Abstract:Cu(In,Ga)Se<sub>2</sub> (CIGS) solar cells attract intense interest both in research and industry fields due to their high power conversion efficiencies, low costs, and high stabilities. The power conversion efficiency of a CIGS solar cell is limited by the deep level defects distributed on the surface and in the bulk of the CIGS solar cells. In this work, we elucidate that the deep level defects are significantly suppressed during the CdS buffer layer deposition process via a chemical bath deposition (CBD) method. The X-ray photoelectron spectroscopy results show the incorporation of cadmium (Cd) into CIGS during the CdS deposition process, which is the main reason for the reduced deep level nonradiative recombination defects. Raman spectroscopy and secondary ion mass spectroscopy further reveal the reduction of nonradiative recombination deep level defects due to Cd incorporation. Besides, the high-resistivity i-ZnO layer provides field-effect passivation, leading to the enhancement of the power conversion efficiency from 11.0 to 12.1%. By a combination of the incorporation of Cd, i-ZnO passivation, and optimization of the band gap of CIGS, the champion power conversion efficiency of the CIGS solar cell is as high as 15.5% without an antireflective layer and alkali metal postdeposition treatment. Our results provide insights into the effect of the CdS buffer layer, CBD method, and high-resistivity i-ZnO layer on the performance of CIGS solar cells, which is quite helpful to further improve the power conversion efficiency of CIGS solar cells.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.0c01930?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.0c01930</a>.CIGS coevaporation deposition process; CdS CBD deposition; characterizations; top-view SEM images of CdS deposited via chemical bath deposition for different times; XRD pattern of CdS fabricated via a CBD method at 80 °C for 12 min; parameters for the simulations of the performance of CIGS solar cells with different thicknesses of i-ZnO; and EQE curves of CIGS solar cell obtained at 0, 0.5, −0.5, and 1 V DC voltage bias (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.0c01930/suppl_file/ae0c01930_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Enhanced Efficiency of Cu(In,Ga)Se 2 Solar Cells With a Thin CdS Buffer Layer Via a Zn 0.8 Mg 0.2 O Second Buffer Layer

High-Efficiency Cu(In,Ga)Se₂ Thin Film Solar Cells Using ZnS and CdS Buffer Layers

Cu(In,Ga)Se2 Solar Cells with Double Layered Buffers Grown by Chemical Bath Deposition

Improvement of the Electrical Properties of a Cu(In,Ga)Se₂ Solar Cell Based on a ZnS Buffer Layer from Radio Frequency Magnetron Sputtering

Improvement of the CIGS solar cell performance: structure based on a ZnS buffer layer

Fabrication of High-Quality Zns Buffer and Its Application in Cd-Free Cigs Solar Cells

Efficiency Enhancement of CIGS Solar Cells via Recombination Passivation

Optimal CdS Buffer Thickness to Form High-Quality CdS/Cu(In,Ga)Se 2 Junctions in Solar Cells without Plasma Damage and Shunt Paths.

High efficiency wide gap Cu(In,Ga)Se2 solar cells: Influence of buffer layer characteristics

Atomic-Scale Interface Modification Improves the Performance of Cu(In1- xGax)Se2/Zn(O,S) Heterojunction Solar Cells

A Cd-reduced Hybrid Buffer Layer of CdS/Zn(O,S) for Environmentally Friendly CIGS Solar Cells

Optical Properties of Cd1−xZnxS Thin Films for CuInGaSe2 Solar Cell Application

A Sputtered CdS Buffer Layer for Co-Electrodeposited Cu2ZnSnS4 Solar Cells with 6.6% Efficiency.

Boost the efficiency of Cu2ZnSn(S,Se)4 solar cell by using Mn2+ induced ultra‐thin CdS buffer layer

Optimizing the Thickness of Sputtering-Zn(o, S) Buffer Layer for All-Dry Cd-free CIGS Solar Cells

Enhancement of Cd-Free All-Dry-Processed Cu(In1-x,Gax)Se2 Thin-Film Solar Cells by Simultaneous Adoption of an Enlarged Bandgap Absorber and Tunable Bandgap Zn1-xMgxO Buffer

Boosting Electron Transport and Reducing Open-Circuit Voltage Deficit of CIGS Solar Cells with Zn1−xMgxO Buffer Layer

Thin oxide buffer layers for avoiding leaks in CIGS solar cells; a theoretical analysis

Promising Cd-free double buffer layer in CZTSSe thin film solar cells

Influence of Mg concentration in Zn1-Mg O buffer layers for enhanced Cu2(Sn,Ge)S3 solar cells performance

Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe 2 solar cell