Strain Effect on Electronic Properties of Arsenene/Graphene Heterostructure

Zhen Luo,Dedong Han,Junchen Dong,Huijin Li,Wen Yu,Yi Liang,Shengdong Zhang,Xing Zhang,Yi Wang
DOI: https://doi.org/10.1109/edssc.2018.8487168
2018-01-01
Abstract:Using density functional theory calculations with van der Waals (vdW) corrections, we investigate the strain effect on electronic properties of arsenene/graphene bilayer heterostructure. It is demonstrated that the transitions from n-type doping to p-type doping of arsenene occurs when the biaxial strain is applied from -10% to 10%, which origins from the vdW interactions between arsenene and graphene. Moreover, the strain can also induce tunable bandgap of arsenene from 0.41 eV to 1.80 eV.
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