Abstract:Copper iodide (CuI) has emerged as a promising p-type semiconductor material owing to its excellent carrier mobility, high transparency, and solution processability. Although CuI has potential for numerous applications, including perovskite solar cells, photovoltaic devices, and thin-film transistors (TFTs), the close relationship between the anion vacancy generation and the charge transport mechanism in CuI-based devices is underexplored. In this study, we propose solution-processed p-type CuI TFTs which were subject to the thermal annealing process in air and vacuum atmospheres at temperatures of 100, 200, and 300 °C. The chemical states and surface morphologies of the CuI thin films were systematically investigated, revealing the generation of iodine vacancy states and the reduction of carrier concentration, as well as increased film density and grain size according to the annealing condition. Further, the effective role of the Al2O3 passivation layer on the electrical characteristics of the solution-processed CuI TFTs is demonstrated for the first time, where the Al2O3 precursor greatly enhanced the electrical performance of the CuI TFTs, exhibiting a field-effect mobility of 4.02 cm2/V·s, a subthreshold swing of 0.61 V/decade, and an on/off current ratio of 1.12 × 104, which exceed the values of CuI TFTs reported so far. Based on the synergistic effects of the annealing process and the passivation layer that engineered the iodine vacancy state and morphology of CuI, the proposed CuI TFTs with the Al2O3 passivation layer showed excellent reliability under 100 times repeated operation and long-term stability over 216 h, where the transfer curves slightly shifted in the positive direction of 1.36 and 1.88 V measured at a current level of 10-6 A for the reliability and stability tests, respectively. Thus, this work opens a new window for solution-processed p-type CuI TFTs with excellent stability for developing next-generation complementary logic circuits.

Simultaneous Optimization of Transmittance and Resistivity for Γ-Cui Thin Films Via an Iodination Method at Mild Reaction Condition

Enhanced Transmittance and Mobility of P-Type Copper Iodide Thin Films Prepared at Room Temperature Via a Layer-by-layer Approach

Highly transparent and conductive p-type CuI films by optimized solid-iodination at room temperature

High-Performance p-Type Transparent Conducting CuI−Cu2O Thin Films with Enhanced Hole Mobility, Surface, and Stability

Fabrication and Properties of Transparent Conductive AZO/Cu Bilayer Films

A New Strategy for Fabricating Low Haze p-Type Cui Film

Insights on stability, transport, and thermoelectric properties of transparent p-type copper iodide thin films

Surface-enhanced p-type transparent conducting CuI−Ga2O3 films with high hole transport performance and stability

Electrodeposition and Optical Properties of Highly Oriented Γ-Cui Thin Films

Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

Highly Conductive p-Type Transparent Conducting Electrode with Sulfur-Doped Copper Iodide

Synthesis of Vacancy-Controlled Copper Iodide Semiconductor for High-Performance p-Type Thin-Film Transistors

Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit

Transparent electric conductive films for optoelectronic devices

High-mobility flexible/transparent p-type copper iodide thin-film transistors and complementary inverters

Improvement of Transparent Conductive Properties of GZO/Cu/GZO Tri-Layer Films by Introducing H2 into Sputtering Atmosphere

Control of Optical Absorption and Emission of Sputtered Copper Iodide Thin Films

Research on CuInS2 Thin Films Prepared by One-step Electrodeposition

Fabrication of transparent p-CuI/n-ZnO heterojunction with excellent ideality factor

Synthesis of Transparent CuI Thin Films by a Facile Low-Cost High Pressure (HP)-PECVD Method at Room Temperature for the Application in Solar Cells

Inorganic P‐type Semiconductors: Engineering Copper Iodide (cui) for Multifunctional P‐type Transparent Semiconductors and Conductors (adv. Sci. 14/2021)