Abstract:Graphene is a promising candidate for application in spintronic devices and quantum computation. Herein, it is demonstrated that Co grafted graphene shows robust room temperature ferromagnetism via Co dxz and graphene pz orbital hybridization. It is also identified that the origin behind the magnetic interaction of Co‐C ions is mediated by spin polarized graphene pz orbitals, and the room temperature ferromagnetism can be stabilized by electron doping. Graphene‐based magnetic materials exhibit novel properties and promising applications in the development of next‐generation spintronic devices. Modern synthesis techniques have paved the way to design precisely the local environments of metal atoms anchored onto a nitrogen‐doped graphene matrix. Herein, it is demonstrated that grafting cobalt (Co) into the graphene lattice induces robust and stable room‐temperature ferromagnetism. These comprehensive experiments and first‐principles calculations unambiguously identify that the mechanism for this unusual ferromagnetism is π‐d orbital hybridization between Co dxz and graphene pz orbitals. Here, it is found that the magnetic interactions of Co–carbon ions are mediated by the spin‐polarized graphene pz orbitals, and room temperature ferromagnetism can be stabilized by electron doping. It is also found that the electronic structure near the Fermi level, which sets the nature of spin polarization of graphene pz bands, strongly depends on the local environment of the Co moiety. This is the crucial, previously missing, ingredient that enables control of the magnetism. Overall, these observations unambiguously reveal that engineering the atomic structure of metal‐embedded graphene lattices through careful d to p orbital interactions opens a new window of opportunities for developing graphene‐based spintronics devices.

Realization of room-temperature ferromagnetic semiconducting state in graphene monolayer

Spin-Polarized Semiconducting Band Structure of Monolayer Graphene on Ni(111)

Room-temperature Ferromagnetism of Graphene.

A Room-Temperature Spin-Valve with van der Waals Ferromagnet Fe5 GeTe2 /Graphene Heterostructure

Embedding atomic cobalt into graphene lattices to activate room-temperature ferromagnetism

Realization of Robust and Ambient-Stable Room-Temperature Ferromagnetism in Wide Bandgap Semiconductor 2D Carbon Nitride Sheets.

Room‐Temperature Ferromagnetism and Fermi Level Pinning in Multilayer Graphene Films Derived from Ferrocene

Room temperature ferromagnetic semiconductors through metal-semiconductor transition in monolayer MnSe2

Robust magnetic proximity induced anomalous Hall effect in a room temperature van der Waals ferromagnetic semiconductor based 2D heterostructure

Ultrathin Ferrite Nanosheets for Room-Temperature Two-Dimensional Magnetic Semiconductors.

Graphene-mediated ferromagnetic coupling in the nickel nano-islands/graphene hybrid

Potential-tuned magnetic switches and half-metallicity transition in zigzag graphene nanoribbons

Robust Room Temperature Ferromagnetism In Cobalt Doped Graphene by Precision Control of Metal Ion Hybridization

Anomalous Hall effect in graphene coupled to a layered magnetic semiconductor

Van der Waals Magnet based Spin-Valve Devices at Room Temperature

Ferroelectricity in hBN intercalated double-layer graphene

Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant

Functionalized graphene for high-performance two-dimensional spintronics devices.

Two-Dimensional Room Temperature Ferromagnetic Semiconductors with Quantum Anomalous Hall Effect

Enabling room temperature ferromagnetism in monolayer MoS2 via in situ iron-doping

Room-temperature ferromagnetism and piezoelectricity in metal-free 2D semiconductor crystalline carbon nitride