Abstract:Effective surface passivation is one of the primary prerequisites for high-efficiency silicon solar cells. In this paper, high-quality silicon dioxide (SiO2) films with excellent surface passivation abilities have been realized by thermal oxidation and plasma-enhanced chemical vapor deposition, respectively. By employing SiO2 capped with hydrogenated silicon nitride (SiNx:H) (SiO2/SiNx:H stacks) as the front passivation layers, the emitter saturation current density has been reduced from 90.5 fA/cm(2) to 62.3 fA/cm(2). We have successfully mass-produced thermal-oxidized p-type Czochralski-Si (CZ-Si) solar cells with high conversion efficiency (eta) of 20.1%, which is 0.2% absolutely higher than that of the conventional Al back surface field (Al-BSF) solar cells. With a rational design of process integration, we have further presented a cost-effective way to fabricate high-efficiency SiO2 passivated emitter and rear cells (PERCs) at an existing production line. The introduction of SiO2/SiNx:H stacks on the rear surface can effectively increase the long wavelength response and the rear surface recombination is also suppressed with a rather low surface recombination velocity of 26 cm/s achieved after a post-annealing process. The industrial SiO2 passivated p-type CZ-Si PERCs possess outstanding performances with the average eta of 21.3% and the highest eta of over 21.9%, absolute 1.3% increment in average eta compared with the conventional Al-BSF solar cells. Moreover, we have demonstrated that the relative low illumination response (below 50 W/m(2)) loss of our SiO2 PERCs over a day is extremely limited to be less than 0.2%.

Investigation Of Low-Cost And High Efficiency Ga-Doped Cz-Si Solar Cells

RESEARCH ON 400cm2 a-Si/a-Si TANDEM SOLAR CELLS

Ga-doped Czochralski silicon with rear p-type polysilicon passivating contact for high-efficiency p-type solar cells

Investigating the viability of PERC solar cells fabricated on Ga- instead of B-doped monocrystalline silicon wafer

Highly Efficient Silicon Heterojunction Solar Cells with ZnO:Al Transparent Electrode and Transition Metal Doped Indium Oxide Interfacial Layer

STUDY ON SUPPRESSING LIGHT DEGRADATION IN Ga-DOPED HIGH-EFFICIENCY SINGLE CRYSTAL SILICON SOLAR CELL

Ga-doped ZnO rear transparent contact enables high efficiency silicon heterojunction solar cells

A High-Quality Dopant-Free Electron-Selective Passivating Contact Made from Ultra-Low Concentration Water Solution

Improvement of Power Conversion Efficiency of Cu <sub>2</sub>znsn(s,se) <sub>4</sub> Solar Cells by Al Doped CdS

Efficient and bending durable flexible Cu2ZnSn(S,Se)4 solar cells achieved by Ga doping stress regulation

A Novel Dual Functional Gradient Zn(O,S)/Mg Electron-Selective Contact for Dopant‐Free Silicon Solar Cells with Efficiencies Approaching 21%

Application of SiO2 Passivation Technique in Mass Production of Silicon Solar Cells

Towards High-Efficiency Industrial P-Type Mono-Like Si PERC Solar Cells

Solution‐processed PEDOT:PSS/p‐Si/ZnO heterojunction solar cells

Efficient Silicon Solar Cells with Aluminum‐Doped Zinc Oxide‐Based Passivating Contact

CdS(In)/CZTSSe bandgap alignment engineering for performance enhancement of solar cells without ZnO layer

Heterojunction Reconstruction Via in Doping Towards High-Efficiency CZTSSe Solar Cells

Interfacial engineering of ZnS passivating contacts for crystalline silicon solar cells achieving 20% efficiency

Doping Behavior of Zn in CdS and Its Effect on the Power Conversion Efficiency of the Cu2ZnSn(S, Se)4 Solar Cell

High Efficiency Amorphous Silicon Germanium Solar Cells

N‐Type Surface Design for p‐Type CZTSSe Thin Film to Attain High Efficiency