Abstract:Silicon carbide as a wide bandgap semiconductor is of great research interest for its widespread deployment in a range of electronic and optoelectronic devices, particularly in power electronics. However, defects in silicon carbide crystals are still major concerns that is hampering the development of high-performance devices. X-ray topography, particularly using the synchrotron beam has been instrumental in characterizing and analyzing defect configurations in silicon carbide crystals to optimize crystal growth as well as understand the effect of defects on device performance. In recent years, the use of ray-tracing simulation technique based on the orientation contrast mechanism to simulate contrast of defects observed on actual X-ray topographs has proven to be an effective approach to investigate the nature of crystallographic defects in various semiconductors. This review discusses the principle of ray-tracing simulation and its application and modifications to incorporate the effects of surface relaxation and photoelectric absorption to better simulate different dislocations observed in 4H–SiC as well as 6H–SiC crystals of various orientations. The adaptation to weak beam topography and plane wave topography is also discussed. The application of ray-tracing simulation in dislocation characterization of silicon carbide of different polytypes is systematically reviewed including different types of dislocations observed in both off-axis wafers and axial-sliced samples through synchrotron X-ray topography under various beam conditions, recording geometries and reflections. The result of ray-tracing simulation is further utilized in other studies including the investigation of effective penetration depth of all types of dislocations lying on the basal plane on grazing-incidence X-ray topography.

Structural and Electronic Properties of 90° Dislocations in Silicon Nanorods: A First-Principles Calculation

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Molecular Dynamics Study on the 60° Dislocation in Silicon

Properties of dislocation networks formed by Si wafer direct bonding

Spontaneous Edge-Defect Formation And Defect-Induced Conductance Suppression In Graphene Nanoribbons

Structure and electrical properties of bilayer zigzag silicene nanoribbons depending on stone-wales and applied electric fields by SCC-DFTB method

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Charge induced reconstruction of glide partial dislocations and electronic properties in GaN

Dislocations as natural quantum wires in Diamond

Atomistic Simulations of Dislocation Activity in Si Nanofibers in Al-Si Eutectics

Atomic structure of dislocation kinks in silicon

Direct atomic-scale imaging about the mechanisms of ultralarge bent straining in Si nanowires.

The structural and electronic properties of silicon nanoribbons on Ag(110): A first principles study

Atomic-scale measurement of localized dislocation phonons at Si/Ge interface

Conducting Electrons in Amorphous Si Nanostructures: Coherent Interference and Metal-Insulator Transitions Mediated by Local Structures

Atomistic Simulation of the 60∘ Dislocation Mobility in Silicon Crystal

Influence of Stone-Wales defects on the structural and electronic properties of single-walled silicon nanotubes by SCC-DFTB calculations

Undissociated screw dislocations in silicon: calculations of core structure and energy

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations

Effect of SW defect on structural and transport properties of silicene nanoribbons