Robust magnetic proximity induced anomalous Hall effect in a room temperature van der Waals ferromagnetic semiconductor based 2D heterostructure

Hao Wu,Li Yang,Gaojie Zhang,Wen Jin,Bichen Xiao,Wenfeng Zhang,Haixin Chang
DOI: https://doi.org/10.1002/smtd.202301524
2023-11-13
Abstract:Developing novel high-temperature van der Waals ferromagnetic semiconductor materials and investigating their interface coupling effects with two-dimensional topological semimetals are pivotal for advancing next-generation spintronic and quantum devices. However, most van der Waals ferromagnetic semiconductors exhibit ferromagnetism only at low temperatures, limiting the proximity research on their interfaces with topological semimetals. Here, we report an intrinsic, van der Waals layered room-temperature ferromagnetic semiconductor crystal, FeCr0.5Ga1.5Se4 (FCGS), with a Curie temperature as high as 370 K, setting a new record for van der Waals ferromagnetic semiconductors. The saturation magnetization at low temperature (2 K) and room temperature (300 K) reaches 8.2 emu/g and 2.7 emu/g, respectively. Furthermore, FCGS possesses a bandgap of approximately 1.2 eV, which is comparable to the widely used commercial silicon. The FCGS/graphene heterostructure exhibits an impeccably smooth and gapless interface, thereby inducing a robust magnetic proximity coupling effect between FCGS and graphene. After the proximity coupling, graphene undergoes a charge carrier transition from electrons to holes, accompanied by a transition from non-magnetic to ferromagnetic transport behavior with robust anomalous Hall effect. Notably, the anomalous Hall effect remains robust even temperatures up to 400 K.
Materials Science
What problem does this paper attempt to address?
The main problem that this paper attempts to solve is to develop a new type of high - temperature van der Waals ferromagnetic semiconductor material and study its interface coupling effect with two - dimensional topological semimetals, in order to promote the development of next - generation spintronics and quantum devices. Specifically, the paper reports a room - temperature ferromagnetic semiconductor crystal FeCr₀.₅Ga₁.₅Se₄ (FCGS), whose Curie temperature is as high as 370 K, breaking the record of van der Waals ferromagnetic semiconductors. In addition, FCGS has a bandgap of about 1.2 eV, close to the widely - used commercial silicon material. By combining FCGS with graphene to form a heterostructure, the magnetic proximity coupling effect of graphene at room temperature is achieved, making graphene change from non - magnetic to ferromagnetic transport behavior and showing a robust anomalous Hall effect, which can still remain stable even at a high temperature of 400 K. ### Main research contents: 1. **Material properties**: - **Structure and phase characterization**: Through techniques such as X - ray diffraction (XRD), high - resolution transmission electron microscopy (HRTEM), and selected - area electron diffraction (SAED), the van der Waals layered structure of FCGS and its high - quality single - crystal characteristics are confirmed. - **Semiconductor properties**: Through methods such as ultraviolet - visible - near - infrared absorption spectroscopy (UV - Vis - NIR), photoluminescence (PL) spectroscopy, and photocurrent measurement, the semiconductor properties of FCGS are verified, and its bandgap is about 1.2 eV. - **Room - temperature ferromagnetism**: Through magnetic tests such as zero - field - cooling (ZFC) and field - cooling (FC) curves and magnetization curves (M - H), the ferromagnetism of FCGS at room temperature is proved, and its Curie temperature is as high as 370 K. 2. **Interface coupling effect**: - **Van der Waals interface**: Using techniques such as high - angle annular dark - field scanning transmission electron microscopy (HAADF - STEM), the van der Waals contact interface between FCGS and graphene is studied, and it is confirmed that a good contact interface is formed between them. - **Magnetic proximity effect**: Through Hall effect measurement, it is observed that after FCGS is combined with graphene, the carrier type of graphene changes from electrons to holes, and it changes from non - magnetic to ferromagnetic transport behavior, showing a robust anomalous Hall effect, and can still remain stable even at a high temperature of 400 K. ### Significance: This research not only develops a new type of room - temperature ferromagnetic semiconductor material, but also provides a new platform for studying quantum phenomena such as the quantum anomalous Hall effect, and is expected to promote the development of spintronics and quantum devices.