Abstract:<p>The study of the properties of two-dimensional (2D) materials and their heterostructures has become one of the mainstream directions of scientific attention. Herein, we systematically survey the structures, electronic properties adjustments of the InSe/antimonene heterostructure under external electric field and mechanical strain by using first principle calculations based on density functional theory. It is found that the AAII–stacking InSe/antimonene heterojunction possesses the maximum indirect-bandgap of 1.452 eV combined by van der Waals interaction among the four stacking orders, and antimonene/InSe heterojunction shows weak orbital hybridization. Moreover, the study of electrical properties shows that the band gap of the AAII–stacking heterojunction decreases linearly with the increase of electric field, and the maximum band gap is 1.461 eV at 0.05 eV/Å/<em>e</em>. The adjustment of electrical properties under mechanical strain is also explored: the band gap of the heterojunction decreases linearly as the absolute value of strain increases, and the maximum band gaps of the InSe/antimonene heterojunction are 1.658 eV and 1.686 eV at –3% uniaxial strain and –2% biaxial strain, respectively. The linear relationship between the band gap and the physical external fields shows great potential in tailoring band gap of the heterojunction, which may further broaden the applications of related 2D materials in electronic devices.</p>

Tuning Electronic Properties of InSe/arsenene Heterostructure by External Electric Field and Uniaxial Strain

Electric Field and Uniaxial Strain Tunable Electronic Properties of the InSb/InSe Heterostructure.

Linear regulation of electrical characteristics of InSe/Antimonene heterojunction via external electric field and strain

Electronic structures and optical properties of arsenene and antimonene under strain and an electric field

Strain-regulated electronic and optical properties of InSe/WS 2 heterostructure from first-principle calculations

Strain-regulated electronic and optical properties of InSe/WS<sub>2</sub> heterostructure from first-principle calculations

The Tunability of Electronic and Transport Properties of InSe/MoSe2 Van Der Waals Heterostructure: A First-Principles Study

Strain-dependent Electronic Structure and Optical Properties of Monolayer Indium Selenide: A Density Functional + Tight-Binding Model + Many-Body Perturbation Theory Study

Electronic Structure and Optical Properties of InSe/α-AsP Van Der Waals Heterostructure from DFT Calculations

Tunable electronic properties and band alignments of InS–arsenene heterostructures via external strain and electric field

Electronic and optical properties of InSe/CuI van der Waals heterostructure with type-II band alignment: Effects of vertical strain and electric field

First-principles study of band alignment and electronic structure of Arsenene/SnS2 heterostructures

Tunable Band Alignment in the Arsenene/WS2 Heterostructure by Applying Electric Field and Strain

Tunable Electronic Properties of Arsenene and Transition-Metal Dichalcogenide Heterostructures: A First-Principles Calculation

Electronic and Transport Properties of InSe/PtTe2 van der Waals Heterostructure

GaTe/CdS heterostructure with tunable electronic properties via external electric field and biaxial strain

Electric Field Modulation of Electronic Structures in InSe and Black Phosphorus Heterostructure

Tailoring the Energy Funneling Across the Interface in InSe/MoS2 Heterostructures by Electrostatic Gating and Strain Engineering

Arsenene/Ca(OH)2 Van Der Waals Heterostructure: Strain Tunable Electronic and Photocatalytic Properties

Calculation of tunable electronic and optical properties of AlP/InSe heterostructure based on first principles

Exploring tunable optoelectronic properties of two-dimensional GaS/PtSSe heterostructures under biaxial strain and external electric field