A Cd-reduced Hybrid Buffer Layer of CdS/Zn(O,S) for Environmentally Friendly CIGS Solar Cells

Tanka Raj Rana,SeongYeon Kim,JunHo Kim,Kihwan Kim,Jae Ho Yun

DOI: https://doi.org/10.1039/c7se00348j

IF: 6.813

2017-01-01

Sustainable Energy & Fuels

Abstract:For the fabrication of high efficiency Cu(In,Ga)Se2 (CIGS) solar cells, a Cd-reduced hybrid CdS/Zn(O,S) is used as the buffer layer.

What problem does this paper attempt to address?

High-Efficiency Cu(In,Ga)Se₂ Thin Film Solar Cells Using ZnS and CdS Buffer Layers

Byoung-Min Jun,Geunho Kim,Eundo Kim,Heecheol Kim,Dong Ju Lee,Han-Sang Kim,Seong Gon Choi,Fei Shan,Sung-Jin Kim

DOI: https://doi.org/10.1166/jnn.2019.16218

2019-03-01

Abstract:Most of the existing copper indium gallium diselenide (CIGS) thin film solar cells are based on a cadmium sulfide (CdS) buffer layer fabricated using a chemical bath deposition (CBD) process. However, due to environmental pollution caused by material toxicity and the unique wet process's incompatibility with the vacuum process, many studies are now being actively carried out on nontoxic buffer layers. In this study, to replace CdS buffer layers, zinc sulfide (ZnS) buffer layers with a big band gap and a low optical loss at a short wavelength were fabricated using a magnetron sputtering system. For comparative analysis, this study also fabricated CdS buffer layers using the CBD process. Then, the conversion efficiency of CIGS thin film solar cells deposited with ZnS and CdS thin film as buffer layers was measured. The light conversion efficiency of ZnS buffer layer-based CIGS was measured at 14.44%, while that of the CdS buffer layer-based CIGS was measured at 15.71%. Given that both are higher than the minimum conversion efficiency required for commercialization (10%), ZnS buffer layer-based solar cells could have a competitive edge over the existing CdS buffer layer-based solar cells.
Heterojunction Interface Passivation Strategy for Cu(In1-x,Gax)Se2 Solar Cell with Nano-Level Engineering of Zn-based Buffer Structure Via Atomic Layer Deposition Method

Sang Su Shin,Kihwan Kim,Jinsu Yoo,Ji Hye Kim,Seungkyu Ahn,Ara Cho,Dongryeol Kim,Yonghee Jo,Inyoung Jeong,Donghyeop Shin,Jun-Sik Cho,Jae Ho Yun,Jonghoo Park,Joo Hyung Park

DOI: https://doi.org/10.1016/j.solmat.2021.111010

IF: 6.9

2021-01-01

Solar Energy Materials and Solar Cells

Abstract:The global needs for ecological friendliness and sustainable development in the photovoltaic (PV) market have led to an increased demand to fabricate solar cells in an environmentally sound manner using nontoxic elements. In response to these requirements, in chalcogenide solar cell technology, researchers are attempting to replace the conventional CdS buffer. A potential replacement buffer material is ZnOS due to its direct, large, and tunable bandgap. Atomic layer deposition (ALD) can be effectively used to deposit ZnOS on Cu(In1-x,Ga-x)Se-2 (CIGSe) absorbers, as this process allows the highly controlled thickness and composition, conformal coverage, inline compatibility, and relatively easier maintenance. However, CIGSe solar cells with an ALD grown ZnOS buffer usually suffer from the deficit of open circuit voltage (V-oc), which limits power conversion efficiency (PCE). To overcome the limitation, ZnOS buffer structure with ZnS nanolayer is engineered for heterojunction interface passivation (HIP) and the role of ZnS nanolayer is investigated. The insertion of the ZnS nanolayer between ZnOS and CIGSe exhibits passivation effects at the heterojunction interface, thereby to enhance the solar cell performance owing to the realization of a more refined bandgap structure. Wide bandgap ZnS passivation thus demonstrates considerable potentials for being applied in other material systems.
Enhancement of Cd-Free All-Dry-Processed Cu(In1-x,Gax)Se2 Thin-Film Solar Cells by Simultaneous Adoption of an Enlarged Bandgap Absorber and Tunable Bandgap Zn1-xMgxO Buffer

Joo Hyung Park,Yonghee Jo,Ara Cho,Inyoung Jeong,Jin Gi An,Kihwan Kim,Seung Kyu Ahn,Donghyeop Shin,Jun-Sik Cho

DOI: https://doi.org/10.1002/eem2.12796

IF: 15

2024-01-01

Energy & Environmental Materials

Abstract:Attempts to remove environmentally harmful materials in mass production industries are always a major issue and draw attention if the substitution guarantees a chance to lower fabrication cost and to improve device performance, as in a wide bandgap Zn1-xMgxO (ZMO) to replace the CdS buffer in Cu(In1-x,Ga-x)Se-2 (CIGSe) thin-film solar cell structure. ZMO is one of the candidates for the buffer material in CIGSe thin-film solar cells with a wide and controllable bandgap depending on the Mg content, which can be helpful in attaining a suitable conduction band offset. Hence, compared to the fixed and limited bandgap of a CdS buffer, a ZMO buffer may provide advantages in V-oc and J(sc) based on its controllable and wide bandgap, even with a relatively wider bandgap CIGSe thin-film solar cell. In addition, to solve problems with the defect sites at the ZMO/CIGSe junction interface, a few-nanometer ZnS layer is employed for heterojunction interface passivation, forming a ZMO/ZnS buffer structure by atomic layer deposition (ALD). Finally, a Cd-free all-dry-processed CIGSe solar cell with a wider bandgap (1.25 eV) and ALD-grown buffer structure exhibited the best power conversion efficiency of 19.1%, which exhibited a higher performance than the CdS counterpart.
Optimal CdS Buffer Thickness to Form High-Quality CdS/Cu(In,Ga)Se 2 Junctions in Solar Cells without Plasma Damage and Shunt Paths.

Kyung Soo Cho,Jiseong Jang,Jeung-Hun Park,Doh-Kwon Lee,Soomin Song,Kihwan Kim,Young-Joo Eo,Jae Ho Yun,Jihye Gwak,Choong-Heui Chung

DOI: https://doi.org/10.1021/acsomega.0c03268

IF: 4.1

2020-01-01

ACS Omega

Abstract:CdS has been known to be one of the best junction partners for Cu(In,Ga)Se-2 (CIGS) in CIGS solar cells. However, the use of thick CdS buffer decreases the short-circuit current density of CIGS solar cells. There are two obstacles that limit the use of ultrathin CdS. The first is plasma damage to CIGS during the preparation of transparent conducting windows and the second is a low shunt resistance due to the direct contact between the window and CIGS via pinholes in the thin CdS buffer. In other words, to avoid plasma damage and shunt paths, we may have to use a CdS buffer that is thicker than necessary to form a high-quality CdS/CIGS junction. This work aims to determine how thin the CdS buffer can be employed without sacrificing device performance while also eliminating the above two obstacles. We investigate the effect of CdS thickness on the performance of CIGS solar cells with silver nanowire-based window layers, which can eliminate both obstacles. An approximately 13 nm thick CdS buffer allows us to achieve high short-circuit current density and fill factor values. To attain an even high open-circuit voltage, an additional CdS buffer with a thickness of 13 nm is needed. The data from this study imply that an approximately 26 nm thick CdS buffer is sufficient to form a high-quality CdS/CIGS junction.
Cu(In,Ga)Se2 Solar Cells with Double Layered Buffers Grown by Chemical Bath Deposition

Z. Q. Li,J. H. Shi,D. W. Zhang,Q. Q. Liu,Z. Sun,Y. W. Chen,Z. Yang,S. M. Huang

DOI: https://doi.org/10.1016/j.tsf.2011.06.100

IF: 2.1

2011-01-01

Thin Solid Films

Abstract:In based mixture Inx(OH,S)y buffer layers deposited by chemical bath deposition technique are a viable alternative to the traditional cadmium sulfide buffer layer in thin film solar cells. We report on the results of manipulating the absorber/buffer interface between the chalcopyrite Cu(In,Ga)Se2 (CIGS) absorber and CdS or ZnS buffer by addition of a thin In based mixture layer. It is shown that the presence of thin Inx(OH,S)y at the CIGS absorber/CdS or ZnS buffer interfaces greatly improve the solar cell performances. The performances of CIGS cells using dual buffer layers composed of Inx(OH,S)y/CdS or Inx(OH,S)y/ZnS increased by 22.4% and 51.6%, as compared to the single and standard CdS or ZnS buffered cells, respectively.
Improvement of the Electrical Properties of a Cu(In,Ga)Se₂ Solar Cell Based on a ZnS Buffer Layer from Radio Frequency Magnetron Sputtering

Han-Sang Kim,Geunho Kim,Eundo Kim,Seong Jin Cho,Dong Ju Lee,Seong Gon Choi,Fei Shan,Sung-Jin Kim

DOI: https://doi.org/10.1166/jnn.2019.16255

2019-03-01

Abstract:We fabricated zinc sulfide (ZnS) buffer layers with a great band gap and small light loss at a short wavelength, and then applied them to copper indium gallium sulphur-selenide (CIGS) thin film solar cells. A CIGS evaporation system was used for fabrication of the CIGS thin films, and a thickness monitor was used to check the evaporation rate at each source. The evaporation rate and deposition time were adjusted to change the composition ratio of the thin films. Also, CIGS thin films were deposited by changing the temperature of the substrates from room temperature (RT) to 150 °C, 250 °C, and 350 °C during ZnS deposition, and among them, the optimal substrate temperature was selected to measure the light conversion efficiency of ZnS-deposited CIGS thin film solar cells. The grown ZnS thin films were analyzed for crystallinity and composition by using X-ray diffraction, and by using a scanning electron microscope, the cross section and surface shape of the thin films were examined. When we applied the ZnS thin film that was fabricated at a temperature of 150 °C with a thickness of 50 nm as a buffer layer for the CIGS solar cells, we obtained a light conversion efficiency of 14.48% without an antireflection layer.
Zinc Chloride‐treated Indium Sulfide as Buffer Layer for Cd‐free Antimony Selenide Solar Cells

Yizhe Dong,Lei Huang,Haolin Wang,Xiaoqi Peng,Yan Wang,Rongfeng Tang,Changfei Zhu,Tao Chen

DOI: https://doi.org/10.1002/solr.202300440

IF: 9.1726

2023-07-11

Solar RRL

Abstract:In2S3, as a promising environmentally benign semiconductor, has been used as a buffer layer in thin film solar cells due to its high electron mobility, low toxcity, excellent thermal and chemical stability. The preparation of high‐quality In2S3 film is crucial for the improvement of its carrier extraction ability and subsequent deposition of absorber layers. Here, we demonstrate for the first time a post‐treatment of In2S3 film with ZnCl2 solution is able to serve as buffer layer for constructing superstrate Sb2Se3 solar cells. The post‐treatment with ZnCl2 not only prevents In2S3 from excessive oxidation during annealing process, but facilitates the growth of (hk1) orientation of Sb2Se3, thereby improving the interfacial contact of In2S3/Sb2Se3. The improved heterojunction quality suppressed the carrier recombination at the interface, and enhanced the charge extraction ability of In2S3. As a result, the power conversion efficiency of Sb2Se3 solar cell increased from 2.63% to 5.00%. This study provides a facile and effective strategy for the application of In2S3 as the buffer layer in inorganic chalcogenide solar cells. This article is protected by copyright. All rights reserved.

energy & fuels,materials science, multidisciplinary
Sputtering Deposited and Energy Band Matched ZnSnN2 Buffer Layers for Highly Efficient Cd‐Free Cu2ZnSnS4 Solar Cells

Fan Ye,Cangshuang He,Tong Wu,Shuo Chen,Zhenghua Su,Xianghua Zhang,Xingmin Cai,Guangxing Liang

DOI: https://doi.org/10.1002/adfm.202402762

IF: 19

2024-06-02

Advanced Functional Materials

Abstract:Sputtering deposition of ZnSnN2 induces no detrimental effect on the photovoltaic properties of Cu2ZnSnS4\ZnSnN2 solar cells. The energy band of ZnSnN2 straddles that of Cu2ZnSnS4 with a positive conduction band offset near the optimal value. The champion photoelectric conversion efficiency of 10% is obtained. Kesterite Cu2ZnSnS4 (CZTS) solar cells with CdS buffer layers have the problem of toxicity and cliff‐like energy band diagram disfavoring higher photoelectric conversion efficiency (PCE (%)). The preparation method for ZnSnO buffer layers which enable Cd‐free CZTS solar cells to reach the certified PCE (%) of 11.4 is limited to atomic layer deposition and sputtering deposition severely reduces PCE (%). Here, it is showed that sputtering deposited ZnSnN2 is an efficient buffer layer for Cd‐free CZTS solar cell, and without antireflection coating or additional passivation layers its champion PCE (%) has reached 10.00 which is comparable to the certified value. No buried junction and current blocking behavior are observed in the CZTS\ZnSnN2 junctions. Elemental inter‐diffusion is observed at the interface between CZTS and ZnSnN2. Most importantly, the energy band of ZnSnN2 is well‐matched with that of CZTS. The former straddles the latter. The conduction band offset is spike‐like with the conduction band of ZnSnN2 higher than that of CZTS, which effectively suppresses interface recombination and results in PCE (%) comparable to the certified value.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Realizing zinc-doping of CdS buffer layer via partial electrolyte treatment to improve the efficiency of Cu2ZnSnS4 solar cells

Youchen Gu,Chen Ye,Xuewen Yin,Jianhua Han,Yu Zhou,Heping Shen,Jianbao Li,Xiaojing Hao,Hong Lin

DOI: https://doi.org/10.1016/j.cej.2018.06.134

IF: 15.1

2018-01-01

Chemical Engineering Journal

Abstract:Cadmium sulfide (CdS) is the most widely used buffer material for a variety of thin-film solar cells including Cu2ZnSnS4. However, reports have shown that CdS film obtained by chemical bath deposition (CBD) is not the ideal buffer layer for pure sulfide CZTS solar cell. Zinc doping is a viable approach to modifying the CdS buffer film, but the present methods are far from satisfactory. Here, we innovatively developed an effective way of Zinc doping using partial electrolyte (PE) treatment, resulting in state-of-the-art buffer layer for solar cells based on high-surface-waviness CZTS light absorber. Our study shows that this Zn PE-treated CdS film improved the properties including coverage, full-range light transmittance and conduction band alignment with CZTS. Ultimately, the resultant modified CdS film boosted the open-circuit voltage of our devices by more than 100 mV, yielding power conversion efficiency (PCE) of 3.30%. We note that this is the highest efficiency that has been reported for all solution-processed CZTS solar cells.
Study on the Performance of Oxygen-Rich Zn(O,S) Buffers Fabricated by Sputtering Deposition and Zn(O,S)/Cu(In,Ga)(S,Se) 2 Interfaces

Yuxian Li,Daming Zhuang,Ming Zhao,Chen Wang,Hao Tong,Liangzheng Dong,Shengye Tao,Hanpeng Wang

DOI: https://doi.org/10.1021/acsami.2c04919

IF: 9.5

2022-05-17

ACS Applied Materials & Interfaces

Abstract:We developed a novel process for fabricating oxygen-rich Zn(O,S) buffer layers by magnetron reactive sputtering with a single oxygen-rich Zn(O,S) target, suitable for industrial all-dry production. Then, we successfully fabricated Cd-free Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells. By varying the oxygen partial pressure during sputtering from 0 to 20%, we precisely controlled the Zn(O,S) composition, then systematically investigated its effects on the quality of oxygen-rich Zn(O,S) films, the properties of formed p-n junctions, and the performance of CIGSSe solar cells with Zn(O,S) buffer. We demonstrated that reactive sputtering with a Zn(O,S) target can generate a homogeneous, high-quality oxygen-rich Zn(O,S) buffer on large-area substrates. We observed a unique and unusual phenomenon: the appropriate content of secondary phase ZnSO4 and ZnSO3 improved the band alignment for oxygen-rich Zn(O,S). Combining our proposed schematic diagram of band alignmentat the Zn(O,S)/CIGSSe interface, we established a crucial correlation between the device performance and the interfacial properties at the p-n junction. For the CIGSSe device performance, the band alignment matching at the heterojunction plays a primary role, and the quality of oxygen-rich Zn(O,S) films plays a secondary role. Consequently, an excellent oxygen-rich Zn(O,S) buffer can be obtained with 10% Zn(O,S) deposition oxygen partial pressure , and the optimized device shows a higher Voc (447 mV) and a similar conversion efficiency (11.2%) than conventional CIGSSe devices with CdS buffer.

materials science, multidisciplinary,nanoscience & nanotechnology
Influence of Deposition Parameters on Performance of Zn(O,S) Buffer Layer Deposited by Solution-Based Continuous Flow Reactor for CIGS Solar Cells

Sang Ouk Ryu,Ho Young Jun

DOI: https://doi.org/10.1166/jno.2024.3578

2024-03-01

Journal of Nanoelectronics and Optoelectronics

Abstract:CdS thin films are commonly used as buffer layers in hetero-junction structured CIGS thin film solar cells. However, the toxicity of Cd has raised concerns regarding environmental safety and alternative materials have been explored. ZnS is a leading candidate to replace Cd, with the presence of Zn(O,S) impurities known to be required for efficient CIGS solar cell fabrication. In this study, we synthesized Zn(O,S) films using a solution-based deposition method combining a continuous flow reactor (CFR) with another solutionbased deposition method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to characterize the structural and physicochemical properties of the films, confirming the efficacy of the CFR process for depositing Zn(O,S) thin films in a short period of time. We successfully deposited Zn(O,S) thin films using the combined CFR process. Cd-free B:ZnO/Zn(O,S)/CIGS solar cells were fabricated on Mo-coated glass substrates to investigate the effects of experimental parameters, such as deposition time and method, on the performance of the Zn(O,S) buffer layer in the devices.

engineering, electrical & electronic,nanoscience & nanotechnology,physics, applied
Improvement of the CIGS solar cell performance: structure based on a ZnS buffer layer

Souad Tobbeche,Salim Kalache,Mourad Elbar,Mohamed Nadjib Kateb,Mohamed Redha Serdouk

DOI: https://doi.org/10.1007/s11082-019-2000-z

IF: 3

2019-08-01

Optical and Quantum Electronics

Abstract:Cu(In,Ga)Se2 (CIGS) based thin film solar cells are the most efficient thin-film solar cells today. The non-toxic and wide band-gap zinc sulphide (ZnS) is a promising material to replace the cadmium sulfide (CdS) as the buffer layer in CIGS based solar cells. In this work we present a simulation study of a CIGS based solar cell with a buffer layer of ZnS, using the simulator Silvaco-Atlas. Our primary simulation shows a 22.6% efficiency of the CIGS solar cell with the CdS buffer layer which is comparable to reported and highest experimental results. However, the simulated efficiency of the CIGS solar cell with the ZnS buffer layer as high as 23.54% was achieved. The effects of layer parameters like the thickness, the acceptor and donor densities of the CIGS absorber and ZnS buffer layers and the CBO on the photovoltaic parameters of the ZnS/CIGS solar cell are optimized in order to improve the performance of the ZnS/CIGS solar cell. The highest efficiency of 27.33% is achieved when the ZnS buffer and the CIGS absorber layers have thicknesses of 0.025 µm and 4 µm with acceptor and donor densities of 6 × 1017 cm−3 and 1018 cm−3, respectively and a CBO in the range − 0.05 to 0.05 eV. The present results of simulation can help the development of the solar cells with higher conversion efficiency and low cost.

engineering, electrical & electronic,optics,quantum science & technology
Atomic-Scale Interface Modification Improves the Performance of Cu(In1- xGax)Se2/Zn(O,S) Heterojunction Solar Cells

Khalil El Hajraoui,Diego Colombara,José Virtuoso,Rolf Waechter,Francis Leonard Deepak,Sascha Sadewasser

DOI: https://doi.org/10.1021/acsami.1c10251

2021-09-22

Abstract:Cadmium-free buffer layers deposited by a dry vacuum process are mandatory for low-cost and environmentally friendly Cu(In1-xGax)Se2 (CIGS) photovoltaic in-line production. Zn(O,S) has been identified as an alternative to the chemical bath deposited CdS buffer layer, providing comparable power conversion efficiencies. Recently, a significant efficiency enhancement has been reported for sputtered Zn(O,S) buffers after an annealing treatment of the complete solar cell stack; the enhancement was attributed to interdiffusion at the CIGS/Zn(O,S) interface, resulting in wide-gap ZnSO4 islands formation and reduced interface defects. Here, we exclude interdiffusion or island formation at the absorber/buffer interface after annealing up to 200 °C using high-resolution scanning transmission electron microscopy (HR-STEM) and energy-dispersive X-ray spectroscopy (EDX). Interestingly, HR-STEM imaging reveals an epitaxial relationship between a part of the Zn(O,S) buffer layer grains and the CIGS grains induced by annealing at such a low temperature. This alteration of the CIGS/buffer interface is expected to lead to a lower density of interface defects, and could explain the efficiency enhancement observed upon annealing the solar cell stack, although other causes cannot be excluded.
Interface Engineering for High-Efficiency Solution-Processed Cu(In,Ga)(S,Se)2 Solar Cells via a Novel Indium-Doped CdS Strategy

Qianqian Chang,Shengjie Yuan,Junjie Fu,Qianqian Gao,Yunhai Zhao,Zhen Xu,Dongxing Kou,Zhengji Zhou,Wenhui Zhou,Sixin Wu

DOI: https://doi.org/10.1021/acsami.1c12587

2022-02-02

Abstract:Indium doping of cadmium sulfide (CdS) by chemical bath deposition (CBD) can be an efficient strategy to boost the CIGSSe efficiency. However, limited by the extremely low solubility of In2S3, it is difficult to increase the In doping contents and inhibit the band energy-level regulation for CdS through the traditional CBD process. In this work, we perform a novel CBD method to prepare an indium-doped CdS (In:CdS) buffer, in which the indium source is sequentially slowly added in the growing aqueous solution. In this process, the In ion concentration involved in the real-time deposition is significantly reduced. Thus, compact and uniform In:CdS with higher indium doping content is obtained. Indium doping can elevate the CdS conduction band edge and construct a more favorable spike band alignment with a CIGSSe absorber. Moreover, it introduces efficient carrier transport and reduced interface defect density. As a result, improved CIGSSe heterojunction quality is realized by utilizing In:CdS. Also, the solution-processed CIGSSe device with In:CdS as a buffer yields a high efficiency of 16.4%, with a high VOC of 670 mV and an FF of 75.3%.
Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency

Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt

DOI: https://doi.org/10.48550/arXiv.2202.10708

2022-02-22

Materials Science

Abstract:Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leads to reduced open-circuit voltage because of a negative conduction band offset at the Cu(In,Ga)S2/CdS interface. Reducing this loss necessitates the substitution of CdS by an alternative buffer layer. However, the substitute buffer layer may introduce electrical barriers in the device due to unfavorable band alignment at the other interfaces such as between buffer/ZnO i-layer. This study aims to reduce interface recombinations and eliminate electrical barriers in Cu(In,Ga)S2 solar cells using a combination of Zn1-xMgxO and Al-doped Zn1-xMgxO buffer and i-layer combination deposited using atomic layer deposition and magnetron sputtering, respectively. The devices prepared with these layers are characterized by current-voltage and photoluminescence measurements. Numerical simulations are performed to comprehend the influence of electrical barriers on the device characteristics. An optimal composition of Zn1 xMgxO x = 0.27 is identified for a suitable conduction band alignment with Cu(In,Ga)S2 with a bandgap of ~1.6 eV, suppressing interface recombination and avoiding barriers. Optimized buffer composition together with a suitable i-layer led to a device with 14 % efficiency and an open-circuit voltage of 943 mV. A comparison of optoelectronic measurements for devices prepared with ZnO and Al:(Zn,Mg)O shows the necessity to replace the ZnO i-layer with Al:(Zn,Mg)O i-layer for a high-efficiency device.
Thin oxide buffer layers for avoiding leaks in CIGS solar cells; a theoretical analysis

Fatemeh Ghamsari-Yazdel,Iman Gharibshahian,Samaneh Sharbati

DOI: https://doi.org/10.1007/s10854-021-05476-7

2021-02-22

Abstract:The purpose of this research is the performance improvement of the CIGS/CdS/ZnO solar cells, while the CdS buffer layer is too thin. Enhancement of photocurrent by decreasing the thickness of CdS buffer layer is expected from a reduced parasitic absorption at short wavelengths. However, the formation of pinholes due to the too-thin CdS buffer layer and a non-uniform coverage of the CIGS surface degrades the solar cell performance by reducing fill factor (FF) and open-circuit voltage (Voc). This degradation is because the direct contact of ZnO and CIGS could exist in pinholes, and the formation of the cliff-like band alignment at CIGS/ZnO interface increases the recombination rate. In this work, to eliminate this destructive effect in the CIGS solar cells with a thin CdS layer, ZnO window layer has been replaced by a suitable thin oxide layer as an intermediate buffer layer. By the proposed oxides, the band alignment between the CIGS layer and the adjacent layer is optimized, while pinholes occurred. It is found that the proposed buffer-less CIGS solar cell leading to the efficiency improvement from 17.6% to 18.8%.
Boost the efficiency of Cu2ZnSn(S,Se)4 solar cell by using Mn2+ induced ultra‐thin CdS buffer layer

Haoyu Xu,Haifeng Gao,Yujiao Ma,Qing Zhou,Yuzhou Sun,Chao Gao,Wei Yu

DOI: https://doi.org/10.1002/solr.202200984

IF: 9.1726

2023-01-06

Solar RRL

Abstract:In this paper, the efficiency of CZTSSe solar cell is improved by adding manganese chloride (MnCl2) in the deposition solution of the CdS buffer layer. The mechanisms behind the experimental results are investigated. On one hand, the MnCl2 can facilitate the deposition of ultra‐thin (∽10nm) CdS buffer layer. The decreased thickness of the buffer layer can reduce the parasitic absorption loss of the solar cell. As the result, the short‐circuit current density (J SC ) of the solar cell is increased. On the other hand, the Mn2+ in the deposition solution can diffuse into the CZTSSe layer during the deposition of the buffer layer. The incorporation of Mn in CZTSSe would decrease the acceptor level of CZTSSe, reduce the defects at the CZTSSe/CdS interface and increase the activation energy for the main recombination path in CZTSSe solar cell. These can lead to the reduction of the carrier recombination in the depletion region of the solar cell. As the result, the open‐circuit voltage (V OC ) of CZTSSe solar cell is improved. By using the ultra‐thin CdS buffer layers, the efficiency of CZTSSe solar cell is improved from 10.0% to 12.0% (active area efficiency). This article is protected by copyright. All rights reserved.

energy & fuels,materials science, multidisciplinary
Impact on generation and recombination rate in Cu2ZnSnS4 (CZTS) solar cell for Ag2S and In2Se3 buffer layers with CuSbS2 back surface field layer

Pratibha Chauhan,Surbhi Agarwal,Vaibhava Srivastava,Sadanand Maurya,M. Khalid Hossain,Jaya Madan,Rajesh Kumar Yadav,Pooja Lohia,Dilip Kumar Dwivedi,Asma A. Alothman

DOI: https://doi.org/10.1002/pip.3743

2023-10-06

Progress in Photovoltaics Research and Applications

Abstract:Here, Kesterite solar cells are designed and simulated where CuSbS2 as BSF, and Ag2S and In2Se3 as buffer layers are used. With In2Se3, Jsc of 30.274 mA/cm2, FF of 89.15%, PCE of 31.67%, and Voc of 1.173 V. With the Ag2S buffer layer, PCE is 31.02%, FF is 88.61%, Jsc is 30.245 mA/cm2, and Voc is 1.157 V. Results show improved performance compared with conventional structures. For photovoltaic (PV) applications, the earth‐abundant and non‐hazardous Kesterite Cu2ZnSnS4 (CZTS) is a possible substitute for chalcopyrite copper indium gallium selenide (CIGS). This research offers insight into the most innovative method for improving the performance of Kesterite solar cells (SCs) by using CuSbS2 back surface field (BSF) and Ag2S and In2Se3 as buffer layers, focuses on aligning energy bands, reducing non‐radiative recombination, and improving open‐circuit voltage (Voc). The proposed cells are Ni/CuSbS2/CZTS/In2Se3/ITO/Al and Ni/CuSbS2/CZTS/Ag2S/ITO/Al by adding interfaces. The optimized CZTS SCs with In2Se3 achieve a short‐circuit current density (Jsc) of 30.274 mA/cm2, fill factor (FF) of 89.15%, power conversion efficiency (PCE) of 31.67%, and Voc of 1.173 V. With the Ag2S buffer layer, PCE is 31.02%, FF is 88.61%, Jsc is 30.245 mA/cm2, and Voc is 1.157 V. These results depict the potential of CZTS‐based SCs with improved performance compared with conventional structures.

materials science, multidisciplinary,physics, applied,energy & fuels
Efficiency Enhancement of CIGS Solar Cells via Recombination Passivation

Hui Li,Jingwei Chen,Yi Zhang,Wenjing Wang,Hongwei Gu

DOI: https://doi.org/10.1021/acsaem.0c01930

IF: 6.4

2020-09-04

ACS Applied Energy Materials

Abstract:Cu(In,Ga)Se2 (CIGS) solar cells attract intense interest both in research and industry fields due to their high power conversion efficiencies, low costs, and high stabilities. The power conversion efficiency of a CIGS solar cell is limited by the deep level defects distributed on the surface and in the bulk of the CIGS solar cells. In this work, we elucidate that the deep level defects are significantly suppressed during the CdS buffer layer deposition process via a chemical bath deposition (CBD) method. The X-ray photoelectron spectroscopy results show the incorporation of cadmium (Cd) into CIGS during the CdS deposition process, which is the main reason for the reduced deep level nonradiative recombination defects. Raman spectroscopy and secondary ion mass spectroscopy further reveal the reduction of nonradiative recombination deep level defects due to Cd incorporation. Besides, the high-resistivity i-ZnO layer provides field-effect passivation, leading to the enhancement of the power conversion efficiency from 11.0 to 12.1%. By a combination of the incorporation of Cd, i-ZnO passivation, and optimization of the band gap of CIGS, the champion power conversion efficiency of the CIGS solar cell is as high as 15.5% without an antireflective layer and alkali metal postdeposition treatment. Our results provide insights into the effect of the CdS buffer layer, CBD method, and high-resistivity i-ZnO layer on the performance of CIGS solar cells, which is quite helpful to further improve the power conversion efficiency of CIGS solar cells.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.0c01930?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.0c01930</a>.CIGS coevaporation deposition process; CdS CBD deposition; characterizations; top-view SEM images of CdS deposited via chemical bath deposition for different times; XRD pattern of CdS fabricated via a CBD method at 80 °C for 12 min; parameters for the simulations of the performance of CIGS solar cells with different thicknesses of i-ZnO; and EQE curves of CIGS solar cell obtained at 0, 0.5, −0.5, and 1 V DC voltage bias (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.0c01930/suppl_file/ae0c01930_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,energy & fuels
CdTe thin film solar cells with a SnTe buffer layer in back contact

Zeping Weng,Songsong Ma,He Zhu,Zhenyu Ye,Tianyu Shu,Jie Zhou,Xuanzhi Wu,Huizhen Wu

DOI: https://doi.org/10.1016/j.solmat.2017.12.018

IF: 6.9

2018-01-01

Solar Energy Materials and Solar Cells

Abstract:In recent years CdTe thin film solar cells (SCs) have demonstrated promising market application foreground. However, a relatively large gap between the achieved SCs efficiencies and the theoretically predicted maximum efficiency still exists. In particular, the open circuit voltage (Voc) of the CdTe thin film SCs could be further increased, which is limited by high-work-function of CdTe. In this work, p-type narrow-gap SnTe thin films are proposed as a buffer layer in the back contact of CdTe SCs. The band alignment at SnTe/CdTe interface renders a small valance band offset, which expedites hole transport from the CdTe absorber to the hole electrode and improves the Ohmic contact for CdTe. With the insertion of a SnTe single buffer layer at the back contact, a Cu-free CdTe SC has been developed, which displays the same cell efficiency as the traditional cells using CuxTe as the back contact. The Voc of cells with ZnTe: Cu/SnTe double-layer at back contact is notably higher than the CdTe SCs fabricated with CuxTe or ZnTe: Cu single-layer at the back contact. Furthermore, accretion of hole concentration is also demonstrated by the diffusion of Sn in the CdTe absorber layer. This work shows the potential to improve CdTe SCs by using a narrow-gap IV-VI compound semiconductor.

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CdTe thin film solar cells with a SnTe buffer layer in back contact