Direct synthesis of cubic phase CsPbI3 nanowires

Zhuo Chen,Lvming Dong,Hanchuan Tang,Yan Yu,Lei Ye,Jianfeng Zang
DOI: https://doi.org/10.1039/c8ce02111b
IF: 3.756
2019-01-01
CrystEngComm
Abstract:One-dimensional all-inorganic halide perovskites have emerged as one of the most prominent materials in the application of optoelectronic devices due to their remarkable properties such as a low number of defects, morphological anisotropy, mechanical flexibility and fast charge transfer capability. Particularly, cubic (alpha) phase CsPbI3 has the narrowest band gap of 1.73 eV among all-inorganic lead halide perovskites, exhibiting the greatest potential in solar cell applications. However, the direct synthesis of room temperature stabilized alpha-CsPbI3 nanowires is challenging and remains unfulfilled because the synthesis reaction usually involves a phase change process, resulting in an undesired orthorhombic (delta) phase with a wider bandgap of 2.82 eV. Here, we report a low-temperature approach to directly synthesize highly stabilized alpha-CsPbI3 nanowires. Low reaction temperature, capping ligand protection, and extended growth time are employed to successfully grow alpha-CsPbI3 nanowires. The as-synthesized alpha-CsPbI3 nanowires are 10-20 mu m in length and 5-80 nm in diameter. The X-ray diffraction (XRD), photoluminescence (PL), and UV-vis absorption results verify that these cubic phase nanowires maintain excellent stability at room temperature for 90 days. The CsPbI3 nanowires show a PL peak located at around 685 nm and the UV-vis absorption spectrum further reveals that the band gap is about 1.77 eV. The excellent optical properties of the phase-stable CsPbI3 nanowires offer great potential in the field of optoelectronic devices.
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