High Efficiency Amorphous Silicon Germanium Solar Cells

X Liao,W Du,X Yang,H Povolny,X Xiang,X Deng
DOI: https://doi.org/10.1109/pvsc.2005.1488413
2005-01-01
Abstract:We report high-efficiency single-junction a-SiGe n-i-p solar cells deposited using rf PECVD on stainless steel (SS) substrates coated with metal/ZnO back-reflector (BR). The initial and stabilized active-area efficiencies have been improved to 12.5-13.0% and 10.4%, respectively, for 0.25 cm/sup 2/ a-SiGe cells. The achievement of single-junction cells with such high efficiencies, equivalent to those for the state-of-the-art triple-junction solar cells, are important since this would lead to significant cost reduction in manufacturing. The key factors leading to these high efficiencies include the use of: 1) an optimized GeH/sub 4/ to Si/sub 2/H/sub 6/ ratio leading to a Ge content ideal for high-efficiency single-junction a-SiGe cell, 2) an optimized level of hydrogen dilution for the i-layer, and, most importantly, 3) a hybrid p-layer with the sub-layer near a-SiGe i-layer deposited at high temperature (140 /spl deg/C) and the bulk of the p-layer deposited at low temperature (70 /spl deg/C) for better transparency.
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