Abstract:Mega-electron-volt (MeV) ultra-fast electron diffraction (UED) and electron microscopy (UEM) have gained more and more interests in recent years. Compared to electron microscopy in 100-300 keV, they have higher penetration power and less space charge effect. On the other hand, they can resolve much higher spatial resolution than X-rays at sub-picosecond timescale. The paper presents development of hybrid pixel detectors dedicated for MeV UED and UEM applications. Diamond (Micron, UK) and silicon (Hamamatsu, Japan) pixel detectors were fabricated and evaluated. According to simulation results, diamond shows much less scattering for MeV electrons and hence could potentially achieve better imaging resolution. Both diamond and silicon detectors have 128 x 128 pixels with pixel size in 150 μm x 150 μm. The thicknesses of the detectors were designed to be 200 μm for diamond and 500 μm for silicon, respectively. The detectors are flip-chip bonded to a readout ASIC (EMPIX2), which has a dynamic range of 24 bit and can operates at 100 kfps frame rate. Fast electron cameras have also been developed based on these detector modules, including TEC and water cooling and the data acquisition (DAQ) system. The bandwidth of the DAQ system was up to 80 Gbps. The cameras were installed in a MeV UED system and the performance of the detectors were evaluated and compared. At low flux, the diamond detector showed less multi-hit events than silicon detector due to scattering. But it also showed some polarization effect. The detailed design and test results of the detector will be present in the paper.

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