Abstract:AbstractThe integration of III–V and Si multi-junction solar cells as photovoltaic devices has been studied in order to achieve high photovoltaic conversion efficiency. However, large differences in the coefficients of thermal expansion and the lattice parameters of GaAs, Si, and InGaAs have made it difficult to obtain high-efficiency solar cells grown as epilayers on Si and InP substrates. In this paper, two types of devices, including GaInP/GaAs stacked on Si (GaInP/GaAs//Si) and GaInP/GaAs stacked on InGaAs (GaInP/GaAs//InGaAs), are fabricated via mechanical stacking and wire bonding technologies. Mechanically stacked GaInP/GaAs//Si and GaInP/GaAs//InGaAs triple-junction solar cells are prepared via glue bonding. Current-voltage measurements of the two samples are made at room temperature. The short-circuit current densities of the GaInP/GaAs//Si and GaInP/GaAs//InGaAs solar cells are 13.37 and 13.66 mA/cm2, while the open-circuit voltages of these two samples are measured to be 2.71 and 2.52 V, respectively. After bonding the GaInP/GaAs dual-junction with the Si and InGaAs solar cells, the conversion efficiency is relatively improved by 32.6% and 30.9%, respectively, compared to the efficiency of the GaInP/GaAs dual-junction solar cell alone. This study demonstrates the high potential of combining mechanical stacked with wire bonding and ITO films to achieve high conversion efficiency in solar cells with three or more junctions.

The investigation of wafer-bonded multi-junction solar cell grown by MBE

Room-Temperature Wafer Bonded Ingap/Gaas//Ingaasp/Ingaas Four-Junction Solar Cell Grown by All-Solid State Molecular Beam Epitaxy

A Gaas/Gainp Dual Junction Solar Cell Grown by Molecular Beam Epitaxy

RESEARCH ON 400cm2 a-Si/a-Si TANDEM SOLAR CELLS

Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy

Electron Irradiation Study of Room-Temperature Wafer-Bonded Four Junction Solar Cell Grown by Mbe

High-efficiency InP-based Multijunction Solar Cells

Performance comparison of III–V//Si and III–V//InGaAs multi-junction solar cells fabricated by the combination of mechanical stacking and wire bonding

Improved performance of GaAs-based micro-solar cell with novel polyimide/SiO 2 /TiAu/SiO 2 structure

Fabrication of High Voltage GaAs Micro-Solar Cell Arrays

Optical Investigations of Directly Wafer-Bonded InP–GaAs Heterojunctions

Exploration of Lattice-matched Monolithic AlGaInP/AlGaAs/GaInAs/GaInNAs/Ge 5-Junction Solar Cell Grown by MOVPE

The Growth and Fabrication of InGaN/GaN Multi-Quantum Well Solar Cells on Si(111) Substrates

Quantum Efficiency and Temperature Coefficients of Gainp/Gaas Dual-Junction Solar Cell

Strain Balanced Quantum Well Solar Cells Based on AlInGaAsP Material

Investigation of the properties of semiconductor wafer bonding in multijunction solar cells via metal-nanoparticle arrays

Multi-Terminal GaInP/GaInAs/Ge Solar Cells for Subcells Characterization

Carrier Recombination Dynamics of MBE Grown InGaAsP Layers with 1ev Bandgap for Quadruple-Junction Solar Cells

Effects of Zn Diffusion in Tunnel Junction and Its Solution for High Efficiency Large Area Flexible GaInP/GaAs/InGaAs Tandem Solar Cell

Research on Monolithic AlGaInP/AlGaInAs/GaInAs/Ge Quadruple-Junction Solar Cell for High Efficiency Lattice-Matched Tandem Photovoltaic Device