Abstract:Room-temperature ferromagnetic semiconductor is vital in nonvolatile digital circuits and it can provide an idea system where we can make use of both charge and spin of electrons. However, seeking room-temperature ferromagnetic semiconductors is still just an appealing idea that has never been realized in practice up to now. Here we demonstrate that graphene monolayer, hybridized with underlying Ni(111) substrate, is the room-temperature ferromagnetic semiconductor that has been continuously searched for decades. Our spin-polarized scanning tunnelling microscopy (STM) experiments, complemented by first-principles calculations, demonstrate explicitly that the interaction between graphene and the Ni substrate generates a large gap in graphene and simultaneously leads to a relatively shift between majority- and minority-spin bands. Consequently, the graphene sheet on the Ni substrate exhibits a spin-polarized gap with energy of several tens meV even at room-temperature. This result makes the science and applications of room-temperature ferromagnetic semiconductors achievable and raises hopes of graphene-based novel information technologies.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to achieve the ferromagnetic semiconductor state at room temperature. Specifically, the research team hopes to verify through experiments and theoretical calculations whether the interaction of a single - layer graphene on a Ni(111) substrate can produce room - temperature ferromagnetic semiconductor characteristics. ### Background and Problems 1. **Importance of Room - Temperature Ferromagnetic Semiconductors** - Room - temperature ferromagnetic semiconductors are of great significance in non - volatile digital circuits and can utilize both the charge and spin characteristics of electrons. - However, for a long time, scientists have been looking for semiconductor materials that can exhibit ferromagnetism at room temperature, but this has not been achieved yet. 2. **Limitations of Existing Methods** - A direct method is to synthesize ferromagnetic semiconductor materials with a high Curie temperature ($T_C$), such as EuO, but its Curie temperature is only about 69 K and it is unstable in air. - Another method is to introduce a high concentration of magnetic ions into non - magnetic semiconductors, but current technological limitations keep the highest Curie temperature still below 200 K. 3. **Proposal of a New Method** - This paper proposes a new strategy: by combining a single - layer graphene with a Ni(111) substrate, only drive the system surface into the room - temperature ferromagnetic semiconductor state. - This method aims to overcome the limitations of previous methods and achieve a breakthrough in room - temperature ferromagnetic semiconductors. ### Experimental and Theoretical Results 1. **Experimental Results** - Through spin - polarized scanning tunneling microscopy (STM) experiments, researchers observed that a single - layer graphene on a Ni(111) substrate exhibits obvious energy - gap characteristics, which can be detected even at room temperature. - Measurement results show that there is an energy gap of about 40 meV in a single - layer graphene on a Ni(111) substrate, and there is a relative displacement between the spin - up and spin - down bands. 2. **Theoretical Calculations** - First - principles calculations show that the strong chemical interaction between graphene and the Ni substrate not only opens a large energy gap (about 300 meV) but also breaks the degeneracy of the majority - spin and minority - spin bands. - The calculation results further confirm the existence of the spin - polarized energy gap observed in the experiment and explain the origin of the room - temperature ferromagnetic semiconductor characteristics. ### Conclusion This research has successfully proven that a single - layer graphene on a Ni(111) substrate can achieve room - temperature ferromagnetic semiconductor characteristics, which offers hope for future graphene - based new information technologies. This finding not only solves the long - standing scientific problem but also brings new possibilities for developing a new generation of data processing and storage technologies based on spintronics. \[ E_{gap}\approx40 \text{ meV} \] \[ E_{\sigma\uparrow}\approx300 \text{ meV}, \quad E_{\sigma\downarrow}\approx300 \text{ meV} \] These formulas show the energy - gap characteristics exhibited by a single - layer graphene on a Ni(111) substrate.

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