Abstract:Silicon carbide (SiC) has been widely used in nuclear technology due to its excellent properties. In the irradiation environment, the energetic incident particles can cause the atoms in the material to deviate from the position of the crystal lattice, thereby producing the vacancies, interstitial atoms, anti-site atoms and other point defects. These defects will change the thermal properties of the material and degrade the service performance of the material. Therefore, in this work the equilibrium molecular dynamics method (Green-Kubo method) is used to study the effect of point defects on the heat transfer properties of cubic Si-C (beta-SiC or 3CSiC) with the help of the Tersoff-type potential. The point defects considered include Si interstitial atoms (Si-I), Si vacancies (Si-V), Si anti-site atoms (Si-C), C interstitial atoms (C-I), C vacancies (C-V) and C anti-site atoms (C-Si). It is found that the thermal conductivity (lambda) decreases with the increase of the point defect concentration (c). The excessive thermal resistance (Delta R = R-defect - R-perfect, R = 1/lambda, R-defect is the thermal resistance of the defective material, and R-perfect is the thermal resistivity of the material without defects) has a linear relation with the concentration of point defects in the considered range (0.2% -1.6%), and its slope is the thermal resistivity coefficient. It can be found that the thermal resistivity coefficient of vacancy and interstitial atoms are higher than that of anti-site atoms; the thermal resistivity coefficient of point defects at high temperature is higher than at low temperature; the thermal resistivity coefficient of Si vacancies and Si interstitial atoms are higher than that of C vacancies and C interstitial atoms. These results are helpful in predicting the thermal conductivity of silicon carbide under irradiation and controlling the thermal conductivity of silicon carbide.

Point Defect Effects on the Thermal Conductivity of Β-Sic by Molecular Dynamics Simulations

Molecular dynamics study of effects of point defects on thermal conductivity in cubic silicon carbide

Influence of Point Defects and Multiscale Pores on the Different Phonon Transport Regimes

Molecular Dynamics Simulations on Influence of Defect on Thermal Conductivity of Silicon Nanowires

Thermal conductivity reduction in highly-doped cubic SiC by phonon-defect and phonon-electron scattering

Phonon scattering in doped silicon by molecular dynamics simulation

The Effect of Point Defect on Mechanical Properties of Mosi2

The Role of Point Defects in the Swelling and Elastic Modulus of Irradiated Cubic Silicon Carbide

Phonon-Defect Scattering in Doped Silicon by Molecular Dynamics Simulation

Effect of the point defect of silicon carbide cladding on mechanical properties: a molecular-dynamics study

First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC

Thermal-Properties Of Boron And Borides

Evolution Of Defects And Defect Clusters In Beta-Sic Irradiated At High Temperature

Combined treatment of phonon scattering by electrons and point defects explains the thermal conductivity reduction in highly-doped Si

Thermal expansion and isotopic composition effects on lattice thermal conductivities of crystalline silicon

Tuning the Thermal Conductivity of Silicon Phononic Crystals Via Defect Motifs: Implications for Thermoelectric Devices and Photovoltaics

Evolution of Defects and Defect Clusters in β-SiC Irradiated at High Temperature

The influence of intrinsic point defects on the electronic band structures and swelling behaviors of 4H-SiC

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution

Effects of point defects on oxidation of 3C-SiC

An extended computational approach for point-defect equilibria in semiconductor materials