Abstract:Potential‐induced degradation‐polarization (PID‐p) can reduce module power, but how to project the extent to which PID‐p may occur in field conditions considering the factors of system voltage, condensed moisture, temperature, and illumination has not been clarified. Using tunnel oxide passivated contact (TOPCon) modules, this work demonstrates a method to test full‐size crystalline silicon PV modules for PID‐p to provide field‐representative results. In initial screening tests with positive or negative 1000 V electrical bias applied at 60°C for 96 h using Al foil electrodes on the glass surfaces, the module type exhibited reversible PID‐p only on the front face when the cell circuit was in negative voltage potential. No PID was detected on the rear after testing in either polarity. We then evaluated the PID‐p sensitivity on the front side under different UV irradiances while maintaining the glass surface wet to estimate real‐world susceptibility to PID‐p. The magnitude of the observed behavior was fit using a previously developed charge transfer and depletion by light model. Whereas power loss with −1000 V applied to the cell circuit at 60°C for 96 h in the dark was about 30%, testing the module front under 0.051 W·m−2 nm−1 at 340 nm UVA irradiation using fluorescent tubes, the mean degradation was only 3%. When the modules were tested in the dark for PID‐p with in situ dark current–voltage (I‐V) characterization, the thermal activation energy for degradation was 0.71 eV; for recovery in the dark, it was 0.58 eV. Whereas recovery from the degraded state at 60°C in the dark without voltage bias was 5% absolute in 38 h, rapid recovery of about 5% absolute was observed with 1000 W·s/m2 exposure at 25°C using a flash tester.

Different Recombination In Pid-Affected Solar Modules From The Field

Detailed Modeling Recombination In Pid-Affected N-Type Monocrystalline Silicon Solar Module

Potential-induced Degradation: Recombination Behavior, Temperature Coefficients and Mismatch Losses in Crystalline Silicon Photovoltaic Power Plant

Analysis Of Junction Recombination Of P-Type Single Crystalline Silicon Solar Modules Affected By Potential Induced Degradation Under Non-Stc

Performance Variation of Dark Current Density-Voltage Characteristics for PID-affected Monocrystalline Silicon Solar Modules from the Field.

Investigation of Efficiency for PID-Affected Solar Module at Nonstandard Test Conditions

Comparative Study on Reverse Current for PID-Affected and PID-Free Crystalline Silicon Solar Module

Effect of Potential Induced Degradation on Crystalline Silicon Solar Modules in Photovoltaic Power Plant

Investigation on Potential-Induced Degradation in a 50mwp Crystalline Silicon Photovoltaic Power Plant

Recombination Behaviour of Passivated Emitter and Rear Cell (PERC) Bifacial Silicon Solar Module under Different Illuminations

Regular and Irregular Performance Variation of Module String and Occurred Conditions for Potential Induced Degradation-Affected Crystalline Silicon Photovoltaic Power Plants

Thermal Characteristics of Pid-Affected Monocrystalline Silicon Solar Modules under Illuminated and Dark Conditions

The Real Situation of Potential-Induced Degradation in Multicrystalline Silicon Photovoltaic Power Plant

Relationship Between Power Loss and Voltage Applied to Solar Cells in Pid-Affected Solar Modules

Field‐representative evaluation of PID‐polarization in TOPCon PV modules by accelerated stress testing

Characterization of rear-side potential-induced degradation in bifacial p-PERC solar modules

Method to Study PID of Perovskite Solar Cells and Modules in an Inert Environment

Mechanism Analysis of Potential-Induced Degradation of P-type Crystalline Si Solar Cells

Impact of partial shading on the performance and reliability of potential-induced degraded crystalline silicon PV module

Diffusion and Drift of Sodium Ions in PID-affected Mono-Crystalline Silicon Solar Modules

Similarity of potential-induced degradation in superstrate-type thin-film CdTe and Si photovoltaic modules