky Barriers: A Theoretical and Experimental Study

Controllable Schottky Barriers and Contact Types of BN Intercalation Layer in Graphene/MoSi2As4 vdW Heterostructures via Applying External Electrical Field

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS$_{2}$ transistor

The Role of Permanent and Induced Electrostatic Dipole Moments for Schottky Barriers in Janus MXY/Graphene Heterostructures: a First Principles Study

First-principles Study on Graphene/wsi2n4 Van Der Waals Heterostructure: Tuning the Schottky Barrier

Molecule‐Upgraded van der Waals Contacts for Schottky‐Barrier‐Free Electronics

Modulation of the transport properties of metal/MoS 2 interfaces using BN-graphene lateral tunneling layers.

Electrical Contact Barriers Between 3D Metal and Layered SnS2.

Bridging the gap between atomically thin semiconductors and metal leads

Resolving Interface Barrier Deviation from the Schottky-Mott Rule: A Mitigation Strategy Via Engineering MoS2-Metal Van Der Waals Contact

Two-dimensional Ferromagnet/semiconductor Transition Metal Dichalcogenide Contacts:P-Type Schottky Barrier and Spin-Injection Control