Abstract:The review is focused on our recent predictions of nontrivial physical phenomena taking place in the nanostructure single-layer grapheme on ferroelectric substrate, which are related with magnetic field. In particular we predicted that 180-degree domain walls in a strained ferroelectric film can induce p-n junctions in a graphene channel and lead to the unusual temperature and gate voltage dependences of the perpendicular modes {\nu} of the integer quantum Hall effect. The non-integer numbers and their irregular sequence principally differ from the conventional sequence {\nu}= 3/2, 5/3. The unusual v-numbers originate from significantly different numbers of the edge modes, {\nu}1 and {\nu}2, corresponding to different concentration of carriers in the left (n1) and right (n2) ferroelectric domains of p-n junction boundary. The difference between n1 and n2 disappears with the vanishing of the film spontaneous polarization in a paraelectric phase, which can be varied in a wide temperature range by an appropriate choice of misfit strain originated from the film-substrate lattice mismatch. Next we studied the electric conductivity of the system ferromagnetic dielectric - graphene channel - ferroelectric substrate. The magnetic dielectric locally transforms the band spectrum of graphene by inducing an energy gap in it and making it spin-asymmetric with respect to the free electrons. It was demonstrated, that if the Fermi level in the graphene channel belongs to energy intervals, where the graphene band spectrum, modified by EuO, becomes sharply spin-asymmetric, such a device can be an ideal non-volatile spin filter. The practical application of the system under consideration would be restricted by a Curie temperature of a ferromagnet. Controlling of the Fermi level (e.g. by temperature that changes ferroelectric polarization) can convert a spin filter to a spin valve.

Spin-dependent $π$$π^{\ast}$ gap in graphene on a magnetic substrate

Spin-Dependent ππ^{*} Gap in Graphene on a Magnetic Substrate

Spin-Dependent Fano Resonance in an Impurity-Doped Graphene Coupled to Ferromagnetic Leads

Spin-Polarized Semiconducting Band Structure of Monolayer Graphene on Ni(111)

Spin-Dependent Transport Through A Quantum Wire on A Graphene Surface

Asymmetric Spin Gap Opening of Graphene on Cubic Boron Nitride (111) Substrate

Spin Polarization Study of Graphene on the Ni(111) Surface by Density Functional Theory Calculations with a Semiempirical Long-Range Dispersion Correction

Inducing Single Spin‐polarized Flat Bands in Monolayer Graphene

Spin Polarization of Single-Layer Graphene Epitaxially Grown on Ni(111) Thin Film

Electronic and magnetic properties of the graphene/Eu/Ni(111) hybrid system

Spintronic Properties of Graphene Films Grown on Ni(111) Substrate

Proximity Effects Induced in Graphene by Magnetic Insulators: First-Principles Calculations on Spin Filtering and Exchange-Splitting Gaps.

Asymmetric Modulation on Exchange Field in a Graphene/BiFeO3 Heterostructure by External Magnetic Field.

Opposite Changes in Gap Width of Opposite Spin States Induced by Rashba Effect in Anti-ferromagnetic Graphene on Ni(111)

Spin-helical Dirac states in graphene induced by polar-substrate surfaces with giant spin-orbit interaction: a new platform for spintronics

Tunable induced magnetic moment and in-plane conductance of graphene in Ni/graphene/Ni nano-spin-valve-like structure: A first principles study

Detecting the spin-polarization of edge states in graphene nanoribbons

Electric Field Induced Spin Polarization In Graphene Nanodots

Spin–orbit Splitting in Graphene on Metallic Substrates

Nontrivial magnetic field related phenomena in the single-layer graphene on ferroelectric substrate

Almost Perfect Spin Filtering in Graphene-Based Magnetic Tunnel Junctions