Abstract:The correlation between capacitance-voltage hysteresis and accumulation capacitance frequency dispersion of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks is experimentally assessed. Samples fabricated employing forming gas annealing (FGA) or substrate air exposure to obtain different densities of defects were thoroughly characterized and the results were compared with previous literature on the topic. Results indicate a lack of correlation between capacitance-voltage hysteresis and accumulation capacitance dispersion with frequency, suggesting that defects with remarkably different kinetics are involved in each phenomenon. This is assessed through the dependence of the capacitance-voltage hysteresis with DC bias and stress time, observing that permanent interface defect depassivation under bias has no effect on the hysteresis width after stress. Overall, capacitance-voltage hysteresis probes slow trapping mechanisms throughout the oxide and the bandgap, which are consistent with the negative charge trapping characteristic of the current-time curves for FGA samples at constant voltage stress. Instead, accumulation capacitance frequency dispersion probes defects with short trapping/detrapping characteristic times that can be linked to the stress induced leakage current of air exposed samples under constant DC stress. Experimental results indicate that each effect must be assessed separately due to the large difference in the kinetics of the probed defects.

Lack of Correlation Between C-V Hysteresis and Capacitance Frequency Dispersion in Accumulation of Metal Gate/high-K/n-ingaas Metal-Oxide-semiconductor Stacks

Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks.

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

A Model for the Frequency Dispersion of the High-K Metal-Oxide-Semiconductor Capacitance in Accumulation

Investigation of Stress Induced Interface States in Al2o3/Ingaas Metal-Oxide-Semiconductor Capacitors

Capacitance-voltage characteristics of a metal-carbon-silicon structure

The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Interface Studies Of Gaas Metal-Oxide-Semiconductor Structures Using Atomic-Layer-Deposited Hfo2/Al2o3 Nanolaminate Gate Dielectric

Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered With ZnFe2O4 Doped PVA

Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/ β -Ga2O3 metal-oxide-semiconductor capacitors

Bias Temperature Stress Induced Hydrogen Depassivation from Al2O3/InGaAs Interface Defects

Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

Defect Evaluation in InGaAs Field Effect Transistors with HfO2 or Al2O3 Dielectric

Hysteresis With Nonequilibrium Characteristics In Sidegating Effect Of Gaas Devices