Abstract:In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the photoluminescence measurements reveals a power coefficient of P~I0.74, indicating that defects related process is playing an important role in the predominant recombination channel for photogenerated carriers. At 70 K, the device exhibits a dark current density of 2.3 A/cm2 under -0.1 V bias. Arrhenius analysis of dark current shows activation energies much less than half of the active layer bandgap, which suggests that the device is mainly limited by surface leakage and defect-assisted tunneling, consistent with the photoluminescence analysis. The detector shows 50% cutoff wavelength at ~5.5 um at 70 K under bias of -0.1 V. The corresponding peak responsivity and specific detectivity are 1.2 A/W and 1.3*10e9 cm*Hz1/2/W, respectively. Based on these optoelectronics characterization results, reduction of defects by optimizing the III/V-Si interface, and suppression of surface leakage channels are argued to be the main factors for performance improvement in this Si-based T2SL detector towards low cost, large-format MWIR detection system on Si photonics platform.

Wide Spectrum Responsivity Detectors from Visible to Mid-Infrared Based on Antimonide

Visible-extended Mid-Infrared Wide Spectrum Detector Based on InAs/GaSb Type-ⅱ Superlattices (T2SL)

Mid-wavelength infrared InAs/GaSb type Ⅱ superlattice detectors

Molecular Beam Epitaxy Growth and Characteristics of the High Quantum Efficiency InAs/GaSb Type-Ii Superlattices MWIR Detector

InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy

Antimonide-Based Visible To Short Wavelength Infrared Bispectral Photodetector

Growth and Fabrication of InAs/GaSb Type II Superlattice Mid-Wavelength Infrared Photodetectors

Demonstration of Si Based InAs/GaSb Type-Ii Superlattice P-I-n Photodetector

Pbn Type Short-Wavelength Infrared Photodetector with an Ultralow Dark Current and Extended Wavelength Based on a Strained InGaAs/GaAsSb Superlattice.

Sulfide Treatment Passivation of Mid-/Long-wave Dual-Color Infrared Detectors Based on Type-Ii InAs/GaSb Superlattices

High Performance InAs/GaAsSb Superlattice Long Wavelength Infrared Photo-Detectors Grown on InAs Substrates

Very Long-Wavelength (~20μm) InAs/GaSb Superlattice Infrared Detector with Double InSb-like Interfaces

Visible to Near-Infrared Light Detectors Based on Au/SnS/Ag Schottky Structure with Ultrahigh Responsivity and Fast Response

Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector with N-B-p Design Grown on GaAs Substrate

Molecular Beam Epitaxy Growth Of High Quality Inas/Gasb Type-Ii Superlattices For Long Wavelength Infrared Detection

InAs/GaSb Type-Ⅱ Superlattices for Infrared Detector

Inas-Based Type-Ii Superlattice Long Wavelength Photodetectors

320 x 256 long wavelength infrared focal plane arrays based on type- II InAs/GaSb superlattice

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

Mid-wavelength high operating temperature barrier infrared detector and focal plane array

Interfacial Characteristics and Optical Properties of InAs/InAsSb Type II Superlattices for the Mid‐Infrared Operation