Detailed Modeling Recombination In Pid-Affected N-Type Monocrystalline Silicon Solar Module

Pan Zhao,Xiaobao Ju,Xiaoli Cheng,Chuanke Chen,He Wang,Hong Yang,Hongtao Li,Yinghua Dong
DOI: https://doi.org/10.1109/pvsc.2018.8548221
2018-01-01
Abstract:In this paper, the double-diode equivalent model of solar cell is used to analyze the recombination occurring in p-type mono-crystalline silicon solar module affected by potentialinduced degradation (PID). By comparison with the measured data and EL images, it reveals that more recombination current (I-d2) is generated in solar module undergoing PID stress. The variation of I-d2/I-d1 shows that recombination current plays a main role in output current of solar module under low voltage. What's worse, the value of I-d2/I-d1 becomes larger after PID stress. These results indicate that the p-n junction may be destroyed by PID.
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