Abstract:Graphene is one of the most promising spintronic materials due to its high carrier mobility. However, the absence of a band gap and ferromagnetic order in graphene seriously limit its applications in spintronics. How to utilize its high carrier mobility as well as mediate its electronic structure remains a challenge. Herein, we design a novel composite, which is composed of graphene and Mn-doped monolayer MoS2. The magnetic properties and electronic structures of graphene/Mn-doped monolayer MoS2 heterostructures were studied by using density functional theory (DFT) with the van der Waals (vdW) correlations (DFT-D). We found that the heterostructures show increased magnetic moments and more stable ferromagnetic (FM) states compared with that of isolated Mn-doped MoS2 monolayer. Our further studies show that many electrons are transferred to Mn-doped MoS2 monolayer from graphene, which causes the Fermi level to shift down below the Dirac cone about 0.59 eV. The transfered electrons also enhance the FM coupling between Mn ions. Graphene is partially spin polarized because of the magnetic proximity effect, which leads to the spin-dependent gaps for spin-up (16.1 meV) and spin-down (5 meV) at Dirac point, respectively. The introduction of sulfur (S) vacancy to the interface results in a much more stable FM structure and a higher total magnetic moment of the FM state; furthermore, it raises the spin polarization of graphene π orbitals and opens up a small band gap of about 7 meV. These findings propose a new route to facilitate the design of spintronic devices which both need stable ferromagnetism and finite band gap.

Spin-Polarized Semiconducting Band Structure of Monolayer Graphene on Ni(111)

Spin and Band Ferromagnetism in Trilayer Graphene

Spin Polarization Study of Graphene on the Ni(111) Surface by Density Functional Theory Calculations with a Semiempirical Long-Range Dispersion Correction

Realization of room-temperature ferromagnetic semiconducting state in graphene monolayer

Spin Polarization of Single-Layer Graphene Epitaxially Grown on Ni(111) Thin Film

Spintronic Properties of Graphene Films Grown on Ni(111) Substrate

Tunable induced magnetic moment and in-plane conductance of graphene in Ni/graphene/Ni nano-spin-valve-like structure: A first principles study

Spin-Dependent ππ^{*} Gap in Graphene on a Magnetic Substrate

Spin-dependent $π$$π^{\ast}$ gap in graphene on a magnetic substrate

Asymmetric Spin Gap Opening of Graphene on Cubic Boron Nitride (111) Substrate

Nitrogen-induced Local Spin Polarization in Graphene on Cobalt

Magnetic Proximity Effect in Graphene Coupled to A Bifeo3 Nanoplate

Graphene-mediated ferromagnetic coupling in the nickel nano-islands/graphene hybrid

Enhanced Magnetic Properties and Tunable Dirac Point of Graphene/mn-Doped Monolayer MoS2 Heterostructures

First-principles study of the structural and magnetic properties of graphene on a Fe/Ni(1 1 1) surface

Half-Metallic Yn2 Monolayer: Dual Spin Filtering, Dual Spin Diode and Spin Seebeck Effects

Inducing Single Spin‐polarized Flat Bands in Monolayer Graphene

Spin-resolved imaging of atomic-scale helimagnetism in monolayer NiI2

Spin-polarized Semiconductors: Tuning the Electronic Structure of Graphene by Introducing a Regular Pattern of Sp3 Carbons on the Graphene Plane.

Opposite Changes in Gap Width of Opposite Spin States Induced by Rashba Effect in Anti-ferromagnetic Graphene on Ni(111)

Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition