Abstract:Anisotropic pattern transfer with low damage in compound semiconductor dry etching requires an in depth understanding of the chemical processes that occur at the plasma/semiconductor interface that promote the removal of volatile product species. In situ mass spectrometry has been used to study product evolution during high density plasma etching of GaAs in a Cl2/Ar chemistry. Through definitive surface temperature control and configuration of the mass spectrometer to sample through the substrate platen, a comprehensive picture of the etch process was obtained. Evolution of etch products of GaAs (AsClx and GaClx) was monitored as neutral flux (pressure), ion flux (microwave power) and ion energy (substrate bias) are varied to identify conditions where ion-driven surface chemistry is dominant. Observations show that fluxes of atomic chlorine neutrals and ions are required at the substrate to maximize etch product formation. These conditions are optimally met at low microwave powers (⩽300 W) and pressures (⩽1.0 mTorr) in our system. The ion energy dependence of product formation shows regions of thermal/chemical etching for energies less than 50 eV, ion-assisted chemical etching for energies between 50 and 200 eV, and sputtering for energies greater than 200 eV. Ideal processing conditions are ascertained from the trade off between maximum ion-assisted etch rate and minimal electronic damage, as measured by photoreflectance spectrometry. The effectiveness of post-etch chlorine treatments on returning of the surface Fermi level to its pre-etched value was also investigated.

Enhancement Effect of Translational Energy on Laser Induced Gas-Surface Etching Reactions

Effect of translational energy on laser-assisted reaction of GaAs with chlorine

Angle-Resolved Time-Of-Flight Studies of Laser-Assisted Chemical Etching Reactions

Effect of Temperature on the Emission Properties of Quasi 2D Glass-Like Carbon Placed on Silicon and Silicon Dioxide Substrates

A KINETIC-STUDY OF CHEMICAL ETCHING OF GAAS(100) SURFACE USING ANGLE-RESOLVED TOF METHOD

Molecular-Beam Studies On The Laser-Enhanced Surface-Reaction Of Gaas(100) With Chlorine

Molecular-Beam Study of Laser-Induced Chemical Etching of Si(111) by Chlorine Molecules

KINETICS OF LASER-INDUCED REACTION OF GE(111) WITH CL-2 UNDER LASER IRRADIATION AT 1064 NM

Laser-enhanced Gas Surface Reaction of Chlorine with Aluminum Polycrystalline Surface

Laser-Induced Reactions of Semiconductor Surfaces

Molecular-Beam Studies on the Laser-Enhanced Reaction of Chlorine with A Copper Surface at 1064 Nm

SUPERSONIC MOLECULAR BEAM STUDIES ON THE DYNAMICS OF LASER-INDUCED Cl-2-Ta SURFACE-REACTIONS

Laser Induced Gas-Surface Reaction Of Cl-2 Supersonic Molecular Beam With A Nickel Surface

Molecular beam studies of a gas-surface reaction: dynamics of laser-induced chemical etching of silicon (111) by chlorine

DYNAMICS OF LASER-INDUCED REACTIONS OF CL2 MOLECULAR-BEAM WITH A TITANIUM SURFACE

Angular Distribution Studies on the Reactive Scattering of Cl-2 Molecular Beam with Inp(100) Surface

Laser-Induced Desorption and Photofragmentation of Small Molecules Adsorbed on Surfaces

Near IR laser-induced chemical etching on the InP (100) surface

An angle-resolved TOF study on the UV laser-induced etching of InP(100) surface with chlorine

Surface chemistry and damage in the high density plasma etching of gallium arsenide

State-selective enhanced production of positive ions and excited neutral fragments of gaseous CH2Cl2 following Cl 2p core-level photoexcitation